24GHZ AMPLIFIER Search Results

H40P

Abstract: MARCONI power NN12 P35-5134-000-200
Contextual Info: P35-5134-000-200 HEMT MMIC 1W POWER AMPLIFIER, 24GHz Features • • • Gain; 16dB typical @ 24GHz P-1dB; 30.5dBm typical @ 24GHz 0.20 ? m pHEMT technology Description The P35-5134-000-200 is a high performance 24GHz Gallium Arsenide power amplifier, capable of output powers

Ultrasonic cleaner circuit diagram

Abstract: MARCONI power P35-5133-000-200 H40P NN12
Contextual Info: P35-5133-000-200 HEMT MMIC 0.5W POWER AMPLIFIER, 24GHz Features • • • • Gain; 19dB typical @ 24GHz P-1dB; 29dBm typical @ 24GHz 20% PAE 0.20 um pHEMT technology Description The P35-5133-000-200 is a high performance 24GHz Gallium Arsenide power amplifier, capable of output powers

mmic n1

Contextual Info: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the

Contextual Info: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the

Contextual Info: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1,5dB MAX. @ f=20GHz NF=1.8dB (MAX.) @ f=24GHz NF=2.3dB (MAX.) @ f=28GHz • High Associated Gain: Gas=15.0dB (MIN.) @ f=20GHz Gas=12.0dB (MIN.) @ f=24GHz Gas=9.0dB (MIN.) @f=28GHz

24ghz

Abstract: FMM5701X
Contextual Info: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the

FMM5701X

Abstract: EUDYNA eudyna an
Contextual Info: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the

FMM5701X

Abstract: 18-28GHz
Contextual Info: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the

FMM5701LG

Abstract: 26GHz LNA nf 931 24ghz FMM5701X mmic n1 diode Free 18-24GHz 584 amplifer 584 MMIC microwave databook
Contextual Info: FMM5701LG LNA MMIC FEATURES • Low Noise Figure: NF=1.7dB MAX. @ f=20GHz NF=2.0dB (MAX.) @ f=24GHz • High Associated Gain: Gas=14dB (MIN.) @ f=20GHz Gas=12dB (MIN.) @ f=24GHz • Wide Frequency Band: 18-24GHz • LG package for SMT Applications DESCRIPTION

MARCONI power

Abstract: MARCONI amplifier
Contextual Info: P35-5115-000-200 HEMT MMIC LNA 17 - 24GHz Features • • Typical 2dB Noise Figure @ 24GHz Small 1.8 x 0.94mm Die Size Description The P35-5115-000-200 is a 17-24GHz Gallium Arsenide low noise amplifier. This product is intended for use in fixed-point microwave systems and satellite communications.

diode Free 18-24GHz

Abstract: 84-1LMI NN12 P35-5115-000-200 MARCONI amplifier
Contextual Info: P35-5115-000-200 HEMT MMIC LNA 17 - 24GHz Features • • Typical 2dB Noise Figure @ 24GHz Small 1.8 x 0.94mm Die Size Description The P35-5115-000-200 is a 17-24GHz Gallium Arsenide low noise amplifier. This product is intended for use in fixed-point and point to point microwave systems.

Contextual Info: RFAM9000 RFAM9000 100MHz to 24GHz, High Reliability Military/Space Amp Connectorized 100MHZ TO 24GHZ, HIGH RELIABILITY MILITARY/SPACE AMP CONNECTORIZED Package: Module, 2 RF Connectors, 2 DC Pins, 21.34mmx7.77mmx4.69mm Features       

MIL-STD-883H

Contextual Info: RFAM9000 RFAM9000 100MHz to 24GHz, High Reliability Military/Space Amp Connectorized 100MHZ TO 24GHZ, HIGH RELIABILITY MILITARY/SPACE AMP CONNECTORIZED Package: Module, 2 RF Connectors, 2 DC Pins, 21.34mmx7.77mmx4.69mm Features       

18GHz

Abstract: CHA5293a-99F/00
Contextual Info: CHA5293a 17-24GHz High Power Amplifier GaAs Monolithic Microwave IC Description Vd1 Vd2 Vg3 Vd3 The CHA5293a is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication

PCB Rogers RO4003 substrate

Abstract: QFN-4x4 PCB Rogers RO4003 AN0017 CHX2090-QDG MO-220 RO4003 ro4003 rogers microstrip RF Semiconductors ic smd
Contextual Info: CHX2090-QDG RoHS COMPLIANT 12-24GHz Frequency Multiplier GaAs Monolithic Microwave IC in SMD leadless package Description The CHX2090-QDG is a cascadable frequency doubler monolithic circuit, which integrate an output buffer amplifier that produces a constant

A1266

Abstract: transistor a1266 a1266 transistor A-1266
Contextual Info: EC4H08C Ordering number : ENA1266 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC4H08C UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • High cut-off frequency : fT=24GHz typ VCE=3V . Low operating voltage.

pin diagram of ic 7493

Abstract: ic 7493 pin function of ic 7493 7493 IC 7493 pc data sheet IC 7493 TRANSISTOR cBC 415 marking MD 7493 7493 APPLICATION
Contextual Info: Ordering number : ENN7493 SBFP450M SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor SBFP450M High-Frequency Medium-Output Amplifier, RF Driver / Power Amp Applications Features • • • • Low noise : NF=1.25dB typ f=1.8GHz . High cut-off frequency : fT=24GHz typ

CHA2090-99F/00

Abstract: bp 1361 CHA2090 MS11 MS12 MS21 MS22 PS11 PS12 PS22
Contextual Info: CHA2090 RoHS COMPLIANT 17-24GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via

Contextual Info: CHA2090 RoHS COMPLIANT 17-24GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard 0.25µm gate length pHEMT process, via

CHA2292

Contextual Info: CHA2292 RoHS COMPLIANT 16-24GHz Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2292 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication

24ghz

Abstract: CHA2292
Contextual Info: CHA2292 RoHS COMPLIANT 16-24GHz Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2292 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication

Contextual Info: CHA4863-QGG RoHS COMPLIANT 17-24GHz Variable Gain Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA4863-QGG is a variable gain broadband four stage monolithic amplifier. It is designed for a wide range of applications, typically

Contextual Info: CHX2090-QDG RoHS COMPLIANT 12-24GHz Frequency Multiplier GaAs Monolithic Microwave IC in SMD leadless package Description The CHX2090-QDG is a cascadable frequency doubler monolithic circuit, which integrate an output buffer amplifier that produces a constant output power over a

Contextual Info: CHA5293a 17-24GHz High Power Amplifier GaAs Monolithic Microwave IC Description Vd1 Vd2 Vg3 Vd3 The CHA5293a is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication