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    23B320 Search Results

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    Sensata Technologies JLE-1-1-52-3-B3-200-A-V

    Circuit Breakers Cir Brkr Hyd Mag
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    Mouser Electronics () JLE-1-1-52-3-B3-200-A-V
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    JLE-1-1-52-3-B3-200-A-V
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    KEMET Corporation VS20K123B320AA

    Varistors 420V 12000A 800pF
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    VS20K123B320AA
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    TTI VS20K123B320AA Bulk 5,000
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    23B320 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 32E D • Ô 23b320 O O lb b Q i T H S I P Silicon Switching Diode Array _S I E M E N S / SMBD 7000 SPCL-, SEM ICO N DS _ T ~ -2 3 - g ? • For high-speed sw itching applications • Connected in series C2 ,A 1 Tÿpe M a rk in g O rd e rin g c o d e fo r


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    23b320 T-03-09 23b32Q PDF

    2907A

    Contextual Info: 3SE m D 23b320 00171ÔÔ h * SIP PNP Silicon Switching Transistors PZT 2907;PZT 2907A SIEMENS/ S P C L i SEMICONDS _ -1— 3*7- 1*7 Type Marking Ordering code 12-mm tape Package* PZT 2907 ZT 2907 Q62702- Z2028 SOT-223 PZT 2907A ZT 2907A Q62702• Z2025


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    fl23b320 12-mm Q62702- Z2028 OT-223 Q62702â Z2025 150Hz 200ns 2907A PDF

    Contextual Info: 32E D • ö23b3S0 ' SIPMOS P Channel MOSFET QQ17177 1 « S IP ^ BSS192 SIEMENS/ SPCL-i SEMICONDS_ _ • SIPMOS - enhancement mode • Draln-source voltage Vb» = -240V • Continuous drain current / D = -0.15A • Draln-source on-resistance


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    23b3S0 QQ17177 BSS192 -240V Q62702-S602 23b320 T-37-25 80f/a; PDF

    Contextual Info: 32E D • Ô23b320 OOlbMûb «= H S I P Silicon PIN Diodes SIEMENS/ SPCLi SEMICONDS BAR 60 BAR 61 T - ô l - \S • For RF attenuation • Switching applications for frequencies above 10 MHz TVpe Marking Ordering code tape and reel) Pin configuration Package


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    23b320 2702-A OT-143 23b320 BAR61 PDF

    Contextual Info: 32E I • Ô23fc.320 001707Ô IS IP BSP 60. BSP 62 PNP Silicon Darlington Transistors SIEMENS/ SPCLi SEMICONDS T - 3 3 « • High collector current • Low collector -emitter saturation voltage • Complementary types: BSP 50.BSP 52 NPN ) Marking O rdering co d e (1 2 -m m tape)


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    P1166 OT-223 Q62702 P1168 BSP60 BSP61 BSP62 PDF

    BSS63

    Contextual Info: BEE D • Ô23b320 G G lb704 4 ■ S IP PNP Silicon AF and Switching Transistors BCX 42 BSS 63 SIEMENS/ SPCL-, SEMICONDS T - X 1 '0 7 For general AF applications High breakdown voltage Low collector-emltter saturation voltage Complementary types: BCX 41, BSS 64 NPN


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    23b320 lb704 Q62702-C945 Q62702-S401 Q62702-C1485 Q62702-S534 BSS63 BSS63 PDF

    Contextual Info: 3SE D • flS3t.33Q 0 0 1 7 0 1 ^ S m S I P NPN Silicon RF Transistor T "2 l-f 7 _ SIE M E N S / SPCL-. SEMICONDS _ BFR • For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 to 30 mA. S CECC-type available: CECC 50002/256.


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    BFR93A OT-23 PDF

    Contextual Info: 32E D • fl23b32G GOlbbSO 7 ISIP NPN Silicon AF Transistors SIEMENS/ • • • • SPCL-. BCP 54. BCP 56 SEMI CONDS T- 33-^ 7 For A F driver and output stages High collector current Low collector -emitter saturation voltage Complementary types: BCP51.BCP53 PNP


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    fl23b32G BCP51. BCP53 12-mm Q62702 OT-223 62702-C2119 Q62702 C2120 PDF