23E D Search Results

LAS1800

Abstract: LAS-6320 LAS-6350 935V LAS3800 LAS-6321 LAS-6330 LSH-6325P LSH-6335P las6330
Contextual Info: MORRIHAN INTERNATIONAL 23E • 1,340470 000000b B ■ Ip 3E*5£/*ti - 7 ^

din 41332

Contextual Info: ROEDERSTEIN ELECTRONICS 23E D 7fl21bHM QQ0114D 7 Roederstein Low-Voltage Electrolytic Capacitors with Radial Leads in Aluminium Case, Insulated, Polarized pulse-proof Miniature electrolytic capacitors for vertical mounting in printed circuits, with good temperature behaviour, high

R2R Ladder Resistor Network

Abstract: r2r ladder
Contextual Info: INTER NAT IONAL RE SI STI VE 23E D • 4057542 0000573 a ■ 7- - ¿ > 3 . - 0 5 ' IRC_ Self passivation layer and coating system provides environmental protection TANFiLMR-2R LADDER 12-BIT, 20-PIN DIP • Proven reliability

din 41240

Abstract: roederstein
Contextual Info: ROEDERSTEIN ELECTRONICS 23E D 7A21L24 ODOllTB b • A -0 5 -1 1 -0 1 Roederstein Low-Voltage Electrolytic Capacitors Axial Leads, Bipolar, Smooth Anodes, for Audio-Frequency, Applications In order to comply with the values of the admissible permanent service, the

1N708

Abstract: RD11A 1N733 1N732 1N735 n4111 RD13A zener 431 RD24A 1N728
Contextual Info: AMERICAN POWER DEVICES 23E D • 0737135 OQODODb D ■ ZENER DIODES 200mW American Power Devices offers a complete line of quality industrial, com­ mercial and military silicon regulators and temperature-compensated ref­ erences ranging from 200mW to 1W

4 digits 12-segment led display

Contextual Info: O K I SEMICONDUCTOR GROUP 23E D • b75424D DODbSSS b O K I semiconductor_ MSC7110-XX/ MSC7112-xx_ 12-SEGMENT, 16-DIGIT/ 16-SEGMENT, 12-DIGIT GENERAL DESCRIPTION The MSC7110-xx and MSC7112-xx are general purpose display controllers for vacuum fluorescent

RESISTOR SIP 9

Contextual Info: INTERNATIONAL R E S I S T I V E 23E D • 4Û57245 0000575 1 ■ * T - # o m in e _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 7 b* ~ ° * TANFILM CONFORMALLY COATED SIP • • • • • • • High alumina substrate NETWORKS High precision

NSL-4460

Abstract: NSL-4470 NSL-4450 FTC 580 e/NSL-801
Contextual Info: SILONEX INC 23E BSSS571 GDQGa'iT □ SILONEX; 1 W A T T PHOTOCONDUCTIVE CELLS NSL-4400 SERIES FEATURES • High Power Dissipation Capability @ 25° C: 1000 mW - Hermetically Sealed 500 mW - Plastic Encapsulated 750 mW on demand* - Plastic Encapsulated • Maximum Operating Voltage:

Contextual Info: O K I SEMICONDUCTOR GROUP 23E D Hi b72M24G 0DD7TTÔ 1 • DESCRIPTION OKI OL350A-4 is a 1.3/im high power laser diode DIP module with single mode fiber pigtail. Using excellent performance VIPS V-grooved Innerstripe on P-substrate LD, single mode fiber output

D12 roederstein

Abstract: Roederstein eyf
Contextual Info: 23E D ROEDERSTEIN ELECTRONICS 76211=24 0001205 T • A-05-11-03 High-Capacitive Electrolytic Capacitors with Solder Pins, Insulated, Polarized, Etched Electrodes, Pulse-Proof EYF 00 EYF 06 The EYF type belongs to the high-capacitive electrolytic capacitors that are noted for the small design, wide temperature ran­

Teledyne Semiconductor

Abstract: "teledyne components" TSC442 teledyne 325
Contextual Info: TELEDYNE COMPONENTS 23E Ô IlT b Q S TELEDYNE SEMICONDUCTOR 0005^30 4 TSC441 TSC442 TSC443 The Analog Signal Processing Com pany //PROCESSOR COMPATIBLE CMOS ANALOG SWITCHES FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Timing Diagram Data Address Latch On-Chip

up down counter using IC 7476

Abstract: full adder using Multiplexer IC 74151 74154 shift register IC sk 7443 full adder circuit using ic 74153 multiplexer DN 74352 full adder using ic 74138 74183 adder pin function of ic 74390 7478 J-K Flip-Flop
Contextual Info: FUJITSU MICROELECTRONICS FUJITSU 37417bH 0010SÔ3 23E D MB65XXXX MB66XXXX MB67XXXX AV CMOS SERÍES GATE ARRAYS ~ June 1986 Edition 2.0 : T - 4 2 - n - o °i DESCRIPTION S The Fujitsu MB65xxxx/MB66xxxx/MB67xxxx family are a series of high performance CMOS gate arrays designed to provide high

