24 VDC SUPPLY, 10 TO 200 MHZ, GENERAL PURPOSE Search Results

linear amplifier module

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line General Purpose Linear Amplifier Module MHW1345 Features • • • • • 34.5 dB Typical Gain @ 100 MHz Silicon Bipolar Technology Class A Operation Typical ITO = +44 dBm @ 200 MHz Unconditionally Stable Under All Load Conditions

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line General Purpose Linear Amplifier Module MHW1345 Features • • • • • 34.5 dB Typical Gain @ 100 MHz Silicon Bipolar Technology Class A Operation Typical ITO = +44 dBm @ 200 MHz Unconditionally Stable Under All Load Conditions

MHW1345

Abstract: 24 Vdc Supply, 10 to 200 MHz, General Purpose ca2830 CA2830C
Contextual Info: MOTOROLA Order this document by MHW1345/D SEMICONDUCTOR TECHNICAL DATA The RF Line General Purpose Linear Amplifier Module MHW1345 Features • • • • • 34.5 dB Typical Gain @ 100 MHz Silicon Bipolar Technology Class A Operation Typical ITO = +44 dBm @ 200 MHz

40A Adjustable Power Supply Schematic Diagram

Abstract: schematic diagram Power supply 500w 9916250024 500w class d circuit diagram schematic 1000w CLASS D schematic diagram schematic diagram 48V 500W Controller CP SNT 120W Schematic Circuit Diagram CP SNT 300W 8708670000 1000W boost converter
Contextual Info: I n t ro d u c t i o n — P o w e r D e l i v e r y P ro d u c t s Weidmuller offers two categories of Power Delivery Solutions: General Purpose and Advanced Features products. General Purpose Products fulfill minimum power delivery requirements, while Advanced Features products are designed for more demanding applications.

Contextual Info: Freescale Semiconductor Technical Data MHW1345 Rev. 0, 10/2002 General Purpose Linear Amplifier Module Features • 34.5 dB Typical Gain @ 100 MHz • Silicon Bipolar Technology • Class A Operation • Typical ITO = +44 dBm @ 200 MHz • Unconditionally Stable Under All Load Conditions

MHW1345

Abstract: CA2830C
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MHW1345/D SEMICONDUCTOR TECHNICAL DATA The RF Line General Purpose Linear Amplifier Module MHW1345 Features • • • • • 34.5 dB Typical Gain @ 100 MHz Silicon Bipolar Technology Class A Operation

MHW591

Abstract: MHW590 MHW592 MHW593 MOTOROLA wideband hybrid amplifiers motorola MHW592 MWA110 MWA330 Motorola Mhw591 CASE-714
Contextual Info: RF PRODUCTS — HYBRID AMPLIFIERS continued General-Purpose Wideband Hybrid Amplifiers 3 1 Davies Frequency Range MHz IpIMp Supply vonpgv Vdc Gain tUllA*n MHvTyp Output Level 1 dB Compression Noli» Figura ;(| @ £50 MHz mW/r (MHz) 50 ft-1 0 0 a WIDEBAND AMPLIFIERS (Case 714-02)

MHW1345N

Abstract: CA2830C MHW1345
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHW1345N Rev. 3, 5/2006 General Purpose Linear Amplifier Module Features • 34.5 dB Typical Gain @ 100 MHz • Silicon Bipolar Technology • Class A Operation • Typical ITO = +44 dBm @ 200 MHz • Unconditionally Stable Under All Load Conditions

Contextual Info: Freescale Semiconductor Technical Data MHW1345 Rev. 0, 10/2002 General Purpose Linear Amplifier Module Features • 34.5 dB Typical Gain @ 100 MHz • Silicon Bipolar Technology • Class A Operation • Typical ITO = +44 dBm @ 200 MHz • Unconditionally Stable Under All Load Conditions

Contextual Info: Freescale Semiconductor Technical Data Replaced by MHW1345N. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. MHW1345 General Purpose Linear Amplifier Module LIFETIME BUY Features • 34.5 dB Typical Gain @ 100 MHz

MHW1345

Abstract: MHW1345N CA2830C linear amplifier module
Contextual Info: Freescale Semiconductor Technical Data General Purpose Linear Amplifier Module LIFETIME BUY Features • 34.5 dB Typical Gain @ 100 MHz • Silicon Bipolar Technology • Class A Operation • Typical ITO = +44 dBm @ 200 MHz • Unconditionally Stable Under All Load Conditions

Contextual Info: MHW1345 Rev. 1, 2/2006 Freescale Semiconductor Technical Data Will be replaced by MHW1345N by end of Q206. N suffix indicates RoHS compliant part. MHW1345 General Purpose Linear Amplifier Module Features • 34.5 dB Typical Gain @ 100 MHz • Silicon Bipolar Technology

omron relay octal base my series

Abstract: 68 pin pcb SCSI connector twin Phototransistor coil gold detector 5 terminal relay 2PDT, 10A Latch Relays transistor A6t 45 TACTILE SWITCH nc Mini-280 OMRON latching relay driver
Contextual Info: Control Components Master Selection Guide RELAYS SWITCHES PHOTOMICROSENSORS LIGHT EMITTING DEVICES MICRO SENSORS CONNECTORS Table of Contents Introduction 2-4 Relays 5 MOS FET 6 Low Signal 7 - 9 Power PCB 10 - 12 Automotive 13 - 14 General Purpose 15 - 16

135-869

Abstract: ML200C MMG3003NT1 A113 A114 A115 AN1955 C0603C103J5RAC C101 hk160822nj
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 7, 3/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

ML200C

Abstract: TRANSISTOR Z4 135-869 DB21 A113 A114 A115 AN1955 C0603C103J5RAC C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 6, 7/2007 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

STD 164997

Abstract: 014728 MMG3001NT1 MMG3001 89112 A113 A114 A115 AN1955 170-838
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3001NT1 Rev. 7, 3/2008 Heterojunction Bipolar Transistor Technology InGaP HBT Broadband High Linearity Amplifier MMG3001NT1 The MMG3001NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A,

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 4, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A,

MMG3006NT1

Abstract: AVX Manufacture Label ECUV1H150JCV
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 4, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A,

ECUV1H150JCV

Abstract: FR408 MMG3006NT1 A113 A114 A115 AN1955 C0603C103J5RAC C0603C104J5RAC C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 2, 3/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A, small - signal,

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 8, 2/2012 MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a general purpose amplifier that is internally input matched and internally output prematched. It is designed for a broad range

MMG3006NT1

Abstract: ECUV1H150JCV FR408 1008CS-150XJB AN1955 C0603C103J5RAC erj8geyj101 z667 CRCW06030000FKEA AVX Manufacture Label
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 3, 5/2010 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A,

Contextual Info: MOTOROLA Order this document by MMG3003NT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally

135-869

Abstract: ML200C transistor a114 diagram
Contextual Info: Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a general purpose amplifier that is internally input matched and internally output prematched. It is designed for a broad range

ML200C

Abstract: RK73B2ATTE7R5J A113 A114 A115 AN1955 C0603C103J5RAC C101 MMG3003NT1 75477
Contextual Info: Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad