2481 DIODE Search Results

Contextual Info: SCHOTTKY BARRIER DIODE FSH05A03L FSH05A03LB sa/sov 3.H.122 , MAX FEATURES 10.3Î405J M AX -l.8l.189) 3 .4 U 3 4 U , /.WI[Ä)D ^ / T ? O T D IA rMAX o Similar to T0-220AC and T0-220AB Case — f— o Fully Molded Isolation 6.912721 6.3Î.2481 2.851112) *

Contextual Info: SCHQTTKY BARRIER DIODE F16P05QS F16P06QS 17.7A/50— 60V 3.11.1221 M AX FEATURES lu : i 405] MAX 4 8i.l*5*i *M A X i ° Similar to T0-220AB Case, Fully Molded Isolation -.‘ 721 6.3i 2481 28:>C.llï 2 5S .Hm o Dual Diodes - Cathode Common 1 ) 4i 6')t>i 14.&5*31

LA-2481

Abstract: SIL1362 Llano CPU sld9630tt EDX20 compal TOSHIBA M9 CH7308 Llano C33056
Contextual Info: A B C D E MODEL NAME : EDX20 PCB NO : LA-2481 1 PVT 1 COMPAL CONFIDENTIAL 2 2 EDX20 Schematics Document 2005-02-22 REV: 0.5 3 3 4 4 Compal Electronics, Inc. Title PROPRIETARY NOTE A B THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL AND

LTC2481

Abstract: LTC2481CDD LTC2481IDD PIC16F7 LTC2481IDDTRPBF LTC2481H
Contextual Info: LTC2481 16-Bit ΔΣ ADC with Easy Drive Input Current Cancellation and I2C Interface DESCRIPTION FEATURES n n n n n n n n n n n n n n n Easy Drive Technology Enables Rail-to-Rail Inputs with Zero Differential Input Current Directly Digitizes High Impedance Sensors with

LTC2481

Abstract: LTC2481CDD LTC2481IDD Optrex
Contextual Info: LTC2481 16-Bit ΔΣ ADC with Easy Drive Input Current Cancellation and I2C Interface DESCRIPTION FEATURES n n n n n n n n n n n n n n n Easy Drive Technology Enables Rail-to-Rail Inputs with Zero Differential Input Current Directly Digitizes High Impedance Sensors with

LTC2481H

Contextual Info: LTC2481 16-Bit ΔΣ ADC with Easy Drive Input Current Cancellation and I2C Interface DESCRIPTION FEATURES n n n n n n n n n n n n n n n Easy Drive Technology Enables Rail-to-Rail Inputs with Zero Differential Input Current Directly Digitizes High Impedance Sensors with

16f73

Abstract: LTC2481 50hz to 60hz converter circuit diagram LTC2481IDD LTC2481CDD Omega k type thermocouple range c2481 LTC2481H
Contextual Info: LTC2481 16-Bit ΔΣ ADC with Easy Drive Input Current Cancellation and I2C Interface DESCRIPTION FEATURES n n n n n n n n n n n n n n n Easy Drive Technology Enables Rail-to-Rail Inputs with Zero Differential Input Current Directly Digitizes High Impedance Sensors with

50Hz to 60Hz circuit diagram

Abstract: spi_master how to use STRAIN GAUGE 50hz to 60hz converter circuit diagram CCS-PCM driving LCD in ccs compiler PROGRAM PIC16F73 LTC2481 LTC2481CDD
Contextual Info: LTC2481 16-Bit ∆Σ ADC with Easy Drive Input Current Cancellation and I2C Interface U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Easy Drive Technology Enables Rail-to-Rail Inputs with Zero Differential Input Current Directly Digitizes High Impedance Sensors with

Contextual Info: LTC2481 16-Bit ∆Σ ADC with Easy Drive Input Current Cancellation and I2C Interface U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Easy Drive Technology Enables Rail-to-Rail Inputs with Zero Differential Input Current Directly Digitizes High Impedance Sensors with

LTC2481H

Contextual Info: Features Easy Drive Technology Enables Rail-to-Rail Inputs with Zero Differential Input Current n Directly Digitizes High Impedance Sensors with Full Accuracy n Programmable Gain from 1 to 256 n GND to V CC Input/Reference Common Mode Range n 2-Wire I2C Interface

Contextual Info: Kamstrup 351 Generation C DATA SHEET „ Current transformer meter „ Type approved according to: „ Apparent power values per phase and total KVA, PF • Active energy EN 50470-1 (MID) EN 50470-3 (MID) „ Voltage Quality Measurements „ Optimized for Smart Metering

K2481

Abstract: 2481 diode sy 710 diode
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2481 SW ITCHING N-CHANNEL POWER M O S FET INDUSTRIAL USE DESCRIPTION The 2SK2481 is N -C hannel MOS Field E ffect T ra n s is to r de­ P A C K A G E D IM E N S IO N S in m illim e te rs sig n e d fo r high v o lta g e s w itc h in g a p p lic a tio n s .

