22 NF CAPACITOR Search Results

B37988G5105M54

Contextual Info: Radial-Leaded Capacitors Z5U/Y5V Z5U/Y5V Lead spacing Type 2,5 mm B37982-N VR Vdc 10 15 22 33 47 68 100 150 220 330 470 680 1,0 1,5 2,2 3,3 4,7 5,0 mm B37988-N 50 50 B37982-G 50 B37988-G 50 B37985-N 50 nF nF nF nF nF nF nF nF nF nF nF nF µF µF µF µF

LCR polypropylene Capacitors

Abstract: LCR Capacitors 2000v mkc 55 PRECISION cAPACITORS polystyrene capacitors LCR polypropylene Capacitors dc 55-085-56 630V FSC 160V
Contextual Info: Precision Capacitors LCR TYPE FPC FSC FSC/EX FPC/EX MKC/R MKC/PC RATED DC VOLTAGE AC 160 - 630 VDC 30 - 630 VDC 63 - 630 VDC 63 - 630 VDC 63 - 400 VDC 63 - 400 VDC CAPACITANCE RANGE 1 - 150 nF 25 pF - 200 nF 47 pF - 100 nF 47 pF - 100 nF 0.01 - 22 µF 0.01 - 22 µF

Contextual Info: V i s h ay Int e rt e c h nology, Inc . ceramic capacitors Single-layer Capacitors AC Rated Ceramic Disc Capacitors Product Family Voltage Capacitance Tolerance Class Temperature Characteristics - 9.0 nF to 100 nF ± 20 % 2 Y5V Z5U 275 VAC - 4.7 nF to 22 nF

Contextual Info: Disc Ceramic Capacitors General Purpose - Class III Performance Characteristics Measured at Dissipation Factor Capacitance Tolerance Ø = 0.6 ± 0.1 0.024 (0.004) 1.0 kHz / 0.1 Vef / 25ºC CR ≤ 22 nF → Y5V, Y5U ≤ 7.5% CR > 22 nF → Y5V, Y5P ≤ 5.0%

MD735L

Abstract: 502a 355B EL lamp low voltage clf circuit MD735L502A diode MARKING CODE 917 DS1608BL 2N3906 BAS21LT1
Contextual Info: Typical Output Waveform Load B* 47 nF 22 nF 100Ω 10kΩ * Load B approximates a 5in2 EL lamp. Absolute Maximum Ratings Parameter Supply voltage Operating range Withstand range Enable Voltage Output Voltage CLF Voltage Operating temperature Storage temperature

switching power supply design

Abstract: ridley 0411A BAT54A LM5642 Si4840DY Si4850EY mq1100 12 volt 200 Amp PWM 0002am
Contextual Info: SWITCHING POWER SUPPLY DESIGN: PWM CURRENT MODE DUAL SYNCHRONOUS BUCK CONVERTER: LM5642 Rev: 20 August 2004 Michele Sclocchi michele.sclocchi@nsc.com National Semiconductor C2 10 nF VIN 22 C1 ILIM1 VIN KS1 1 µF 6 C34 SYN CR 220 kΩ 100 nF 5 28 9 S1 C11 UV_DELAY

0334

Contextual Info: Suppressor Capacitors Ordering Code HOW TO ORDER QX Series - Polyester Example: 330 nF - 275 Vac 20% QX Type 22 Size Pitch 10 mm Pitch 15 mm Pitch 22.5 mm Pitch 27.5 mm 4 H 0334 Suffix – –: Bulk with lead length 6 mm EN: Taped on reel Capacitance EIA Code

nf 742

Abstract: 680/nf 742
Contextual Info: Ceramic Capacitors Leaded multilayer, Mono-axial series Dielectric Series 2222 . . Rated DC voltage Capacitance range pF/nF NPO X7R Z5U 740 . 50 V 741 . 50 V 742 . 50 V 10 pF 12 15 18 22 27 33 39 47 56 68 82 100 120 150 180 220 270 330

A 5 GHz 0.95 dB NF Highly Linear Cascode Floating-Body LNA in 180 nm SOI CMOS Technology

Contextual Info: 200 IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 22, NO. 4, APRIL 2012 A 5 GHz 0.95 dB NF Highly Linear Cascode Floating-Body LNA in 180 nm SOI CMOS Technology Anuj Madan, Member, IEEE, Michael J. McPartlin, Member, IEEE, Christophe Masse, William Vaillancourt, and

ADF4159

Contextual Info: 4-Channel, 24 GHz, Receiver Downconverter ADF5904 Data Sheet FEATURES GENERAL DESCRIPTION Integrated baluns for single-ended receiver Rx inputs and local oscillator (LO) input Rx channel gain: 22 dB Noise figure (NF): 10 dB P1dB: −10 dBm LO input range: −8 dBm to +5 dBm

60Ghz

Abstract: FMM5716X ED-4701
Contextual Info: FMM5716X 60GHz Low Noise Amplifier FEATURES •Low Noise Figure :NF = 5 dB Typ. @ f = 60 GHz •High Associated Gain: |S21| = 22 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5716X is a low noise amplifier MMIC designed for

Contextual Info: FMM5716X 60GHz Low Noise Amplifier FEATURES •Low Noise Figure :NF = 5 dB Typ. @ f = 60 GHz •High Associated Gain: |S21| = 22 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5716X is a low noise amplifier MMIC designed for

MD58-0005

Contextual Info: Preliminary Specifications Integrated Transceiver 2.1 - 2.7 GHz MD58-0005 V1.A Features ● ● ● ● ● ● ● ● ● SSOP-28 Fully Integrated Transmit and Receive Functions Operates Over +3 V to +5 V Supply Low 22 mA Receive Current Gain = 15 dB High Receiver Dynamic Range (IIP3 = -2 dBm, SSB NF = 4dB)

philips ceramic capacitors

Abstract: Philips z5u ceramic axial capacitors philips PA06-A
Contextual Info: Leaded Ceramic Multilayer Capacitors Mono-axial Series NPO, X7R, Z5U, Y5V NPO 10 b F . 15 22 33 47 68 It» 120 150 180 220 270 330 390 470 560 680 820 1.0 nF 1.2 1.5 1.8 2.2 2.7 3,3 3.9 4.7 100V 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 20

BB502M

Abstract: Hitachi DSA00398
Contextual Info: BB502M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-809B Z 3rd. Edition Jun. 1999 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz

TSE 151

Abstract: BB502C DSA003644
Contextual Info: BB502C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-810C Z 4th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz

811b transistor

Abstract: BB503M Hitachi DSA00395
Contextual Info: BB503M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-811B Z 3rd. Edition Jul. 1999 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz

BB503C

Abstract: DSA003644
Contextual Info: BB503C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-812C Z 4th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz

BB502M

Abstract: DSA003644
Contextual Info: BB502M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-809C Z 4th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz

vishay 1206 SMD resistors

Abstract: SMD array resistors "Resistor array" MELF SMD SMD resistors optocoupler smd 4 pin smd optocoupler diode melf smd optocoupler smd ARRAY resistor
Contextual Info: ID 1 2 3 4 STEVAL-IFP008V1 BOM Reference C1, C2, C3, C4 J1, J2 LED1, LED2, LED3, LED4 LED1o, LED2o, LED3o, LED4o Value 22 nF/50 V 6 pin 5 Rin1, Rin2, Rin3, Rin4 1k8/300 V 6 7 8 9 4k7/300 V 330R CLT3-4BT6 TLP281-4 Rc RN1 U1* U2 * Supplier: STMicroelectronics

marking r4 SOT343

Abstract: BGA427
Contextual Info: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3
Cascadable 50 -gain block 4
Unconditionally stable
Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1
Noise figure NF = 2.2 dB at 1.8 GHz

marking r4 SOT343

Abstract: bo 139 INFINEON marking BGA BGA420 BGA427 E6327 nf 948
Contextual Info: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3
Cascadable 50 -gain block 4
Unconditionally stable
Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1
Noise figure NF = 2.2 dB at 1.8 GHz

Contextual Info: TCN 201 à/to 204 TCN 252 à/to 254 CONDENSATEURS CERAMIQUE MOULES CLASSE 2 0,6 0,8 URC V 100 10 pF 12 15 18 22 27 33 39 47 56 68 82 100 120 150 180 220 270 330 390 470 560 680 820 1000 1200 1500 1800 2200 2700 3300 3900 4700 5600 6800 8200 10 nF 12 15 18

transistor marking BMs

Contextual Info: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3
Cascadable 50 -gain block 4
Unconditionally stable
Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1
Noise figure NF = 2.2 dB at 1.8 GHz