21F2C Search Results

Contextual Info: GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 Unit: mm HIGH POWER SWITCHING APPLICATIONS l Enhancement−Mode l High Speed : tf = 0.4 µs Max. (IC = 40 A) l Low Saturation : VCE (sat) = 5.0 V (Max.) (IC = 40 A) MAXIMUM RATINGS (Ta = 25°C)

GT50J301

Abstract: bipolar power transistor data toshiba set igbt on off Vge
Contextual Info: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)

GT60M303

Abstract: GT60M303 application GT60M303 circuit
Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 4th Generation FRD Included Between Emitter and Collector Enhancement−Mode High Speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)

GT50J322

Contextual Info: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT50J322 Unit: mm THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.25µs Typ. (IC = 50A)

gt50j322

Contextual Info: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 Unit: mm FOURTH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD included between emitter and collector Enhancement mode type High speed : tf = 0.25µs Typ. (IC = 50A)

GT50J301

Contextual Info: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. Low saturation voltage : VCE (sat) = 2.7V (Max.)

GT60M303

Abstract: GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303
Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)

gt50j102

Contextual Info: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd. Generation. Enhancement−Mode. High Speed. : tf = 0.30µs Max. Low Saturation Voltage. : VCE(sat) = 2.7V (Max.)

GT40M301

Contextual Info: GT40M301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40M301 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 3rd Generation FRD Included Between Emitter and Collector Enhancement−Mode High Speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)

gt50j102

Contextual Info: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS l The 3rd. Generation. l Enhancement−Mode. l High Speed. : tf = 0.30µs Max. l Low Saturation Voltage.

Contextual Info: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS l The 3rd Generation l Enhancement−Mode l High Speed : tf = 0.30µs Max. l Low Saturation Voltage : VCE (sat) = 2.7V (Max.)

GT40M301

Contextual Info: GT40M301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40M301 Unit: mm HIGH POWER SWITCHING APPLICATIONS l The 3rd Generation l FRD Included Between Emitter and Collector l Enhancement−Mode l High Speed IGBT : tf = 0.25µs TYP.

gt50j102

Abstract: 2-21f2c
Contextual Info: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd. Generation. Enhancement−Mode. High Speed. : tf = 0.30µs Max. Low Saturation Voltage. : VCE(sat) = 2.7V (Max.)

gt40t101

Abstract: bipolar power transistor data toshiba 2-21F2C
Contextual Info: GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 Unit: mm HIGH POWER SWITCHING APPLICATIONS Enhancement−Mode High Speed : tf = 0.4 µs Max. (IC = 40 A) Low Saturation : VCE (sat) = 5.0 V (Max.) (IC = 40 A) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)

F2B transistor

Abstract: 3p transistor transistor TO-3P Outline Dimensions transistor 975 transistor 545
Contextual Info: Transistor Outline Package TO-3P LH Package Outline Dimensions Outline Dimensions Unit: mm 20.5 max 1.0 +0.3 –0.25 26.0 ±0.5 2.0 1.5 3.0 20.0 ±0.6 2.5 2.5 1.5 11.0 2.0 4.0 6.0 φ3.3 ±0.2 1 (Bottom view) Toshiba package name Toshiba package code Notes

GT60M303

Abstract: TOSHIBA IGBT GT60M303 GT60M303 application gt60m303 application notes 2-21F2C
Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 4th Generation FRD Included Between Emitter and Collector Enhancement−Mode High Speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)

gt40t101

Abstract: 030619EAA
Contextual Info: GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 Unit: mm HIGH POWER SWITCHING APPLICATIONS Enhancement mode type High speed : tf = 0.4 µs Max. (IC = 40 A) Low saturation : VCE (sat) = 5.0 V (Max.) (IC = 40 A) MAXIMUM RATINGS (Ta = 25°C)

GT50J322

Contextual Info: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 Unit: mm THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.25µs Typ. (IC = 50A)