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    25 KHZ Search Results

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    Abracon Corporation AB26T-81.925KHZ

    XTAL 2 X 6 CYLINDRICAL CAN 0.081
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    DigiKey AB26T-81.925KHZ Bulk 1,000
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    Avnet Americas AB26T-81.925KHZ Bulk 16 Weeks 1,000
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    Apacer Technology Inc B72.225KHZ.00175

    M242 NVME 3X2 BICS5 480GB WT
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    DigiKey B72.225KHZ.00175 Bulk
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    Apacer Technology Inc B72.225KHZ.00158

    SSD 480GB M.2 TLC NVME PCIE 3.3V
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    Abracon Corporation AB26TRB-81.925KHZ-T

    - Tape and Reel (Alt: AB26TRB-81.925KHZ-T)
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    Avnet Americas AB26TRB-81.925KHZ-T Reel 2,000
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    Abracon Corporation ABS25-32.768KHZ-T

    Crystals 32.768 KHZ 12.5PF +/-20PPM
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    Mouser Electronics ABS25-32.768KHZ-T 177,313
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    Find more 25 KHZ price and stock on Findchips.com

    25 KHZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Philips Components Material grade specification 3S3 3S3 SPECIFICATIONS SYMBOL µi B Z 1 ρ TC density CONDITIONS 25 °C; ≤10 kHz; 0.1 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 25 °C; 30 MHz; 25 °C; 100 MHz; 25 °C; 300 MHz; DC; 25 °C


    Original     		MBW196 MBW192 100oC MBW198 MBW219 PDF

    4c6 philips

    Abstract: t25 4C6 4C6 SPECIFICATIONS material 4c6 Philips 4C6 MBW006
    Contextual Info: Philips Components Material grade specification 4C6 4C6 SPECIFICATIONS SYMBOL CONDITIONS 25 °C; ≤10 kHz; 0.1 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 25 °C; 3 MHz; 0.1 mT 25 °C; 10 MHz; 0.1 mT 25 °C; 100 kHz; 1.5 to 3 mT 25 °C; 100 kHz;


    Original     		MBW006 MBW008 MBW007 100oC MBW079 4c6 philips t25 4C6 4C6 SPECIFICATIONS material 4c6 Philips 4C6 MBW006 PDF

    transistor 3s4

    Contextual Info: Philips Components Material grade specification 3S4 3S4 SPECIFICATIONS SYMBOL µi B Z 1 ρ TC density CONDITIONS 25 °C; ≤10 kHz; 0.1 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 25 °C; 3 MHz; 25 °C; 30 MHz; 25 °C; 100 MHz; 25 °C; 300 MHz;


    Original     		MBW195 MBW191 MBW199 100oC MBW221 transistor 3s4 PDF

    Contextual Info: Philips Components Material grade specification 3E6 3E6 SPECIFICATIONS CONDITIONS VALUE 1 25 °C; ≤10 kHz; 0.1 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 25 °C; 10 kHz; 0.1 mT 25 °C; 30 kHz; 0.1 mT 25 °C; 10 kHz; 1.5 to 3 mT DC; 25 °C 12000 ±20%


    Original     		MBW264 MBW265 MBW266 MBW267 PDF

    S-21010

    Contextual Info: Philips Components Material grade specification 3E7 3E7 SPECIFICATIONS CONDITIONS VALUE 1 25 °C; ≤10 kHz; 0.1 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 25 °C; 10 kHz; 0.1 mT 25 °C; 30 kHz; 0.1 mT 25 °C; 10 kHz; 1.5 to 3 mT DC; 25 °C 15000 ±20%


    Original     		MBW201 MBW202 MBW203 MBW204 S-21010 PDF

    philips 3b8

    Abstract: MBW283 MBW285 permeability
    Contextual Info: Philips Components Material grade specification 3B8 3B8 SPECIFICATIONS SYMBOL µi B tanδ/µi PV ρ TC density CONDITIONS VALUE 25 °C; ≤10 kHz; 0.1 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 25 °C; 100 kHz; 0.1 mT 25 °C; 25 kHz; 200 mT 25 °C; 100 kHz;


    Original     		MBW283 MBW284 MBW285 MBW288 MBW289 philips 3b8 MBW283 MBW285 permeability PDF