Contextual Info: FUJITSU MICROELECTRONICS FU JITSU 23E D 374T7L5 0007042 1 I MOS 262144-BIT DYNAMIC RANDOM ACCESS MEMORY MB 81464-10 MB 81464-12 MB 81464-15 June 1987 Edition 4.0 65,536 x 4 DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB 81464 is fu lly decoded, dynam ic random access m em ory

Contextual Info: FUJITSU MICROELECTRONICS F U J IT S U 23E D • 374*171*2 OQOaibT fi ■ ECtL4096'-BIT%í¿i BIPOLARRANDOM* ACCESS. MEMORY MBM10470A-7 August 1988 Edition 1,0 4096-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM10470A Is a fully decoded 4096-blt ECL read/w rite random access

Contextual Info: FUJITSU M I C R O E L ECT RO NICS FUJITSU 23E D • 374=l?bS T ■ ÜQ12ê37 _ ASSP 0201010100000000001005010101 Lamp Device Number Input Off Set Voltage mV 2 Function Lamp MB4210 Reference V(°mW Supply Voltage (V) Package Alternate Source 115 +18 (max)

b72 voltage regulator

Abstract: AN/URT-23E
Contextual Info: O K I SEMI CONDUCTOR GROUP 23E D • b7S454D ~ T 'S L - \ Z □ OOti4=14 1 - o .s O K I semiconductor _ MSC1187-XX_ DOT DRIVER WITH DIMMING FUNCTION G ENERAL DESCRIPTION The MSC1187-XX is a vacuum fluorescent display tube driver IC using the Bi-CMOS process for

ZENER A12

Abstract: 1N4771 1N4772 1N4770A 1N4773 1N4772A 1N825 1N825A 1N4771A 1N4770
Contextual Info: ' AMERICAN POWER DEVICES 23E D • 0737135 OOGOGn T ■ 7 - / / - o v TCZENER DIODES 250mW, TC Type DO-7 Case Zener Voltage Min. Max. V7 V vz V Test Current Maximum^ Dynamic Impedance >7T mA ZZT@ 'ZT a Voltage Temperature Stability AVt t Max. mV 7 .5 15 10

Contextual Info: FUJITSU MICROELECTRONICS 23E D 37H171.2 OOQVtba T • T - ^ z - i- io October 1989 Edition 4.0 f u jÌ t s u DATA SH EETz MB81C84A-35/-45 CMOS 256K-BIT HIGH SPEED SRAM 65,536 WORDS X 4 BITS HIGH SPEED STATIC RANDOM A CCESS MEMORY WITH AUTOMATIC POWER DOWN

Contextual Info: FUJITSU MICROELECTRONICS 23E D • 374=171=5 000*1302 O ■ F U JITSU April 1988 Edition 1.0 'T :4 k -iV Z 7 256K BIT 32,768 X 8 CMOS ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY Tho Fujitsu MBM28C256 Is a high speed read-only static memory that Is electrically

Contextual Info: AMERICAN POWER DEVICES 23E D 0737135 D O O O O m b T - - '/-.Ò ? ZENER DIODES DO-35 Case 400mW Nominal Zener Voltage Vz @ Izt V Typet Test Current Izt mA Maximum: : Dynamic Impedance Zzt @ Izt D °C - 1N5518 1N5519 1N5520 1N5521 3.3 3.6 3.9 4.3 20 26 24 22

5m diode

Contextual Info: O K I SE MI CONDUCTOR GROUP 23E ta7 E 4 2 4 0 D 0007^75 5 T-41-07 1.2/im Laser Diode * 0L201 A, 0L203A • DESCRIPTION OKI OL201A, OL203A are 1.2//m InGaAsP/lnP laser diodes developed as light sources for fiber-optic communications and optical equipment. • FEATURES

zener IN 5232

Abstract: zener diode in 5229 b AMERICAN POWER DEVICES fenwal LL34 5252 diode
Contextual Info: AMERICAN american power devices POWER DEVICES 23E ZENER DIODES A Fenwal Electronics, Inc. Company kn*. D 0737135 GGÜ0030 MELF PACKAGED & T -IH I ZENER DIODES: A summary These are devices with sharp reverse breakdown regions. They are designed to be operated at their breakdown voltage as constant voltage elements for control

nsl70

Abstract: SILONEX INC
Contextual Info: ’SILONEX INC 23E 0 • ÛSSS5 71 GDG0314 3_ ■ CO SILONEX ! SILICON PHOTOVOLTAIC C E L L S Ï - ^ , 1 , <r, FEATURES • • • • Fast response High reliability, long life Protective, humidity resistant coating Operating Temperature Range: -6 5 °C to 1258C

Contextual Info: FUJITSU M I C RO EL ECTR ON ICS 23E D 374T7LS 0000217 4 October 1989 Edition 1.0 - FUJITSU DATASHEET : MBM101474A-3 4096-B IT BIPOLAR ECL RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MEJM101474A Is fuly decoded 4096-blt ECL read/write random access memory designed or high-speed scratch pad, control and buffer storage applications.