2208 RESISTOR Search Results

XR2208CP

Abstract: XR-2208 XR-2208CP cir 2272 XR-2208 CIRCUIT XR2208M applications xR-2208 2208CP application for xr-2208 XR2208P
Contextual Info: XR-2208 Operational Multiplier GENERAL DESCRIPTION PIN ASSIGNMENT The XR-2208 operational multiplier combines a fourquadrant analog multiplier or modulator , a high fre­ quency buffer amplifier, and an operational amplifier in a monolithic circuit that is ideally suited for both analog

XR2208CP

Abstract: applications xR-2208 XR-2208 XR-2208CP XR2208M XR2208CN XR2208P XR-2208P
Contextual Info: J T E X A XR-2208 R Operational Multiplier GENERAL DESCRIPTION The XR-2208 operational multiplier combines a fourquadrant analog multiplier or modulator , a high fre­ quency buffer amplifier, and an operational amplifier in a monolithic circuit that is ideally suited for both analog

MIL-PRF-55342

Contextual Info: 2208 Thin Film Chip Resistor Standard Grade, Surface Mount, Solderable PROTECTIVE ENCAPSULANT FEATURES PRECISION THIN FILM RESISTOR 99.6% ALUMINA CHIP WRAPAROUND TERMINATIONS PRETINNED PERFORMANCE CHARACTERISTICS Resistance Range 1 Tolerances (2) Maximum Power

Contextual Info: M55342/05 Thin Film Chip Resistor 2208 Size, Surface Mount, Solderable PROTECTIVE ENCAPSULANT FEATURES PRECISION THIN FILM RESISTOR 99.6% ALUMINA CHIP WRAPAROUND TERMINATIONS PRETINNED • Tolerances to ± 0.1% • Operating temperature range : -55° C to +150° C

2208CP

Contextual Info: GLASS PASSIVATION 2208 Thick Film Chip Resistor Standard Grade, Wraparound WRAPAROUND TERMINATIONS RESISTOR FILM 96% ALUMINA CHIP PERFORMANCE CHARACTERISTICS 1W-40MW 0.5%,1%, 2%, 5%,10% ±100, ±200, ±300 72.7°C/W 750 mW 175 Volts 1 +/- 0.5% limited availability

100MHz SMD RF Mixer

Abstract: RF mixer 920 Mhz gilbert cell differential pair siemens capacitors Siemens A 1458 4GHZ FM MODULATOR 5GHz RF mixer B 647 AC transistor direct pm modulation circuit DCS1800
Contextual Info: ICs for Communications Mixer and IF Vector Modulator PMB 2208 Version 1.2 Preliminary Specification 10.97 Edition 10.97 Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, Balanstraße 73, 81541 München Siemens AG 1995. All Rights Reserved.

Contextual Info: M55342/05 Thick Film Chip Resistor 2208 Size, Surface Mount, Solderable FEATURES GLASS PASSIVATION RESISTOR FILM 96% ALUMINA CHIP WRAPAROUND TERMINATIONS PRETINNED • Tolerances to ±1% • Operating temperature range : -55° C to +150° C • Pretinned Sn60 nickel barrier

Contextual Info: PROTECTIVE ENCAPSULANT 2208 Thin Film Chip Resistor WRAPAROUND TERMINATIONS Standard Grade, Wraparound PRECISION THIN FILM 99.6% ALUMINA PERFORMANCE CHARACTERISTICS 5.6W- 2.2MW 0.1%, 0.25%, 0.5%,1%, 2%, 5% ±25, ±50, ±100 ppm 87.8°C/W 750 mW 175 Volts CURRENT NOISE

DCS1800

Abstract: PMB2208 219CC
Contextual Info: Wireless Components Mixer and IF Vector Modulator PMB 2208 Version V1.2 Specification August 1999 preliminary CONFIDENTIAL Revision History: Current Version: 08.99 Previous Version:Data Sheet Page in previous Version Page (in current Version) Subjects (major changes since last revision)

Contextual Info: 2208 Thick Film Chip Resistor Standard Grade, Surface Mount, Solderable GLASS PASSIVATION FEATURES RESISTOR FILM 96% ALUMINA CHIP WRAPAROUND TERMINATIONS PRETINNED • Tolerances to ± 0.5% • Operating temperature range : -55° C to +150° C • Pretinned Sn60 nickel barrier

led matrix 16X16

Abstract: MAX4355 MAX4355ECQ Nippon capacitors
Contextual Info: 19-2208; Rev 0; 10/01 16 x 16 Nonblocking Video Crosspoint Switch with I/O Buffers Applications Features ♦ 16 ✕ 16 Nonblocking Matrix with Buffered Inputs and Outputs ♦ Operates from ±3V, ±5V, or +5V Supplies ♦ Individually Programmable Output Buffer Gain

Nippon capacitors

Contextual Info: 19-2208; Rev 0; 10/01 16 x 16 Nonblocking Video Crosspoint Switch with I/O Buffers Applications Features ♦ 16 ✕ 16 Nonblocking Matrix with Buffered Inputs and Outputs ♦ Operates from ±3V, ±5V, or +5V Supplies ♦ Individually Programmable Output Buffer Gain

Contextual Info: SIEMENS Mixer and IF Vector Modulator PMB 2208 B ipolarIC Version 1.2 1 Overview 1.1 Features • Direct quadrature modulator and up/downconversion mixer on one chip • Modulator: LO input frequency range from 200MHz to 550MHz corresponds to an output frequency

Nippon capacitors

Contextual Info: 19-2208; Rev 0; 10/01 16 x 16 Nonblocking Video Crosspoint Switch with I/O Buffers Applications Features ♦ 16 ✕ 16 Nonblocking Matrix with Buffered Inputs and Outputs ♦ Operates from ±3V, ±5V, or +5V Supplies ♦ Individually Programmable Output Buffer Gain

r03003

Abstract: MPS-202201-71 MPS-202201 mps2022
Contextual Info: MPS-202201 -71 100 TO 2000 MHz GaAs FET AMPLIFIER 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 MICROWAVE TECHNOLOGY !•—H 098 FEATURES -1 -n*> a5 25 I I I / “ 2- PL +34 dBm TYPICAL IP3 +22 dBm TYPICAL P1dB (654)

Contextual Info: PRELIMINARY MPS-252708-85 1.7 TO 2.5 GHz SELF-BIASED GaAs FET AMPLIFIER MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +41 dBm TYPICAL IP3 +27.5 dBm TYPICAL P1dB 11.5 dB TYPICAL GAIN +12 VOLT OPERATION HIGH POWER ADDED EFFICIENCY

Contextual Info: MwT-13 18GHz HIGH POWER GaAs MESFETCHIP MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +27 dBm P-1 dB AT 12 GHz • 7 dB GAIN AT 12 GHz • HIGH THIRD ORDER INTERCEPT • IDEAL FOR BALANCED AMPLIFIER CIRCUITS

mps2027

Abstract: MPS-202708-85
Contextual Info: PRELIMINARY MPS-202708-85 500 TO 2000 MHz SELF-BIASED GaAs FET AMPLIFIER MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +39 dBm TYPICAL IP3 • +27.0 dBm TYPICAL P1dB • 10.5 dB TYPICAL GAIN • +12 VOLT OPERATION

Contextual Info: PRELIMINARY MPS-202708-85 500 TO 2000 MHz SELF-BIASED GaAs FET AMPLIFIER MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +39 dBm TYPICAL IP3 • +27.0 dBm TYPICAL P1dB • 10.5 dB TYPICAL GAIN • +12 VOLT OPERATION

XR-2211 IC

Abstract: application for xr-2208 XR-2211 application XR-2208 applications xR-2208 XR-2208 CIRCUIT XR-2211 pll xr2208 XR-2211 sine wave SCHEMATIC
Contextual Info: £*EX4R Application Note AN-11 A Universal Sine Wave Converter Using the XR-2208 and the XR-2211 INTRODUCTION sine converter is then applied to a variable-gain amplifier which sets the desired output amplitude. Since the oscillator section of the PLL is always running, the circuit also

RO3003

Abstract: mps2024
Contextual Info: MPS-202409-85 500 TO 2000 MHz SELF-BIASED GaAs FET AMPLIFIER 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 MICROWAVE TECHNOLOGY oeo_| D im ensions in inches FEATURES 1-52 and (mm) INPUT'* • +36 dBm TYPICAL IP3 IT • +24 dBm TYPICAL P1dB

Contextual Info: PRELIMINARY MPS-252708-85 1.7 TO 2.5 GHz SELF-BIASED GaAs FET AMPLIFIER 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 MICROWAVE TECHNOLOGY D frn « n*lo n * n incfte» oeo ^ 52j FEATURES ] and mm INPUT- • +41 dBm TYPICAL IP3 • +27.5 dBm TYPICAL P1dB

Contextual Info: MwT-102 2-18 GHz MMIC AMPLIFIER CHIP MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 • 25 dB TYPICAL REVERSE ISOLATION • ±0.75 dB TYPICAL OUTPUT POWER FLATNESS • 7.5 mA/dB TYPICAL GAIN EFFICIENCY • -16 dBe TYPICAL SECOND HARMONICS AT Psat

Contextual Info: MwT-101 2-8 GHz MMIC AMPLIFIER CHIP MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 30 dB TYPICAL REVERSE ISOLATION • 40.6 dB TYPICAL OUTPUT POWER FLATNESS • 3 mA/dB TYPICAL GAIN EFFICIENCY • -16 dBc TYPICAL SECOND HARMONICS AT Psat