24 SMD TRANSISTOR Search Results

TRANSISTOR BC 448 smd

Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
Contextual Info: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors

IF VIDEO DEMODULATOR

Abstract: television video section block diagram A5112 capacitor 1-35 L V6 SMD transistor package code V12 audio limiter ic b14 smd diode SMD package code V12 smd transistor n19 tda audio amplifier
Contextual Info: Video and Sound IF with FM-PLL Demodulator, AFC and V & S SCART TDA 5950X Bipolar IC Features ● ● ● ● Features video and sound IF Video and sound SCART AFC NTSC option P-DSO-24-1 Type Ordering Code Package TDA 5950X Q67000-A5112 P-DSO-24-1 SMD TDA 5950X

2N7002 NXP MARKING

Abstract: ON5520 fet SMD CODE PACKAGE SOT23 2n7002 nxp FET marking codes smd diode 2n7002 marking code 2N7002 smd TRANSISTOR code marking 05 sot23
Contextual Info: ON5520 N-channel TrenchMOS FET Rev. 01 — 24 March 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.

marking code E5 SMD ic

Abstract: smd transistor marking e5 TRANSISTOR SMD CODE PACKAGE SOT363 marking code e5 sot363 MARKING CODE E5 NXP BC846BPN E5 SMD Transistor TRANSISTOR SMD MARKING CODES transistor SMD MARKING CODE MARKING CODE SMD IC
Contextual Info: BC846BS 65 V, 100 mA NPN/NPN general-purpose transistor Rev. 01 — 24 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose transistor pair in a very small Surface-Mounted Device SMD plastic package. Table 1.

Contextual Info: BC846 series 65 V, 100 mA NPN general-purpose transistors Rev. 8 — 24 April 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device SMD plastic packages. Table 1. Product overview Type number[1]

MOSFET TRANSISTOR SMD MARKING CODE bh

Contextual Info: BCP55; BCX55; BC55PA 60 V, 1 A NPN medium power transistors Rev. 8 — 24 October 2011 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series in Surface-Mounted Device SMD plastic packages. Table 1. Product overview

MARKING CODE SMD IC

Abstract: smd code marking v8 sot23 MARKING SMD IC CODE smd marking code BC846 NXP BC856
Contextual Info: BC846 series 65 V, 100 mA NPN general-purpose transistors Rev. 8 — 24 April 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device SMD plastic packages. Table 1. Product overview Type number[1]

Contextual Info: SO T2 3 PMV30UN2 20 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

PMV40UN2

Contextual Info: SO T2 3 PMV40UN2 30 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: DF N1 01 0D -3 PMXB120EPE 30 V, P-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

PBLS2003D

Abstract: MARKING SMD PNP TRANSISTOR F8
Contextual Info: PBLS2003D 20 V PNP BISS loadswitch Rev. 01 — 24 June 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)

Contextual Info: DF N1 01 0D -3 PMXB350UPE 20 V, P-channel Trench MOSFET 24 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

PBLS2003S

Abstract: mosfet so8 smd LS2003S LS2003
Contextual Info: PBLS2003S 20 V PNP BISS loadswitch Rev. 02 — 24 August 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT96-1 (SO8) small Surface-Mounted Device (SMD)

so8 footprint

Abstract: PBLS2002S
Contextual Info: PBLS2002S 20 V PNP BISS loadswitch Rev. 02 — 24 August 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT96-1 (SO8) small Surface-Mounted Device (SMD)

Contextual Info: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

PBSS4420D

Abstract: PBSS5420D
Contextual Info: PBSS4420D 20 V, 4 A NPN low VCEsat BISS transistor Rev. 02 — 24 September 2008 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

PBSS304ND

Abstract: PBSS304PD tsop6 marking 312 TRANSISTOR SMD MARKING CODE AJ
Contextual Info: PBSS304PD 80 V, 3 A PNP low VCEsat BISS transistor Rev. 02 — 24 March 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

Contextual Info: SO T2 23 PBHV9414Z 140 V, 4 A PNP high-voltage low VCEsat BISS transistor 24 January 2014 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

PB9110

Abstract: PBSS8110Z PBSS9110Z SC-73
Contextual Info: PBSS9110Z 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 24 July 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

PQMD12

Contextual Info: DF N1 10B -6 PQMD12 NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ 24 July 2013 Product data sheet 1. General description NPN/PNP double Resistor-Equipped Transistors RET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package.

2 input and gate 24v

Abstract: gate drive protection smd transistor 26 2SK3575 2SK35
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3575 TO-263 Unit: mm +0.1 1.27-0.1 Features 4.5V drive available. +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 70nC TYP. VDD = 24 V, VGS = 10 V, ID = 83 A Built-in gate protection diode

Contextual Info: Transistors MOSFET IC SMD Type Product specification 2SK3404 TO-263 +0.1 1.27-0.1 Features 4.5-V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 25 nC TYP. ID = 40 A, VDD = 24 V, VGS = 10 V Built-in gate protection diode

smd transistor nc 61

Abstract: 2SK3424
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3424 TO-263 +0.1 1.27-0.1 Features 4.5-V drive available Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 15.25-0.2 Low gate charge 5.60 MAX. VGS = 10 V, ID = 24 A +0.2 8.7-0.2 RDS(on)1 = 1.5m Unit: mm