22JUN2007 Search Results

W02MG

Abstract: DC W005M W04MG W005G W005MG W01G W01MG W02G W04G W06G
Contextual Info: WO.G/WOM.G SERIES VOLTAGE 50V ~ 1000V 1.5AMP Single Phase Bridge Rectifiers Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free WOB WOBM .366 9.3 .350(8.9) .386(9.8) .354(9.0) .220(5.6) .200(5.1) .181(4.6) .150(3.8) 1.1 (27.9) MIN

ST T4 1060

Abstract: K822 JESD97 STK822 Transistor k822
Contextual Info: STK822 N-channel 25V - 0.0015Ω - 38A - PolarPAK STripFET Power MOSFET Preliminary Data Features Type VDSS RDS on RDS(on)*Qg PTOT STK822 25V <0.002Ω 90nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low on resistance

T491A475K010

Contextual Info: TRF3703 www.ti.com SLWS184D – MARCH 2006 – REVISED JUNE 2007 0.4-GHz TO 4-GHz QUADRATURE MODULATOR FEATURES APPLICATIONS • • VCC GND BBIN BBIP GND GND 24 23 22 21 20 19 3 16 RF_OUT LON 4 15 NC GND 5 14 GND NC 6 13 NC 12 LOP GND GND 11 17 GND 2 10 GND

Contextual Info: bq24010, bq24012 bq24013, bq24014, bq24018 www.ti.com SLUS530H – SEPTEMBER 2002 – REVISED JUNE 2007 SINGLE-CHIP, LI-ION CHARGE MANAGEMENT IC FOR HANDHELD APPLICATIONS bqTINY FEATURES • • • • • • • • • • • • • DESCRIPTION

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Preliminary 0603 Package Chip LED 0.6mm Height leadframe 19-013/Y2SC-AQ2R2B/3T Features ․package:SMT package 0603 ․wavelength: 587 nm (Brilliant Yellow) ․viewing angle: extremely wide (140o) ․grouping parameter: luminous intensity, wavelength

akm 4420et

Abstract: bq24012DRCR bq24013 bq24013DRCR bq24014 bq24018 bq24010 bq24010DRCR bq24012 bq24012DRC
Contextual Info: bq24010, bq24012 bq24013, bq24014, bq24018 www.ti.com SLUS530H – SEPTEMBER 2002 – REVISED JUNE 2007 SINGLE-CHIP, LI-ION CHARGE MANAGEMENT IC FOR HANDHELD APPLICATIONS bqTINY FEATURES • • • • • • • • • • • • • DESCRIPTION

SMUN5211DW

Abstract: Digital Transistor SMUN52XXDW SOT-363 marking 05 CHIP TRANSISTOR smun5235dw transistor marking 7D SMUN5214DW "two TRANSISTORs" sot-363
Contextual Info: SMUN52XXDW NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. D C 0.95 12 SPACES AT 4.0 EDGE OF PC BOARD 24 R A SPACES AT 2.0 PCB MPONENT SCALE 2.5:1 D RU A HO REFERENCE APPLICATION AMP 4805 REV 31MAR2000

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet White Chip LED With Right Angle Lens 48-213/T3D-AP1Q2TY/3C Features ˙Package in 8mm tape on 7〞diameter reel. ˙Compatible with automatic placement equipment. ˙Compatible with infrared and vapor phase reflow

B0175

Abstract: IS-136 TRF3703 TRF370315 TRF370333
Contextual Info: TRF3703 www.ti.com SLWS184D – MARCH 2006 – REVISED JUNE 2007 0.4-GHz TO 4-GHz QUADRATURE MODULATOR FEATURES APPLICATIONS • • VCC GND BBIN BBIP GND GND 24 23 22 21 20 19 3 16 RF_OUT LON 4 15 NC GND 5 14 GND NC 6 13 NC 12 LOP GND GND 11 17 GND 2 10 GND

R-4115

Abstract: IS-136 TRF3703 TRF370315 TRF370333
Contextual Info: TRF3703 www.ti.com SLWS184D – MARCH 2006 – REVISED JUNE 2007 0.4-GHz TO 4-GHz QUADRATURE MODULATOR FEATURES APPLICATIONS • • VCC GND BBIN BBIP GND GND 24 23 22 21 20 19 3 16 RF_OUT LON 4 15 NC GND 5 14 GND NC 6 13 NC 12 LOP GND GND 11 17 GND 2 10 GND

K822

Abstract: JESD97 STK822
Contextual Info: STK822 N-channel 25 V - 0.00175 Ω - 38 A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on max RDS(on)*Qg PTOT STK822 25 V <0.00215 Ω 58 nC*mΩ 5.2 W • Ultra low top and bottom junction to case thermal resistance ■ Very low on resistance

K822

Abstract: Transistor k822 JESD97 STK822
Contextual Info: STK822 N-channel 25 V - 0.00175 Ω - 38 A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on max RDS(on)*Qg PTOT STK822 25 V <0.00215 Ω 58 nC*mΩ 5.2 W • Ultra low top and bottom junction to case thermal resistance ■ Very low on resistance

ST T4 1060

Abstract: K822 Transistor k822
Contextual Info: STK822 N-channel 25V - 0.0015Ω - 38A - PolarPAK STripFET Power MOSFET Preliminary Data Features Type VDSS RDS on RDS(on)*Qg PTOT STK822 25V <0.002Ω 90nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low on resistance

AD9977

Abstract: ad9970 AD9972 AD9849 AD9814 AD9848 AD9945 AD9847
Contextual Info: Dual-Channel, 14-Bit, CCD Signal Processor with Precision Timing Core AD9974 FEATURES GENERAL DESCRIPTION 1.8 V analog and digital core supply voltage Correlated double sampler CDS with −3 dB, 0 dB, +3 dB, and +6 dB gain 6 dB to 42 dB, 10-bit variable gain amplifier (VGA)

K820

Abstract: JESD97 STK820
Contextual Info: STK820 N-channel 25V - 0.005Ω - 21A - PolarPAK STripFET Power MOSFET Preliminary Data Features Type VDSS RDS on RDS(on)*Qg PTOT STK820 25V <0.0065Ω 90nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances

Contextual Info: BurrĆBrown Products from Texas Instruments PCM1770, PCM1771 SLES011E – SEPTEMBER 2001 – REVISED MARCH 2007 LOW-VOLTAGE AND LOW-POWER STEREO AUDIO DIGITAL-TO-ANALOG CONVERTER WITH HEADPHONE AMPLIFIER FEATURES APPLICATIONS • • • • • • • •

k822

Contextual Info: STK822 N-channel 25 V - 0.00175 Ω - 38 A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on max RDS(on)*Qg PTOT STK822 25 V <0.00215 Ω 58 nC*mΩ 5.2 W • Ultra low top and bottom junction to case thermal resistance ■ Very low on resistance

Contextual Info: STK820 N-channel 25V - 0.005Ω - 21A - PolarPAK STripFET Power MOSFET Preliminary Data Features Type VDSS RDS on RDS(on)*Qg PTOT STK820 25V <0.0065Ω 90nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances

BSS84_3P

Abstract: bq24721 BCM 4752 VN896 VT8237S 51120GND Inventec VIA_C7-M_1.0G_NANOBGA2_400P Inventec VAIL 2.0 12c885
Contextual Info: Galileo SI BUILD EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV SIZE = 3 FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : GALILEO SIZE CODE A3 DOC. NUMBER REV 000 CS SHEET 1 OF 44 TABLE OF CONTENTS PAGE PAGE 1. COVER PAGE

bq24721

Abstract: VN896 Inventec ics953009 TI_BQ24721C_QFN_32P Inventec VAIL 2.0 74L500 ITE8512E BCM 4752 VAIL 2.0
Contextual Info: Galileo MV BUILD EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV SIZE = 3 FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : GALILEO SIZE CODE A3 DOC. NUMBER REV 000 CS SHEET 1 OF 45 TABLE OF CONTENTS PAGE PAGE 1. COVER PAGE

K820

Abstract: JESD97 STK820
Contextual Info: STK820 N-channel 25 V - 0.0058 Ω - 21 A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK820 25 V <0.0073 Ω 63 nC*mΩ 5.2 W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■

Contextual Info: TLK1221 www.ti.com SLLS713A – FEBRUARY 2007 – REVISED JUNE 2007 ETHERNET TRANSCEIVER FEATURES • • • SYNCEN PRBSEN RXP RXN VDDPLL GNDA VDDA TXP GNDA TXN SYNC 2 29 RD0 TD1 3 28 RD1 TD2 4 27 RD2 TD3 5 26 VDD VDD 6 25 RD3 TD4 7 24 RD4 TD5 8 23 RD5 TD6

Contextual Info: TLK1221 www.ti.com SLLS713A – FEBRUARY 2007 – REVISED JUNE 2007 ETHERNET TRANSCEIVER FEATURES • • • SYNCEN PRBSEN RXP RXN VDDPLL GNDA VDDA TXP GNDA TXN SYNC 2 29 RD0 TD1 3 28 RD1 TD2 4 27 RD2 TD3 5 26 VDD VDD 6 25 RD3 TD4 7 24 RD4 TD5 8 23 RD5 TD6