    PN544

    Abstract: TI59 national 2N3859 2N2712 2N915 MPQ2222 MPQ6700 T1890 TN2219 PN101
    Contextual Info: This NPN Transistors NATL @ . VCE SAT VBE(SAT) (V) (V) c Max Min Max v * C0b (PF) Max * ‘ off (ns) Max NF (dB) Max hFE Min Max 5 500 18 75 225 2 4.5 18 5 500 18 75 225 2 4.5 25 25 5 100 25 90 180 2 (1 kHz) 10 10 10 TO-92 (94) 25 25 5 100 25 150 300


    OCR Scan     		T-29-Of T-29-01 PN544 TI59 national 2N3859 2N2712 2N915 MPQ2222 MPQ6700 T1890 TN2219 PN101 PDF

    3C81

    Abstract: philips 3C81
    Contextual Info: Philips Components Material grade specification 3C81 3C81 SPECIFICATIONS SYMBOL µi µa B PV ρ TC density CONDITIONS VALUE 25 °C; ≤10 kHz; 0.1 mT 100 °C; 25 kHz; 200 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 100 °C; 25 kHz; 200 mT DC; 25 °C


    Original     		MBW023 MBW032 100oC MBW016 MBW051 MBW053 3C81 philips 3C81 PDF

    Contextual Info: Philips Components Material grade specification 3S1 3S1 SPECIFICATIONS SYMBOL µi B Z 1 ρ TC density CONDITIONS 25 °C; ≤10 kHz; 0.1 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 25 °C; 1 MHz; 25 °C; 10 MHz; DC; 25 °C VALUE UNIT ≈4000


    Original     		MBW268 MBW269 MBW270 MBW218 PDF

    MBW220

    Abstract: 4s2 material
    Contextual Info: Philips Components Material grade specification 4S2 4S2 SPECIFICATIONS SYMBOL µi B Z 1 ρ TC density CONDITIONS 25 °C; ≤10 kHz; 0.1 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 25 °C; 30 MHz; 25 °C; 300 MHz; DC; 25 °C VALUE UNIT ≈700


    Original     		MBW306 MBW307 MBW308 MBW220 MBW220 4s2 material PDF

    4c65

    Abstract: philips 4c65 MBW074
    Contextual Info: Philips Components Material grade specification 4C65 4C65 SPECIFICATIONS SYMBOL µi B tanδ/µi ρ TC density CONDITIONS 25 °C; ≤10 kHz; 0.1 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 25 °C; 3 MHz; 0.1 mT 25 °C; 10 MHz; 0.1 mT DC; 25 °C VALUE


    Original     		MBW074 MBW076 100oC MBW075 MBW091 MBW080 4c65 philips 4c65 MBW074 PDF

    philips 4b1 material

    Abstract: 4B1 philips
    Contextual Info: Philips Components Material grade specification 4B1 4B1 SPECIFICATIONS SYMBOL µi B tanδ/µi ρ TC density CONDITIONS VALUE 25 °C; ≤10 kHz; 0.1 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 25 °C; 1 MHz; 0.1 mT 25 °C; 3 MHz; 0.1 mT DC; 25 °C


    Original     		MBW290 MBW291 MBW292 philips 4b1 material 4B1 philips PDF

    4A15

    Contextual Info: Philips Components Material grade specification 4A15 4A15 SPECIFICATIONS SYMBOL µi B tanδ/µi ρ TC density CONDITIONS 25 °C; ≤10 kHz; 0.1 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 25 °C; 1 MHz; 0.1 mT 25 °C; 3 MHz; 0.1 mT DC; 25 °C VALUE


    Original     		MBW314 MBW313 MBW312 4A15 PDF

    MBW303

    Contextual Info: Philips Components Material grade specification 4E1 4E1 SPECIFICATIONS SYMBOL µi B tanδ/µi ρ TC density CONDITIONS 25 °C; ≤10 kHz; 0.1 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 25 °C; 10 MHz; 0.1 mT 25 °C; 30 MHz; 0.1 mT DC, 25 °C VALUE


    Original     		MBW303 MBW304 MBW305 MBW303 PDF

    Contextual Info: Philips Components Material grade specification 3C11 3C11 SPECIFICATIONS SYMBOL µi B tanδ/µi ρ TC density CONDITIONS VALUE 25 °C; ≤10 kHz; 0.1 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 25 °C; 100 kHz; 0.1 mT 25 °C; 300 kHz; 0.1 mT DC; 25 °C


    Original     		MBW252 MBW253 MBW254 MBW255 PDF

    4A11

    Contextual Info: Philips Components Material grade specification 4A11 4A11 SPECIFICATIONS SYMBOL µi B tanδ/µi ρ TC density CONDITIONS 25 °C; ≤10 kHz; 0.1 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 25 °C; 1 MHz; 0.1 mT 25 °C; 3 MHz; 0.1 mT DC; 25 °C VALUE


    Original     		MBW309 MBW310 MBW311 4A11 PDF

    Contextual Info: Philips Components Material grade specification 3D3 3D3 SPECIFICATIONS SYMBOL µi B tanδ/µi ηB DF αF ρ TC density CONDITIONS 25 °C; ≤10 kHz; 0.1 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 25 °C; 300 kHz; 0.1 mT 25 °C; 1 MHz; 0.1 mT 25 °C; 100 kHz;


    Original     		MBW003 MBW004 MBW005 100oC MBW078 PDF

    philips 3e4

    Contextual Info: Philips Components Material grade specification 3E4 3E4 SPECIFICATIONS SYMBOL µi B tanδ/µi ηB DF ρ TC density CONDITIONS 25 °C; ≤10 kHz; 0.1 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 25 °C; 100 kHz; 0.1 mT 25 °C; 300 kHz; 0.1 mT 25 °C; 10 kHz;


    Original     		MBW261 MBW260 MBW262 MBW263 philips 3e4 PDF

    CBW243

    Abstract: CBW244 CBW245 CBW246
    Contextual Info: Philips Components Material grade specification 2A3 2A3 SPECIFICATIONS SYMBOL µi B PV HC ρ TC density CONDITIONS 25 °C; ≤10 kHz; 0.1 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 25 °C; 1 MHz; 0.1 mT 25 °C; 3 MHz; 0.1 mT from 800 A/m DC; 25 °C


    Original     		CBW243 CBW245 CBW244 CBW246 CBW243 CBW244 CBW245 CBW246 PDF

    philips 3e5

    Abstract: MBW041 MBW028
    Contextual Info: Philips Components Material grade specification 3E5 3E5 SPECIFICATIONS SYMBOL µi B tanδ/µi ηB ρ TC density CONDITIONS VALUE 25 °C; ≤10 kHz; 0.1 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 25 °C; 30 kHz; 0.1 mT 25 °C; 300 kHz; 0.1 mT 25 °C; 10 kHz;


    Original     		MBW027 MBW028 MBW012 100oC MBW041 MBW081 philips 3e5 MBW041 MBW028 PDF

    philips 3h1

    Abstract: material 3h1 MBW271
    Contextual Info: Philips Components Material grade specification 3H1 3H1 SPECIFICATIONS SYMBOL µi B tanδ/µi ηB DF αF ρ TC density CONDITIONS 25 °C; ≤10 kHz; 0.1 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 25 °C; 10 kHz; 0.1 mT 25 °C; 100 kHz; 0.1 mT 25 °C; 10 kHz;


    Original     		MBW271 MBW272 MBW273 philips 3h1 material 3h1 MBW271 PDF

    Contextual Info: Philips Components Material grade specification 3B7 3B7 SPECIFICATIONS SYMBOL µi B tanδ/µi DF αF ρ TC density CONDITIONS 25 °C; ≤10 kHz; 0.1 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 25 °C; 100 kHz; 0.1 mT 25 °C; 500 kHz; 0.1 mT 25 °C; 1 MHz;


    Original     		MBW057 MBW020 100oC MBW058 MBW077 PDF

    Contextual Info: ELECTRICAL CHARACTERISTICS 15 - 68 pF Peak voltage at +25°C 1.5 x working voltage Dissipation factor, 1 kHz, 1Vrms, +25°C 0.1% MOS Q at 1 mHz, 50 Vrms, +25°C 1000 min. TCC, -55°C to +150°C +45 ±25ppm/°C Insulation resistance at working voltage +25°C


    Original     		MIL-STD-202, 25ppm/ MIL-STD-883 PDF

    3C30

    Contextual Info: Philips Components Material grade specification 3C30 3C30 SPECIFICATIONS SYMBOL CONDITIONS 25 °C; ≤10 kHz; 0.1 mT 100 °C; 25 kHz; 200 mT 100 °C; 10 kHz; 250 A/ m 100 °C; 25 kHz; 200 mT 100 °C; 100 kHz; 100 mT 100 °C; 100 kHz; 200 mT DC; 25 °C µi


    Original     		MBW236 MBW235 MBW237 MBW239 MBW241 3C30 PDF