226 RF AMP Search Results

Contextual Info: Amphenol coaxial connectors RF connectors for plenum cables* Plenum Cable Information Cable Number Dims. Cable Imp. RG-6 Plenum \-rrn im rf'm ^ fc * OD .226-232 Belden 82248 FLMR non i7n 89120 (TFE),87120{FLCP), CC .040 89248 (TFE), Times PLF-6 (FEP)

Contextual Info: HMC832LP6GE v01.0812 FRACTIONAL-N PLL WITH INTEGRATED VCO 25 - 3000 MHz PLLS WITH INTEGRATED VCO - SMT Features 1 • RF Bandwidth: 25 - 3000 MHz • Fractional Figure of Merit FOM -226 dBc/Hz • 3.3 V Supply • Exact Frequency Mode with 0 Hz frequency error

Contextual Info: HMC832LP6GE v01.0812 FRACTIONAL-N PLL WITH INTEGRATED VCO 25 - 3000 MHz PLLS WITH INTEGRATED VCO - SMT Features 1 • RF Bandwidth: 25 - 3000 MHz • Fractional Figure of Merit FOM -226 dBc/Hz • 3.3 V Supply • Exact Frequency Mode with 0 Hz frequency error

Contextual Info: HMC832LP6GE v02.0413 FRACTIONAL-N PLL WITH INTEGRATED VCO 25 - 3000 MHz PLLS WITH INTEGRATED VCO - SMT Features 1 • RF Bandwidth: 25 - 3000 MHz • Fractional Figure of Merit FOM -226 dBc/Hz • 3.3 V Supply • Exact Frequency Mode with 0 Hz frequency error

Contextual Info: HMC832LP6GE v04.0713 FRACTIONAL-N PLL WITH INTEGRATED VCO 25 - 3000 MHz PLLS WITH INTEGRATED VCO - SMT Features 1 • RF Bandwidth: 25 - 3000 MHz • Fractional Figure of Merit FOM -226 dBc/Hz • 3.3 V Supply • Exact Frequency Mode with 0 Hz frequency error

HMC832LP6GE

Abstract: HMC832 HMC1060LP3 hmc1060 HMC1060LP3E 34410A Hittite 539 WIFI data transmitter and receiver X103A SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER
Contextual Info: HMC832LP6GE v00.0812 FRACTIONAL-N PLL WITH INTEGRATED VCO 25 - 3000 MHz PLLS WITH INTEGRATED VCO - SMT Features 1 • RF Bandwidth: 25 - 3000 MHz • Fractional Figure of Merit FOM -226 dBc/Hz • 3.3 V Supply • Exact Frequency Mode with 0 Hz frequency error

Contextual Info: HMC832LP6GE v05.0614 FRACTIONAL-N PLL WITH INTEGRATED VCO 25 - 3000 MHz PLLs with integrated vco - SMT Features 1 • RF Bandwidth: 25 - 3000 MHz • Fractional Figure of Merit FOM -226 dBc/Hz • 3.3 V Supply • Exact Frequency Mode with 0 Hz frequency error

Contextual Info: RF Amplifier Model TM5519 +5 Volt Operation 5 to 500 MHz see Appendix SPECTRUM MICROWAVE • 2144 Franklin Drive N.E. • Palm Bay, Florida 32905 • Phone: (888) 553-7531 • Fax: (888) 553-7532 226 www.specwave.com SPECTRUM CONTROL GmbH • Hansastrasse 6 • 91126 Schwabach, Germany • Phone: (49)-9122-795-0 • Fax: (49)-9122-795-58

capacitor 226 35K

Abstract: 105 35K capacitor 226 35K capacitor capacitor 104 Z30 electrolytic capacitor 226 35k capacitor 104 35k
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.

226 35K

Abstract: 226 35K capacitor capacitor 226 35K electrolytic capacitor 226 35k 226 35K 649 226 35K 750 gps-500 105 35K capacitor R 226 35k
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

226 35K capacitor

Abstract: capacitor 226 35K R 226 35k
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

226 35K capacitor

Abstract: capacitor 226 35K C40 Sprague 105 35K capacitor R 226 35k
Contextual Info: Freescale Semiconductor Technical Data Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

c38 transistor

Contextual Info: Freescale Semiconductor Technical Data MRF21120 Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

226 35K

Abstract: capacitor 226 35K capacitor 226 35K 022 electrolytic 105 35K capacitor 226 35K capacitor datasheet gps m 89 pin configuration 105 35K capacitor datasheet 226 35K capacitor marking us capacitor pf l1 MRF21120
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

226 35K capacitor

Contextual Info: Freescale Semiconductor Technical Data MRF21120 Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

226 35K

Abstract: 105 35K capacitor capacitor 226 35K 022 electrolytic MRF21120 MRF21120R6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

tfk u 226 b

Abstract: tfk 226 tfk 723 STRA 226
Contextual Info: Q a v a n tek TFK -2 62 1 M Thin-Film Mixer 2 to 26 G H z Double Balanced FEATURES APPLICATIONS All Thin-Film Ceramic Construction 2.0 to 26.0 GHz RF and LO Bandwidth DC to 500 MHz IF Bandwidth 7 dB Conversion Loss Low V SW R s All Ports Excellent Phase and Amplitude

LMA208C

Contextual Info: 2-26 GHz PHEMT Amplifier Filtronic LMA208C Solid State Features • • • • • • • • 9dB Typical Gain 18dBm 1-dB Gain Compression Power 15dB Input/Output Return Loss Typical 2-26GHz Frequency Bandwidth DC Decoupled RF Input and Output Chip Size : 1.986mmX1.082mm .078”X.043”

2090-6203-00

Abstract: 2090-6204-00
Contextual Info: C O A X IA L P O W E R D IV ID E R S TWO-WAY • ISO LATED T A P ER E D STRIPUIME DESIGN • • • • • • • Octave, Multi-Octave And Decade Frequency Coverage Low Insertion Loss Excellent Amplitude And Phase Balance High Isolation Between Output Ports

Contextual Info: QB H -854 Amplifier P erform ance Specifications Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA) DC Voltage (V) Gain vs. Vdc (dB/V)

BH 1060

Contextual Info: Q BH -4012 Amplifier P erform ance Specifications Min/Max +25 °C Specifications Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA)

Transistor BC 227

Abstract: TRANSISTOR BC 206 transistor BC 246 re 10019 transistor bc 207
Contextual Info: WJ-A24 / SMA24 5 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH GAIN - TWO STAGES: 20.0 dB TYP. ♦ ULTRA LOW PHASE DEVIATION FROM LINEARITY: < ±2.5°, 100-1500 MHz ♦ LOW VSWR: <1.4:1 (TYP.) ♦ MEDIUM LEVEL OUTPUT: +8 dBm (TYP.)

WJA24

Abstract: WJ-A24
Contextual Info: uuU A24 / SMA24 5 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH GAIN - TWO STAGES: 20.0 dB TYP. ♦ ULTRA LOW PHASE DEVIATION FROM LINEARITY: < ±2.5°, 100-1500 MHz ♦ LOW VSWR: <1.4:1 (TYP.) ♦ MEDIUM LEVEL OUTPUT: +8 dBm (TYP.)

Contextual Info: Whpì HEWLETT XL'rtà PACKARD HI-REL GaAs MMIC Amplifiers Technical Data Features • MIL-STD-883 Equivalent • Broad Bandwidth: 2-26 GHz • High PMÿ 19 dBm at 22 GHz; 15 DBm at 26.5 GHz • 100% RF Tested: -55°C, 125?C • Gain Control: 30 dB Range • Low VSWR: <1.5:1