25 V-60V 10A Search Results

ZXTN2018F

Abstract: ZXTN2018FTA ZXTP2027F marking 851
Contextual Info: ZXTN2018F 60V, SOT23, NPN medium power transistor Summary V BR CEV > 140V, V(BR)CEO > 60V IC(cont) = 5A RCE(sat) = 25 m⍀ typical VCE(sat) < 45 mV @ 1A PD = 1.2W Complementary part number : ZXTP2027F Description Advanced process capability and package design have been used to

N6040

Contextual Info: DMN6040SK3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max 60V 40mΩ @ V GS = 10V 50mΩ @ V GS = 4.5V ID T C = +25°C 20A 16A Description This new generation MOSFET has been designed to minimize the on- • • • Low Input Capacitance

Contextual Info: DMN6040SFDE 60V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 38mΩ @ VGS = 10V 6.5A 47mΩ @ VGS = 4.5V 5.2A 60V 100% Unclamped Inductive Switch (UIS) test in production

code making 32d

Contextual Info: DMN6040SVT 60V N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits ID RDS(on) max TA = 25°C 44mΩ @ VGS = 10V 5.0A 60mΩ @ VGS = 4.5V 4.3A 60V Description and Applications • • • • 100% Unclamped Inductive Switch (UIS) test in production

Contextual Info: DMT6016LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI ADVANCED INFORMATION Product Summary Features V BR DSS RDS(ON) 60V 16mΩ @ VGS = 10V 24mΩ @ VGS = 4.5V ID TA = +25°C 10.6 A 8.7 A Description This new generation N-Channel Enhancement Mode MOSFET is

code making 32d

Contextual Info: DMN6040SVT 60V N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits ID RDS(on) max TA = 25°C 44mΩ @ VGS = 10V 5.0A 60mΩ @ VGS = 4.5V 4.3A 60V Description and Applications • • • • 100% Unclamped Inductive Switch (UIS) test in production

Contextual Info: DMN6040SSD 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary V BR DSS Features and Benefits • • • • • • ID RDS(on) max TA = +25°C 40mΩ @ VGS = 10V 5.0A 55mΩ @ VGS = 4.5V 4.4A 60V Low Input Capacitance Low On-Resistance

T6016LS

Contextual Info: DMT6016LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT ADVANCEINFORMATION INFORMATION ADVANCED Product Summary Features and Benefits V BR DSS RDS(ON) max 60V 18mΩ @ VGS = 10V 28mΩ @ VGS = 4.5V • • • • • ID max TA = +25°C 9.2 A 7.5 A Low On-Resistance

Contextual Info: DMN6070SSD 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 80mΩ @ VGS = 10V 4.1A 100mΩ @ VGS = 4.5V 3.6A V(BR)DSS NEW PRODUCT ADVANCE INFORMATION Features and Benefits •      60V Low On-Resistance

N6040SD

Abstract: d2 marking N6040 N6040s
Contextual Info: DMN6040SSD 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary V BR DSS Features and Benefits • • • • • • ID RDS(on) max TA = 25°C 40mΩ @ VGS = 10V 5.0A 55mΩ @ VGS = 4.5V 4.4A 60V Low Input Capacitance Low On-Resistance

Contextual Info: DMT6016LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI ADVANCED INFORMATION Product Summary Features V BR DSS RDS(ON) 60V 16mΩ @ VGS = 10V 24mΩ @ VGS = 4.5V ID TA = +25°C 10.6 A 8.7 A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)

Contextual Info: DMT6016LFDF 60V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION NEW PRODUCT Product Summary Features and Benefits V BR DSS RDS(ON) max 60V 16mΩ @ VGS = 10V 27mΩ @ VGS = 4.5V ID max TA = +25°C 8.9A 6.8A Description • 100% Unclamped Inductive Switch (UIS) test in production

T6016LS

Contextual Info: DMT6016LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT ADVANCEINFORMATION INFORMATION ADVANCED Product Summary Features and Benefits V BR DSS RDS(ON) max 60V 18mΩ @ VGS = 10V 28mΩ @ VGS = 4.5V • • • • • ID max TA = +25°C 9.2 A 7.5 A Low On-Resistance

N6040SD

Contextual Info: DMN6040SSD 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary V BR DSS Features and Benefits 60V • • • • • • ID RDS(on) max TA = 25°C 40mΩ @ VGS = 10V 5.0A 55mΩ @ VGS = 4.5V 4.4A Low Input Capacitance Low On-Resistance

Contextual Info: DMN6040SK3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max 60V 40mΩ @ VGS = 10V 50mΩ @ VGS = 4.5V ID TC = +25°C 20A 16A • Low Input Capacitance • Low On-Resistance • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Contextual Info: DMN6040SK3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max 60V 40mΩ @ VGS = 10V 50mΩ @ VGS = 4.5V ID TC = +25°C 20A 16A • Low Input Capacitance • Low On-Resistance • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

PRW5

Abstract: SF10JC6
Contextual Info: SHINDENGEN Schottky Rectifiers SBD SF10JC6 60V 10A Dual OUTLINE DIMENSIONS Case : FTO-220 Unit : mm RATINGS Absolute Maximum Ratings (Tc=25Ž unless otherwise specified) Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature V

Contextual Info: DMN6040SSD 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary ADV AN CE I N FORM AT I ON V BR DSS • • • • • • ID RDS(on) max TA = 25°C 40mΩ @ VGS = 10V 5.0A 55mΩ @ VGS = 4.5V 4.4A 60V Low Input Capacitance Low On-Resistance

Contextual Info: DMN6013LFG 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits V BR DSS RDS(ON) max 60V 13mΩ @ VGS = 10V 18mΩ @ VGS = 4.5V ID max TA = +25°C 10.3A 8.8A • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher

Contextual Info: DMN6040SVT 60V N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits • • • • • • ID RDS(on) max TA = 25°C 44mΩ @ VGS = 10V 5.0A 60mΩ @ VGS = 4.5V 4.3A 60V Low Input Capacitance Low On-Resistance Fast Switching Speed Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)

Contextual Info: DMN6040SFDE 60V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary V BR DSS 60V Features ID max TA = +25°C RDS(ON) max Package 38mΩ @ VGS = 10V U-DFN2020-6 Type E 47mΩ @ VGS = 4.5V 6.5A 5.2A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMN6040SFDE 60V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary ID max TA = +25°C RDS ON max Package 38mΩ @ VGS = 10V U-DFN2020-6 Type E V(BR)DSS 60V Features and Benefits 47mΩ @ VGS = 4.5V 6.5A 5.2A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

marking n8

Contextual Info: DMN6040SFDE 60V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary ID max TA = +25°C RDS ON max Package 38mΩ @ VGS = 10V U-DFN2020-6 Type E V(BR)DSS 60V Features and Benefits 47mΩ @ VGS = 4.5V 6.5A 5.2A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMN6040SFDE 60V N-CHANNEL ENHANCEMENT MODE MOSFET Features ADV AN CE I N FORM AT I ON Product Summary V BR DSS 60V ID max TA = +25°C RDS(ON) max Package 38mΩ @ VGS = 10V U-DFN2020-6 Type E 47mΩ @ VGS = 4.5V 6.5A 5.2A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching