BC237
Abstract: transistor bc238 AN 239 IC BC238 datasheet BC239 transistor 239
Contextual Info: BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC239 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Emitter Voltage : BC237 : BC238/239 Collector-Emitter Voltage : BC237 : BC238/239
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bc237/238/239bc239bc237bc238/239+4transistor bc238an 239 icbc238 datasheettransistor 239
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BC237
Abstract: transistor bc237 BC238 NPN transistor transistor 239 BC238 transistor BC238 transistor bc237 bc337 BC239 NPN transistor bc237 transistor BC238 datasheet
Contextual Info: BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC239 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Collector-Emitter Voltage :BC237 BC238/239 Collector-Emitter Voltage :BC237 BC238/239 Emitter-Base Voltage
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bc237/238/239bc239bc237bc238/239+9transistor bc237bc238 npn transistortransistor 239bc238transistor bc238transistor bc237 bc337bc239 npn transistorbc237 transistorbc238 datasheet
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BC237B
Abstract: transistor 238B TRANSISTOR bc237c BC237 238C BC237A transistor TRANSISTOR BC237b transistor bc237 bc337 BC238 238B
Contextual Info: BC237/238/239 BC237/238/239 TRANSISTOR NPN FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TO-92 0.35 W (Tamb=25℃) 1. COLLECTOR 0.1 A 2. BASE 3. EMITTER BC237 50V BC238/239 30V Operating and storage junction temperature range
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bc237/238/239bc237bc238/239100ma+9bc237btransistor 238btransistor bc237c238cbc237a transistortransistor bc237btransistor bc237 bc337bc238238b
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SO-239
Contextual Info: A Black coil only for PO/SO-239 type mounts, 220- Coil and chrome whip for PO/SO-239 type Coil and black whip for PO/SO-239 type mounts, 225 M H z, DC ground mounts, 220-225 M H z, DC ground 220-225 M H z DC ground MODEI FREOUENC ' po 220 bco m-mrn GAIN 3 ft
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TRANSISTOR 237b
Abstract: BC237 237B TRANSISTOR BC237CTA BC238 bc237a 2bc237
Contextual Info: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter
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bc237/238/239bc239bc237bc238/239+6transistor 237b237b transistorbc237ctabc238bc237a2bc237
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TRANSISTOR 237b
Abstract: BC239 NPN transistor BC238 NPN transistor cross reference bc237 BC239CTA transistor BC 458 BC237 transistor bc 238 b
Contextual Info: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter
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bc237/238/239bc239bc237bc238/239+7transistor 237bbc239 npn transistorbc238 npn transistorcross reference bc237bc239ctatransistor bc 458transistor bc 238 b
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BC238
Abstract: BC237 SAT1000 BC238 datasheet BC239
Contextual Info: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter
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bc237/238/239bc239bc237bc238/239+3bc238sat1000bc238 datasheet
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BC237
Abstract: BC238 datasheet BC239
Contextual Info: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter
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bc237/238/239bc239bc237bc238/239+1bc238 datasheet
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bc237
Abstract: BC237B bc238 bc237a bc237c bc239 238B 238c
Contextual Info: BC237/238/239 NPN TO-92 Bipolar Transistors 1. COLLECTOR TO-92 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCEO VEBO Parameter Value BC237 45 BC238/239 25 Collector-Emitter Voltage
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bc237/238/239bc237bc238/239bc238+7bc239100mhzbc237bbc237abc237c238b238c
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BC237
Abstract: BC238 datasheet BC239 BC239 NPN transistor
Contextual Info: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter
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bc237/238/239bc239bc237bc238/239+2bc238 datasheetbc239 npn transistor
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BC238
Abstract: bc238a BC239 NPN transistor BC237
Contextual Info: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter
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bc237/238/239bc239bc237bc238/239+3bc238bc238abc239 npn transistor
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BC238
Abstract: transistor bc237 bc337 BC237 BC239 transistor bc238 Transistor bc239 BC238 NPN transistor
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC237/238/239 SWITCHING AND AMPLIFIER APPLICATIONS TO -92 • LO W NOISE: BC239 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector-E m itter Voltage : BC237 : BC 238/239 C ollector-E m itter Voltage : BC237
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bc237/238/239bc239bc237bc238/239+5bc238transistor bc237 bc337transistor bc238transistor bc239bc238 npn transistor
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BC238 NPN transistor
Abstract: BC237
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC237/238/239 SWITCHING AND AMPLIFIER APPLICATIONS TO -92 . LOW NOISE: BC239 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Symbol C ollector-E m itter Voltage Rating Unit V V V ceS : BC237 : BC238/239 C ollector-E m itter Voltage
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bc237/238/239bc239bc237bc238/239+1bc238 npn transistor
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TRANSISTOR BC 239 F
Abstract: transistor BC 238
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC237/238/239 SWITCHING AND AMPLIFIER APPLICATIONS T O -92 • LO W N OISE: BC239 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage : BC237 : BC 238/239 C ollector-E m itter Voltage : BC237
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bc237/238/239bc239bc237transistor bc 239 f+1transistor bc 238
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bc238
Abstract: S 239 P bc237
Contextual Info: BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • L O W NOISE: BC239 A B S O LU T E MAXIMUM RATINGS TA-2 5 t: C h aracte ristic Rating Sym b o l Collector-Emitter Voltage :BC237 BC238/239 Collector-Emitter Voltage :BC237
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bc237/238/239bc239bc237bc238/239+2bc238s 239 p
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Transistoren DDR
Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
Contextual Info: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60
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sce237sce238sce239sce308+9transistoren ddrvergleichslistetelefunken bux 127aktive elektronische bauelemente ddrbux 127sf 127vergleichsliste ddrbauelemente ddrsf 369
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Sussex Semiconductor
Abstract: rectifier diode piv table 1N647 s16 transistor 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006
Contextual Info: .25 TO 100 AMP STANDARD RECOVERY RECTIFIER DIE SUSSEX SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 TEL: 239 768-6800 FAX: (239) 768-6868 GLASS PASSIVATED STANDARD RECOVERY RECTIFIER DIE REVERSE VOLTAGES - 50 TO 1000 VOLTS
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sussex semiconductorrectifier diode piv table1n647s16 transistor+61n40011n40021n40031n40041n40051n4006
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AK 061
Abstract: Sussex Semiconductor P4KE51A P4KE56 P4KE56A P4KE62 P4KE62A P4KE68 P4KE68A P4KE75
Contextual Info: TM SUSSEX SEMICONDUCTOR, INC. TRANSIENT SUPPRESSOR DIE 7 7 400 TO 5000 WATT UNIPOLAR TRANSIENT SUPPRESSOR DIE SUSSEX SEMICONDUCTOR, INC. 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 TEL: 239 768-6800 FAX: (239) 768-6868 GLASS PASSIVATED UNIPOLAR DIE
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ak 061sussex semiconductorp4ke51ap4ke56+6p4ke56ap4ke62p4ke62ap4ke68p4ke68ap4ke75
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Contextual Info: EPCOS EMC Components and SMT Inductors Introduction Contents Page EMI suppression capacitors X2 capacitors Y1 capacitors Y2 capacitors 239 239 247 248 EMI feed-through capacitors 251 EMI feed-through filters 252 RF chokes SMT inductors SIMID SBC chokes Small Bobbin Core
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b82496b82496-x1b82793b82792+5b82793-x1b84142-ab84143-g-r112b84143-b
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ABS1427
Abstract: QUADRAX ABS0973 ABS0992A01 ASNE0616 P-2806 ABS1340 ESC10SE6 EN2997se souriau 8522-2349A ABS1343
Contextual Info: 8533 Series 239-250_mod:Mise en page 1 24/02/2009 11:15 Page 239 8533 Series Description Applications • Screw coupling • Interchangeable and intermateable with MIL-C 83723 Series III T type • Plug with self locking system • High temperature connector
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elastom0-340abs1427quadrax abs0973abs0992a01+7asne0616p-2806abs1340esc10se6en2997sesouriau 8522-2349aabs1343
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S25400
Abstract: Sussex Semiconductor 100 Amp current 1000 volt diode s16 transistor SE 40 RECTIFIER 1N4001 1N4002 1N4003 1N4004 1N4005
Contextual Info: TM SUSSEX SEMICONDUCTOR, INC. RECTIFIER DIE 7 7 .25 TO 100 AMP STANDARD RECOVERY RECTIFIER DIE SUSSEX SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 TEL: 239 768-6800 FAX: (239) 768-6868 GLASS PASSIVATED STANDARD RECOVERY RECTIFIER DIE
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s25400sussex semiconductor100 amp current 1000 volt diodes16 transistor+6se 40 rectifier1n40011n40021n40031n40041n4005
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2986B
Abstract: 2988B 2999B 10 watt zener diode 2982B 2979B 2976B 2990B 100 watt zener diode 3009B
Contextual Info: .5 TO 100 WATT UNIPOLAR ZENER DIE SUSSEX SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 TEL: 239 768-6800 FAX: (239) 768-6868 GLASS PASSIVATED UNIPOLAR DIE ZENER VOLTAGE - 6.8 TO 200 VOLTS .5 TO 100 WATT MAXIMUM POWER DISSIPATION
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2986b2988b2999b10 watt zener diode+62982b2979b2976b2990b100 watt zener diode3009b
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C3998
Abstract: C3298 c3998 transistor transistor C3298 transistor C3998 C3995 C3295 c3998 transistor smd smd marking code bs 3291 c3998 equivalent
Contextual Info: Crystek Corporation 239-561-3311 FAX 239-561-1025 5.0V 5x7 mm SMD HCMOS/TTL Oscillator with High Load Dimensions inches mm All dimensions are Max unless otherwise specified. .295 Max insert date code as (7.50) per marking specification CC_ANxxx Freq SUGGESTED PAD LAYOUT
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c3292-10000mhzce3292-10100ps+10c3998c3298c3998 transistortransistor c3298transistor c3998c3995c3295c3998 transistor smdsmd marking code bs 3291c3998 equivalent
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10 watt zener diode
Abstract: 1N4190A 1N4181A zener 3 w 1N4158A 1N4166A 1N4172A 1n4192a 1N4164A 1N4160A
Contextual Info: .5 TO 100 WATT UNIPOLAR ZENER DIE SUSSEX SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 TEL: 239 768-6800 FAX: (239) 768-6868 GLASS PASSIVATED UNIPOLAR DIE ZENER VOLTAGE - 6.8 TO 200 VOLTS .5 TO 100 WATT MAXIMUM POWER DISSIPATION
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10 watt zener diode1n4190a1n4181azener 3 w+61n4158a1n4166a1n4172a1n4192a1n4164a1n4160a
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