24MAY11 Search Results
24MAY11 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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hb2eContextual Info: Outline Dimensions Vishay Semiconductors I-PAK - S DIMENSIONS FOR I-PAK - S in millimeters E A b3 E1 c2 3 1 2 L L5 L4 H D D1 4 b2 e c e SYMBOL DIMENSIONAL REQUIREMENTS MIN. NOM. MAX. E 6.40 6.60 6.70 L 3.98 4.13 4.28 L4 0.66 0.76 0.86 L5 1.96 2.16 2.36 D 6.00 |
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24-May-11 hb2e | |
ht 1618Contextual Info: PRA 100, 135, 182 CNW Vishay Sfernice High Precision Thin Film Chip Resistor Arrays FEATURES PRA arrays can be used in most applications requiring a matched pair (or set) of resistor elements. The networks provide 1 ppm/°C TCR tracking, a ratio tolerance as tight as |
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AEC-Q200 2002/95/EC 11-Mar-11 ht 1618 | |
Contextual Info: VS-20CUT10, VS-20CWT10FN www.vishay.com Vishay Semiconductors High Performance Schottky Generation 5.0, 2 x 10 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop I-PAK TO-251AA • Extremely low reverse leakage D-PAK (TO-252AA) |
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VS-20CUT10, VS-20CWT10FN O-251AA) O-252AA) 2002/95/EC VS-20CUT10 11-Mar-11 | |
Contextual Info: ILD1615, ILQ1615 Vishay Semiconductors Optocoupler, Phototransistor Output, Dual, Quad Channel , 110 °C Rated Dual Channel FEATURES A 1 8 C C 2 7 E • Operating temperature from - 55 °C to + 110 °C A 3 6 C • Identical channel to channel footprint C 4 |
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ILD1615, ILQ1615 2002/95/EC 2002/96/EC UL1577, E52744 11-Mar-11 | |
Contextual Info: New Product VS-APU3006-F3, VS-EPU3006-F3 Vishay Semiconductors Ultrafast Rectifier, 30 A FRED Pt FEATURES • Low forward voltage drop • Ultrafast recovery time • 175 °C operating junction temperature • Compliant to RoHS Directive 2002/95/EC TO-247AC |
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VS-APU3006-F3, VS-EPU3006-F3 2002/95/EC O-247AC JEDEC-JESD47 11-Mar-11 | |
dpak DIODE ANODE COMMONContextual Info: VS-20CUT10, VS-20CWT10FN www.vishay.com Vishay Semiconductors High Performance Schottky Generation 5.0, 2 x 10 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop I-PAK TO-251AA • Extremely low reverse leakage D-PAK (TO-252AA) |
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VS-20CUT10, VS-20CWT10FN O-251AA) O-252AA) 2002/95/EC VS-20CUT10 2011/65/EU 2002/95/EC. 2002/95/EC dpak DIODE ANODE COMMON | |
Contextual Info: VS-10UT10, VS-10WT10FN www.vishay.com Vishay Semiconductors High Performance Generation 5.0 Schottky Rectifier, 10 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage I-PAK TO-251AA D-PAK (TO-252AA) |
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VS-10UT10, VS-10WT10FN O-251AA) O-252AA) 2002/95/EC JEDEC-JESD47 VS-10UT10 2011/65/EU 2002/95/EC. | |
Contextual Info: VS-6CUT04, VS-6CWT04FN www.vishay.com Vishay Semiconductors High Performance Schottky Generation 5.0, 2 x 3 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop I-PAK TO-251AA Base common cathode • Extremely low reverse leakage |
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VS-6CUT04, VS-6CWT04FN O-251AA) O-252AA) 2002/95/EC VS-6CUT04 2011/65/EU 2002/95/EC. 2002/95/EC | |
Contextual Info: VS-HFA30TA60CPbF Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • • • • Ultrafast and ultrasoft recovery Very low IRRM and Qrr Compliant to RoHS Directive 2002/95/EC Designed and qualified for industrial level BENEFITS |
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VS-HFA30TA60CPbF 2002/95/EC O-220AB O-220AB VS-HFA30TA60CPbF 11-Mar-11 | |
SQ3456BEV_RCContextual Info: SQ3456BEV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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SQ3456BEV AN609, 1080u 6325u 7639m 0386m 7330m 3147m 7568m 24-May-11 SQ3456BEV_RC | |
Contextual Info: SQD40N10-25_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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SQD40N10-25 AN609, 2157m 8491m 1949m 0253m 5519m 6099m 1395m 24-May-11 | |
EPH3006Contextual Info: New Product VS-APH3006-F3, VS-EPH3006-F3 Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES • Low forward voltage drop • Hyperfast soft recovery time • 175 °C operating junction temperature • Compliant to RoHS Directive 2002/95/EC |
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VS-APH3006-F3, VS-EPH3006-F3 2002/95/EC O-247AC JEDEC-JESD47 VS-APH3006-F3 11-Mar-11 EPH3006 | |
APU3006Contextual Info: New Product VS-APU3006-F3, VS-EPU3006-F3 Vishay Semiconductors Ultrafast Rectifier, 30 A FRED Pt FEATURES • Low forward voltage drop • Ultrafast recovery time • 175 °C operating junction temperature • Compliant to RoHS Directive 2002/95/EC TO-247AC |
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VS-APU3006-F3, VS-EPU3006-F3 2002/95/EC O-247AC JEDEC-JESD47 VS-APU3006-F3 11-Mar-11 APU3006 | |
Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PA 6T FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOYS CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C |
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UL94-V0 E323964 | |
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Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PA 6T FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOYS CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C |
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UL94-V0 E323964 22-JUL-11 24-MAY-11 | |
5V dual channel optocouplerContextual Info: ILD1615, ILQ1615 Vishay Semiconductors Optocoupler, Phototransistor Output, Dual, Quad Channel , 110 °C Rated Dual Channel FEATURES A 1 8 C C 2 7 E • Operating temperature from - 55 °C to + 110 °C A 3 6 C • Identical channel to channel footprint C 4 |
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ILD1615, ILQ1615 2002/95/EC 2002/96/EC UL1577, E52744 2011/65/EU 2002/95/EC. 2011/65/EU. 5V dual channel optocoupler | |
94047Contextual Info: VS-HFA08TB60PbF Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • Ultrafast and ultrasoft recovery Very low IRRM and Qrr Compliant to RoHS Directive 2002/95/EC Designed and qualified for industrial level BENEFITS • |
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VS-HFA08TB60PbF 2002/95/EC VS-HFA08TB60PbF 11-Mar-11 94047 | |
Contextual Info: ILD55, ILQ30, ILQ31, ILQ55 Vishay Semiconductors Optocoupler, Photodarlington Output, Dual, Quad Channel FEATURES Dual Channel A 1 8 E C 2 7 C C 3 6 C • Fast fall time, 35 s A 4 5 E • Single, dual and quad channel • 125 mA load current rating • Fast rise time, 10 μs |
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ILD55, ILQ30, ILQ31, ILQ55 2002/95/EC 2002/96/EC UL1577, E52744 i179trademarks 2011/65/EU | |
Contextual Info: VS-HFA08TB120PbF Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • Ultrafast and ultrasoft recovery Very low IRRM and Qrr Compliant to RoHS Directive 2002/95/EC Designed and qualified for industrial level BENEFITS |
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VS-HFA08TB120PbF 2002/95/EC O-220AC O-220AC VS-HFA08TB120PbF 11-Mar-11 | |
PRA135
Abstract: ipc-7351 IPC-7351A VISHAY PRA
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2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PRA135 ipc-7351 IPC-7351A VISHAY PRA | |
Contextual Info: ILD55, ILQ30, ILQ31, ILQ55 Vishay Semiconductors Optocoupler, Photodarlington Output, Dual, Quad Channel FEATURES Dual Channel A 1 8 E C 2 7 C C 3 6 C • Fast fall time, 35 µs A 4 5 E • Single, dual and quad channel • 125 mA load current rating • Fast rise time, 10 µs |
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ILD55, ILQ30, ILQ31, ILQ55 2002/95/EC 2002/96/EC UL1577, E52744 2011/65/EU 2002/95/EC. | |
Contextual Info: VS-6CUT04, VS-6CWT04FN www.vishay.com Vishay Semiconductors High Performance Schottky Generation 5.0, 2 x 3 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop I-PAK TO-251AA Base common cathode • Extremely low reverse leakage |
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VS-6CUT04, VS-6CWT04FN O-251AA) O-252AA) VS-6CUT04 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC | |
Contextual Info: IL255 Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, with Base Connection FEATURES DIP • AC or polarity insensitive inputs • Continuous forward current, 130 mA • Built-in reverse polarity input protection A/C 1 6 B C/A 2 5 C • Industry standard DIP package |
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IL255 2002/95/EC 2002/96/EC i179005-3 IL255 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
Contextual Info: IL202, IL203 Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, with Base Connection FEATURES DIP • Guaranteed at IF = 1.0 mA A 1 6 B C 2 5 C 3 4 E NC SMD • High collector emitter voltage, BVCEO = 70 V • Long term stability |
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IL202, IL203 2002/95/EC 2002/96/EC E52744 i179005-3 IL203 2002/95/EC. |