25 AMP 1200 VOLT DIODE Search Results

5000watt

Contextual Info: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=25 C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

WE VQE 24 E

Abstract: WE VQE 23 F vqe 24 e WE VQE 23 E vqe 14 vqe 13 vqe 14 E VQE 22 VQE 23 E vqe 24 d
Contextual Info: MOTOROLA Order this documenti by MHPM7B25A120B/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module Integrated Power Stage for 5 hp Motor Drives MHPM7B25A120B This device is not recommended for new designs (This device is replaced by MHPM7A25S120DC3) 25 AMP, 1200 VOLT

U10150E

Abstract: rectifier diode 6 amp 400 volt u10150 IR25750 rectifier diode 20 amp 800 volt rectifier diode 20 amp 1200 volt U10120 U1015 U10120E blocking diode 20 amp 1200 volt
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SCANSWITCH MUR10120E Pow er Rectifier For High and Very High Resolution M onitors M otorola Preferred D a v lct This state-of-the-art power rectifier is specifically designed for use a s a dam per diode in horizontal

SCR Inverter

Contextual Info: SENSITRON SEMICONDUCTOR SPM1003 TECHNICAL DATA DATASHEET 5279, Rev. - Three-Phase IGBT BRIDGE BRAKE IGBT + INRUSH SCR DESCRIPTION: • 1200 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE AND BRAKE IGBT.  NEAR HERMETIC PACKAGE.  USE OF LATEST 4TH GENERATION IGBT AND DIODE TO MINIMIZE TOTAL LOSSES.

200 Amp current 1000 volt diode

Contextual Info: 25F R SERIES STANDARD RECOVERY DIODE VRRM = 100-1200V, IF(AV) = 25A ,VF = 1.30 Volt. Symbol A Cathode to Stud Shown (Anode to Stud add Suffix R) K MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Add Prefix"A" for avalanche 400-1200V O Symbol Parameter

IT13500

Abstract: 85HF DIODE 1400 VRRM DO-203AB 200 Amp current 1000 volt diode 1400 volt diode
Contextual Info: 85HF R Series STANDARD RECOVERY DIODE VRRM = 100-1600V, IF(AV) = 85Amp. Symbol A K Cathode to Stud Shown (Anode to Stud add Suffix R) MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Parameter Symbol Repetitive Peak Reverse Voltage VRRM Maximum Average On-State Current

100 Amp current 1000 volt diode

Abstract: 60 amp 600 Volt Diode 70HF 70amp diode Diode 1600V To 220 DO-203AB 100 Amp current 800 volt diode
Contextual Info: 70HF R Series STANDARD RECOVERY DIODE VRRM = 100-1600V, IF(AV) = 70Amp. Symbol A K Cathode to Stud Shown (Anode to Stud add Suffix R) MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Parameter 70HF(R) 70HF(R) -10 -20 Symbol 70HF(R) -40 70HF(R) -60 400

BI400N

Contextual Info: • 22307^2 OOOB^E: bö? ■ THIRD GENERATION IGBT § 1200 VOLT, N-SERIES SINGLE MODULES • 200 - 600 Amp Device Pc VcE(sat PeriGST Max. lc ton toff Volts Amps Watts Volts Amps usee. usee. 1200 1200 1200 1200 1200 1200 1200 1200 200 300 300 300 400 400

Contextual Info: THIRD GENERATION IGBT 1200 VOLT, N-SERIES SINGLE MODULES • 200 - 600 Amp Device Type . V e to ': lc Pc Cont. P tr IG B T Volte Amps W atts 200 1200 1500 1200 300 2100 300 :2100y. 1200 1200 300 ’ 2100 .[fitawi-M 400 3100 1200 400 3100 400 3100 .,.:1200J:, 600

7MB150N-120

Abstract: 7MB140N-120 IGBT 400 amp IGBT 50 amp 1200 volt p607 150 VOLT 12 AMP diode 7MBR15NF120 7mbr25nf120 2MBI75N-120 7MBR10NF120
Contextual Info: • 22 3 fl7T e O O O B ^ b bô? <s ■ THIRD GENERATION IGBT 1200 VOLT, N-SERIES SINGLE MODULES • 200 - 600 Amp Device VCES. Type lc Pc Cont. P er IGBT Volts A m ps 200 1200 1200 300 1200 300 1200 300 1200 400 1200 : 400 400 1200 1200 600 1MBI200N-120 1MBI300N-120

l312f

Abstract: L522F RSF74Y100RM L622F relay d2w B512F-2T L514F 24HV1A100 m505032 cpv240
Contextual Info: Solid State Relays All Dimensions Are in Inches mm Featuring state-of-the-art Surface Mount Technology, these SPST-NO relays deliver proven reliability in the most demanding applications. Output consists of an SCR AC switch and is available in zero-cross and

