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    24N80P Search Results

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    24N80P Price and Stock

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    Littelfuse Inc IXFH24N80P

    MOSFET N-CH 800V 24A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH24N80P Tube 8 1
    • 1 $13.08
    • 10 $13.08
    • 100 $7.92
    • 1000 $6.53
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    IXYS Corporation IXFT24N80P

    MOSFET N-CH 800V 24A TO268
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    DigiKey IXFT24N80P Tube 300
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    TTI IXFT24N80P Tube 300
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    • 1000 $7.44
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    TME IXFT24N80P 1
    • 1 $14.23
    • 10 $11.29
    • 100 $10.15
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    IXYS Corporation IXFK24N80P

    MOSFET N-CH 800V 24A TO264AA
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    DigiKey IXFK24N80P Tube 300
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    Mouser Electronics IXFK24N80P
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    TTI IXFK24N80P Tube 300
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    TME IXFK24N80P 2 1
    • 1 $13.17
    • 10 $10.50
    • 100 $9.44
    • 1000 $9.44
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    Chip Stock IXFK24N80P 1,100
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    Amphenol Aerospace QWLD09R24N80P

    RECEPT
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    DigiKey QWLD09R24N80P Bulk 2
    • 1 -
    • 10 $927.24
    • 100 $927.24
    • 1000 $927.24
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    Newark QWLD09R24N80P Bulk 1
    • 1 $1135.87
    • 10 $1112.69
    • 100 $1066.33
    • 1000 $1066.33
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    Interstate Connecting Components QWLD09R24N80P
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    Amphenol Aerospace QWLD02C24N80P

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    DigiKey QWLD02C24N80P Bulk 2
    • 1 -
    • 10 $732.14
    • 100 $732.14
    • 1000 $732.14
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    Newark QWLD02C24N80P Bulk 1
    • 1 $1000.60
    • 10 $927.39
    • 100 $866.37
    • 1000 $866.37
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    Interstate Connecting Components QWLD02C24N80P
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    24N80P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFR 24N80P VDSS ID25 = = ≤ ≤ RDS on trr (Electrically Isolated Back Surface) 800 13 420 200 V A Ω mΩ ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		24N80P PDF

    TO-264 weight

    Abstract: 24N80P 24n80 ixfk24n80p N-channel MOSFET to-247 ixfh24n80p IXFT24N80P
    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFH 24N80P IXFK 24N80P IXFT 24N80P VDSS = 800 V ID25 = 24 A Ω RDS on ≤ 400 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		24N80P O-247 O-268 TO-264 weight 24N80P 24n80 ixfk24n80p N-channel MOSFET to-247 ixfh24n80p IXFT24N80P PDF

    24n80

    Abstract: 24N80P ISOPLUS247 24N8
    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFR 24N80P VDSS ID25 = = ≤ ≤ RDS on trr (Electrically Isolated Back Surface) 800 13 420 200 V A Ω mΩ ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		24N80P 24n80 24N80P ISOPLUS247 24N8 PDF

    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFH 24N80P IXFK 24N80P IXFT 24N80P VDSS = 800 V ID25 = 24 A Ω RDS on ≤ 400 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		24N80P O-247 O-268 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF