23DBM MMIC Search Results

MMIC marking CODE c4

Contextual Info: GaAs MMIC CGB 241 Target Datasheet ?2 stages Bluetooth InGaP HBT-Power Amplifier ?Single Voltage Supply ?Operating voltage range: 2.0 to 6 V ?Pout = 23dBm at Vd=3.2V

c4 09 smd marking code

Contextual Info: GaAs MMIC CGB 240 Datasheet ?2 stages Bluetooth InGaP HBT-Power Amplifier ?Single Voltage Supply ?Operating voltage range: 2.0 to 6 V ?Pout = 23dBm at Vd=3.2V

FMA3009

Abstract: MIL-HDBK-263 Three bond
Contextual Info: FMA3009 Preliminary Datasheet v2.1 2-20GHZ BROADBAND MMIC AMPLIFIER FEATURES: • • • • • • • • FUNCTIONAL SCHEMATIC: Cascode Configuration 10dB Gain Single Supply 23dBm P1dB Output Power at 8.0V pHEMT Technology Bias Control Input Return Loss <-10dB

microwave MARCONI

Abstract: H40P NN12 P35-5123-000-200 MARCONI power
Contextual Info: P35-5123-000-200 HEMT MMIC DRIVER AMPLIFIER, 20 - 26GHz Features • • • 23dBm Output Power @ 24GHz 12dB Gain from 20 to 26GHz Small 2 x 1mm Die Size Description The P35-5123-000-200 is a high performance 20-26GHz Gallium Arsenide driver amplifier. When 0.3mm

bookham 346

Abstract: H40P NN12 P35-5123-000-200
Contextual Info: Data sheet HEMT MMIC Driver Amplifier, 20 - 26GHz Features • 23dBm Output Power @ 24GHz • 12dB Gain from 20 to 26GHz The P35-5123-000-200 is a high performance 20-26GHz Gallium Arsenide driver amplifier. With 0.3mm bondwires at the input and output, over 12dB gain from 20-26GHz is

MOC 361

Abstract: H40P NN12 P35-5123-000-200 bond wire gold marconi
Contextual Info: Marconi Optical Components P35-5123-000-200 HEMT MMIC Driver Amplifier, 20 - 26GHz Features • 23dBm Output Power @ 24GHz · 12dB Gain from 20 to 26GHz · Small 2 x 1mm Die Size Description The P35-5123-000-200 is a high performance 20-26GHz Gallium Arsenide driver amplifier. When 0.3mm bondwires are

Traveling Wave Amplifier

Abstract: AMMP-5024
Contextual Info: Preliminary Information Agilent AMMP-5024 100 kHz – 40 GHz Traveling Wave Amplifier Data Sheet Features • 5x5mm Surface Mount Package • Wide Frequency Range 100kHz - 40GHz • P-1dB of 23dBm 1 • High Gain of 15 dB 2 3 • 50 Ω match on Input and Output

SN62

Abstract: 210C RO4003 TGA2702 TGA2702-SM
Contextual Info: Advance Product Information November 2, 2004 802.16 Driver / Power Amplifier TGA2702-SM Key Features • • • • • • • • • 2.4-2.8 GHz Bandwidth 2.5% EVM @ 23dBm 802.11g OFDM signal 39 dBc IMD3 @ 21 dBm Pout/tone 24 dB Nominal Gain 29.5 dBm Nominal P1dB

NJG1518KB2

Abstract: 100MHz-500MHz
Contextual Info: NJG1518KB2 SPDT スイッチ GaAs MMIC •概要 NJG1518KB2 は低損失、中電力、高アイソレーションを 特徴とする SPDT スイッチです。 50MHz から 3GHz の広帯域、2.5V からの低電圧で動作し、 切替電圧 2.7V にて 23dBm、切替電圧 6.5V にて 34.5dBm の電

958M

Contextual Info: Panasonic GaAs MMICs GN01059B GaAs IC with b u ilt-in fe rro e le ctric D is trib u tin g a m p lifie r • • • Features High-isolation distribution amplifier High-gain Low consumption current Small package: Mini 6pin ■ A b s o lu te M a xim u m R atings (Ta = 25°C)

Contextual Info: GaAs MMICs GN01059B GaAs IC with built-in ferroelectric Distributing amplifier unit: mm +0.2 2.8 –0.3 +0.25 +0.1 +0.1 Power supply voltage VDD 6 V Max input power Pin 3 dBm Allowable power dissipation PD 40 mW Operating ambient temperature Topr −35 to +90

Contextual Info: GaAs MMICs GN01059B GaAs IC with built-in ferroelectric Distributing amplifier unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1 Max input power Allowable power dissipation Operating ambient temperature Storage temperature 3 +0.1 +0.1 0.16–0.06 4 0.8 +0.2 2.9 –0.05

Contextual Info: GaAs MMICs GN01059B GaAs IC with built-in ferroelectric Distributing amplifier unit: mm +0.2 +0.25 1 Unit Power supply voltage VDD 6 V Max input power Pin 3 dBm Allowable power dissipation PD 40 mW Operating ambient temperature Topr −35 to +90 °C Storage temperature

NJG1649

Abstract: NJG1649HB6 FR4 substrate 10GHz
Contextual Info: NJG1649HB6 SPDT SWITCH GaAs MMIC Q GENERAL DESCRIPTION NJG1649HB6 is a GaAs SPDT switch IC suited for W-LAN, Bluetooth and sub-microwave applications. This device can operate a single bit control signal from +1.3V. The ultra-small & ultra-thin USB8-B6 package is adopted.

Contextual Info: NJG1650HB6 SP3T SWITCH GaAs MMIC • GENERAL DESCRIPTION NJG1650HB6 is a SP3T switch IC featured low insertion loss, high isolation and small size package. This switch is suitable for W-LAN, Bluetooth, and sub-microwave applications. A small and thin package of USB8-B6 is adopted.

NJG1649

Abstract: NJG1649HB6
Contextual Info: NJG1649HB6 SPDT スイッチ GaAs MMIC •概要 ■外形 NJG1649HB6 は低損失を特徴とした無線 LAN, Bluetooth 等の中 電力用途の SPDT スイッチです。 本スイッチ IC は 1 ビットの入力制御信号により RF ポートの切

Contextual Info: NJG1650HB6 SP3T SWITCH GaAs MMIC ! GENERAL DESCRIPTION NJG1650HB6 is a SP3T switch IC featured low insertion loss, high isolation and small size package. This switch is suitable for W-LAN, Bluetooth, and sub-microwave applications. A small and thin package of USB8-B6 is adopted.

NJG1667MD7

Abstract: JESD51-5 F10G
Contextual Info: NJG1667MD7 SP5T スイッチ GaAs MMIC • 概要 NJG1667MD7 は移動体通信端末に最適な低挿入損失小型・薄 型を特徴とした SP5T スイッチです。本スイッチ IC は論理回路を 内蔵しており、3 ビットの入力制御信号により 1.3V からの低電圧

H13V

Abstract: h3080 C5103 JESD51-5 NJG1665MD7 F10G
Contextual Info: NJG1665MD7 SP5T スイッチ GaAs MMIC • 概要 NJG1665MD7 は移動体通信端末に最適な低挿入損失小型・薄 型を特徴とした SP5T スイッチです。本スイッチ IC は論理回路を 内蔵しており、3 ビットの入力制御信号により 1.3V からの低電圧

NJG1667MD7

Contextual Info: NJG1667MD7 SP5T スイッチ GaAs MMIC • 概要 NJG1667MD7 は移動体通信端末に最適な低挿入損失小型・薄 型を特徴とした SP5T スイッチです。本スイッチ IC は論理回路を 内蔵しており、3 ビットの入力制御信号により 1.3V からの低電圧

NJG1665MD7

Abstract: MARK P5
Contextual Info: NJG1665MD7 SP5T スイッチ GaAs MMIC • 概要 NJG1665MD7 は移動体通信端末に最適な低挿入損失小型・薄 型を特徴とした SP5T スイッチです。本スイッチ IC は論理回路を 内蔵しており、3 ビットの入力制御信号により 1.3V からの低電圧

GRM36

Abstract: NJG1523KB2 NJG1533KB2
Contextual Info: NJG1533KB2 SPDT SWITCH GaAs MMIC nGENERAL DESCRIPTION NJG1533KB2 is a SPDT switch IC featured low insertion loss, medium handling power and high isolation. This device is suitable for switching of Tx/Rx signals at sub-microwave applications. This switch exhibits wide frequency range from 50MHz to

NJG1533KB2

Abstract: GRM36 NJG1523KB2 NJG1533
Contextual Info: NJG1533KB2 SPDT SWITCH GaAs MMIC nGENERAL DESCRIPTION NJG1533KB2 is a SPDT switch IC featured low insertion loss, medium handling power and high isolation. This device is suitable for switching of Tx/Rx signals at sub-microwave applications. This switch exhibits wide frequency range from 50MHz to

NJG1523KB2

Abstract: GRM36 NJG1533KB2
Contextual Info: NJG1523KB2 SPDT SWITCH GaAs MMIC nGENERAL DESCRIPTION NJG1523KB2 is a SPDT switch IC featured low insertion loss, medium handling power and high isolation. This device is suitable for switching of Tx/Rx signals at sub-microwave applications. This switch exhibits wide frequency range from 50MHz to