22DAH Search Results

Contextual Info: A Advance information •■ AS29LV800 3V 1MX8/512KX16 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture—T top or B (bottom)

2216H

Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F
Contextual Info: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are

29LV800

Abstract: TSOP 48 Pattern
Contextual Info: PRELIMINARY MX29LV800T/B & MX29LV800AT/AB FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Extended single - supply voltage range 2.7V to 3.6V • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program

Contextual Info: MCP Multi-Chip Package FLASH MEMORY & SRAM 8M (x 8/x 16) FLASH MEMORY & 1M (x 8) STATIC RAM M B84 VA2006-1o/MB84 VA2007-1o • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature -2 0 to +85°C

MB84VA2002

Abstract: MB84VA2003
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-50105-2E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 8M (x 8/× 16) FLASH MEMORY & 2M (× 8) STATIC RAM MB84VA2002-10/MB84VA2003-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance

29LV800-90

Abstract: 29LV800-70R 29LV8008 AS29LV800
Contextual Info: AS29LV800 March 2001 3V 1M x 8/512K × 16 CMOS Flash EEPROM Features • Organization: 1M×8/512K×16 • Sector architecture - One 16K; two 8K; one 32K; and fifteen 64K byte sectors - One 8K; two 4K; one 16K; and fifteen 32K word sectors - Boot code sector architecture—T top or B (bottom)

29LV8008

Abstract: a6ll AS29LV800T 29LV800-90
Contextual Info: AS29LV800 July 2001 3V 1M x 8/512K × 16 CMOS Flash EEPROM Features • Low power consumption - 200 nA typical automatic sleep mode current - 200 nA typical standby current - 10 mA typical read current • JEDEC standard software, packages and pinouts

Contextual Info: PRELIMINARY MX29LV800CT/CB FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY and erase operation completion. • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion. • Sector protection

Contextual Info: MBM29LV800TA-70/-90 MBM29LV800BA-70/-90 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.

Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

CAPACITOR ELITE

Contextual Info: ESMT F49L800UA/F49L800BA 8 Mbit 1M x 8/512K x 16 3V Only CMOS Flash Memory 1. FEATURES z z Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns Ready/Busy (RY/ BY ) - RY/ BY output pin for detection of program or erase operation completion End of program or erase detection

CAPACITOR ELITE

Contextual Info: ESMT F49L800UA/F49L800BA Operation Temperature Condition -40°C~85°C 8 Mbit 1M x 8/512K x 16 3V Only CMOS Flash Memory 1. FEATURES z z Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns Ready/Busy (RY/ BY ) - RY/ BY output pin for detection of program or erase

29LV800

Contextual Info: MX29LV800T/B & MX29LV800AT/AB FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Extended single - supply voltage range 2.7V to 3.6V • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program

Contextual Info: MX29LV800T/B & MX29LV800AT/AB FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Extended single - supply voltage range 2.7V to 3.6V • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program

Contextual Info: ADVANCE INFORMATION MX29LV081 8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 1,048,576 x 8 • Single power supply operation - 3.0V only operation for read, erase and program

XX01H

Contextual Info: ADVANCE INFORMATION MX29LV400T/B 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 524,288 x 8/262,144 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program

Contextual Info: PRELIMINARY MX29LV800T/B 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program

Contextual Info: ADVANCE INFORMATION MX29LV400T/B 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 524,288 x 8/262,144 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program

KM28U800

Abstract: ba1g KM28U800-T
Contextual Info: Preliminary FLASH MEMORY KM28U800-T/B 8M Bit 1M X8/512K x16 NOR Flash Memory FEATURES GENERAL DESCRIPTION • Single Voltage, 2.7 to 3.6 V tor Read and Write operations • Organization 1,048,576 x 8 bit (Byte mode) / 524,288 x 16 bit (Word mode) • Fast Read Access Time : 90 ns

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-4E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LV800TA-70/90/-12/MBM29LV800BA-70/-90/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

Contextual Info: EFST F49L800UA/F49L800BA 8 Mbit 1M x 8/512K x 16 3V Only CMOS Flash Memory 1. FEATURES Single supply voltage 3.0V-3.6V Fast access time: 70/90 ns 1,048,576x8 / 524,288x16 switchable by BYTE pin Compatible with JEDEC standard - Pin-out, packages and software commands

Contextual Info: ESMT F49L800UA/F49L800BA 8 Mbit 1M x 8/512K x 16 3V Only CMOS Flash Memory 1. FEATURES z z Single supply voltage 3.0V-3.6V Fast access time: 70/90 ns z 1,048,576x8 / 524,288x16 switchable by BYTE pin Compatible with JEDEC standard - Pin-out, packages and software commands