Contextual Info: ' > 3 7 h ¿ i-rf U 7 1 —K Schottky Barrier Diode vom Tw in Diode M M ttfèm SF10SC4 o u t lin e dim ensions 40 V 10A • ii^ • T j 1 5010 y iK ^ y '^ T U ii •p rrsm f •* g & * ÌE 2 K V S B •SR SS •D C /D C ^ y i i - 9 •mm, v -h . OAHäi • a « - iï—pyimsè

7826 Transistor

Abstract: TA 7129 transistor c 3205 3205 4812 6558 6581 6623 C 3205 circuit 4466
Contextual Info: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 670 V 3600 V + Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D

en 12895

Abstract: D0-213AA 1N4467 1N4466
Contextual Info: Zener Regulator Diodes Microsemi I Package Division ¡ Outline Type Mil Power Data Spec Sheet ID W Zzk £ i Part Number M/craggn/ Vz (V) Izt (mA) Zzt <n) 10 10 10 10 10 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 12 12 12 12 12 12

bluetooth transmitter receiver circuit diagram

Abstract: latest bluetooth circuits diagrams bluetooth RF transceiver bluetooth transmitter circuit diagram bluetooth transmitter receiver
Contextual Info: INTEGRATED CIRCUITS DATA SHEET UAA3559UH Bluetooth RF transceiver Objective specification 2003 Jul 04 Philips Semiconductors Objective specification Bluetooth RF transceiver UAA3559UH FEATURES • Low cost solution for a BluetoothTM 1 radio • Fully integrated receiver with high sensitivity

latest bluetooth circuits diagrams

Abstract: Crystal oscillator AIR TX-B 12 MHz bluetooth transmitter receiver circuit diagram HVQFN32 MO-220 IC 2003 UAA3559 UAA3559HN
Contextual Info: INTEGRATED CIRCUITS DATA SHEET UAA3559HN Bluetooth RF transceiver Objective specification 2003 Jul 04 Philips Semiconductors Objective specification Bluetooth RF transceiver UAA3559HN FEATURES • Low cost solution for a BluetoothTM 1 radio • Fully integrated receiver with high sensitivity

c 3953

Abstract: 6914 D1809N PD 1515 V 2238 D1069N D269N D3301N D749N D849N
Contextual Info: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 670 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]

Motorola TE 2482

Abstract: 34017 34017p te 2482 motorola MC34018 MC34017 TE 2482
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C 34017 Telephone Tone Ringer Bipolar Linear/|2|_ P SUFFIX j • • • • • • • C om plete Telephone Bell R eplacem ent C ircu it w ith M inim um External C om ponents O n -C h ip D iode Bridge and Transient Protection

6914

Abstract: 2481 diode 1298 D1069N D1809N D269N D3301N D749N D849N
Contextual Info: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 670 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]

K1684

Abstract: 2SK1684 FP5W90
Contextual Info: H V X y 'J -X A °7-M 0S FE T HVX S eries Power MOSFET 2SK1684 • flflN -JÄ E I OUTLINE DIMENSIONS [FP5W90] 900V 5A • A * S » Ciss m Æ H. y ? y 7 ? '( k tm *\ •7.>f •AC240V*A* 7.-< y • x - r y ? V ^ Ä ä f fiS E S ä S e ^ v n - ? ■ Æ të fl

74881

Abstract: S71394 SUD50NP04-48 74*881
Contextual Info: SPICE Device Model SUD50NP04-48 Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30ASJ-06 HIGH-SPEED SWITCHING USE FS30ASJ-06 • 4V DRIVE • V dss .60V • rDS ON (MAX) . 30mQ

MPQ3725

Abstract: transistor 2482 2482 TRANSISTOR
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Core Driver Transistor MPQ3725 NPN Silicon cmpài na rm Ep m m Motorola Preferred Device ir^J l A J NPN [ v i r v i li] ili lij Li J Li| lìj LiJ MAXIMUM RATINGS Rating Symbol Value v CEO 40 V dc C o lle c to r- E m itter Voltage