DO-203AB

Contextual Info: 95PF R Series STANDARD RECOVERY DIODE VRRM = 400-1200V, IF(AV) = 95Amp. Symbol A K Cathode to Stud Shown (Anode to Stud add Suffix R) MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Symbol 95PF(R) -40 95PF(R) -80 Repetitive Peak Reverse Voltage VRRM 400

A30QS400-4

Abstract: A30QS604 A30QS800-4 300 volt 5 ampere transistor 4500a A30QS125-4 A30QS7 A30QS600 datasheet of blown fuse indicator 250 volt to 600 volt fuse
Contextual Info: AMP-TRAP –Form 101 A30QS SEMICONDUCTOR PROTECTION FUSES A30QS Amp-Trap® Semiconductor Protection fuses are intended for the protection of Power Semiconductors such as Diodes, Phase Control SCR’s and other Power Semiconductor devices. The A30QS is recommended for

TRANSISTOR MOTOROLA MAC 223

Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
Contextual Info: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),

Contextual Info: DACO SEMICONDUCTOR CO,LTD. SUPER FAST HIGH POWER DIODE MODULE TYPE 200A Features High Surge Capability Type 1200V Vrrm Isolation Type Package Electrically Isolation base plate 200 Amp Rectifier 1200 Volt HEAVY DIODE Maximum Ratings Operating Temperature: -5 5 C to +175 °C

bridge faston 250

Abstract: diodes bridge 10 Amp KBPC2504PF KBPC10 KBPC10XX KBPC15 KBPC1502PWU KBPC25 KBPC35 KBPC3508MW
Contextual Info: KBPC10XX . . . 40XX Series 10 to 40 Amp SINGLE PHASE SILICON BRIDGE Data Sheet Description Features n BUILT-IN INTEGRAL HEAT SINK n UP TO 400 AMP SURGE OVERLOAD RATING n UL RECOGNITION AVAILABLE n OPTION OF WIRE LEADS OR FASTON TERMINALS Electrical Characteristics @ 25o C.

international rectifier GTO

Abstract: SCR 700v 30a LA50-P L15S1000 SCR 1000V 1000A LA055URD33TTI2250 LA100P DC Fuse 1000V 800A LA70QS80-22F LA60Q15-2
Contextual Info: Special Purpose Fuses Semiconductor Fuses 150 – 1300 VAC • Very Fast Acting • 1 – 6000 Amperes Semiconductor Fuses Littelfuse Semiconductor fuses are very fast acting fuses designed specifically for the protection of diodes, thyristors, triacs, and other

KBPC25

Contextual Info: Data Sheet 10 to 40 Amp SINGLE PHASE SILICON BRIDGE Semiconductor Features • BUILT-IN IN TEG RA L HEAT SIN K ■ UP TO 400 AMP SURGE OVERLOAD RATING ■ U L RECO GN ITIO N A VA ILA BLE ■ OPTION O F W IRE LEA D S OR FASTON TERM IN ALS E le c tric a l C h a ra c te ristic s @ 25*C .

schottky diode marking A7 SOD

Contextual Info: WILLAS FM120-M+ THRU DAN217U FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features SWITCHING DIODE • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

493a2s

Abstract: NTE5844 NTE584 10 AMP 1200V RECTIFIER DIODE NTE5845 NTE5912 NTE5933 NF-2A
Contextual Info: NTE5844 & NTE5845, NTE5912 thru NTE5933 Silicon Power Rectifier Diode 20 Amp, DO4 Description and Features: The NTE5844, NTE5845, and NTE5912 through NTE5933 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.

Contextual Info: GBPC2500~2512 Description GBPC Mechanical Data Features ¬ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ¬ High surge current capability ¬ Ideal for printed circuit boards ¬ Case: Molded plastic body over passivated junctions

NTE5980

Abstract: NTE5906 NTE5907 NTE6005
Contextual Info: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp Features: D D D D High Surge Current Capability High Voltage Available Designed for a Wide Range of Applications Available in Anode–to–Case or Cathode–to–Case Style Ratings and Characteristics:

Contextual Info: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp, DO5 Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Range of Applications D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics:

NTE5980

Abstract: NTE5906 NTE5907 NTE6005 "Power rectifier Diode"
Contextual Info: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp, DO5 Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Range of Applications D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics: