240PH Search Results

IRL2505

Contextual Info: PD - 9.1326C International IO R Rectifier IRL2505S/L HEXFET Power M OSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL2505S Low-profile through-hole (IRL2505L) 175°C Operating Temperature Fast Switching

Contextual Info: MODEL IM Inductors Military* M IL-C -15305 Q ualified , Type LT and C om m ercial, M olded FEATURES • Wide inductance range in small package • Flame retardant coating • Precision performance, excellent reliability, sturdy construction • Epoxy molded construction provides superior

Contextual Info: PD - 9.1325A International l R Rectifier IRL2505 PRELIMINARY HEXFET Power MOSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated

Contextual Info: MODEL IR Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES • Flame-retardant coating • Color band identification • Excellent environmental characteristics • Uniform coating is excellent for automatic insertion • Comparable in quality to molded chokes at a lower

Contextual Info: IM_ VISHAY Vishay Dale Inductors Military, MIL-C-15305 Qualified, Type LT and Commercial, Molded FEATURES • W ide inductance range in small package. • Flame retardant coating. • Precision performance, excellent reliability, sturdy construction.

Contextual Info: A COMPANY OF MODEL IM Inductors M ilitary M IL-C-15305 Q ualified, Type LT and C om m ercial, Molded FEATURES • Wide inductance range in small package • Flame retardant coating • Precision performance, excellent reliability, sturdy construction • Epoxy molded construction provides superior

Contextual Info: PD - 9.1326B International IOR Rectifier IRL2505S PRELIM IN ARY HEXFET Power MOSFET • • • • • • • • Logic-Level Gate Drive Advanced Process Technology Surface Mount Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature

Contextual Info: International [ragRectifier PD — IRLI2505 PRELIMINARY H EXFET^ Power M OSFET • Logic-Level Gate Drive • Advanced Process Technology • Ultra Low On-Resistance • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm

HP16047A

Abstract: 100 microhenry inductor inductors 3,9 micro-henry inductors 33 micro-henry inductor 15 microhenry 4275a 16047A
Contextual Info: LCR Series 1027,1539 and 1842 Molded Unshielded RF, LCR COILS PHENOLIC CORE LEAP SIZE- .¿—LEAP—^ -LENGTH LENGTH N j PKI/n 1 / 1027-94K 1027-96K 1027-00K 1027-02K 1027-04K 1027-06K 1027-08K 1027-1 OK 1027-12K 1027-14K 1027-16K 1027-18K 1027-20K .10 .12

EQUIVALENT OF IRL2505

Abstract: IRL2505 equivalent IRL2505 sd marking bh
Contextual Info: PD - 9.1327A International IGR Rectifier IRLI2505 HEXFET Power M O SFET • Logic-Level Gate Drive • Advanced Process Technology • Ultra Low On-Resistance • Isolated Package • High Voltage Isolation = 2.5KVRMS ® • Sink to Lead Creepage Dist. = 4.8mm

Contextual Info: _Model IM VISHAY Vishay Dale Inductors Military, M IL-C -15305 Qualified, Type LT and Commercial, Molded FEATURES • Wide inductance range in small package. • Flame retardant coating. • Precision performance, excellent reliability, sturdy

Contextual Info: International [re s ] Rectifier PD — IR L P 2 5 0 5 PRELIMINARY HEXFET Power MOSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching