2193 T Search Results

EIA-364-8

Abstract: EIA-364-6 receiving inspection procedure EIA-364-28 EIA-364-18 EIA-364-26 EIA-364-32 MIL-W-22759 EIA-364-26 condition b
Contextual Info: Product Specification 108-2193 22Mar07 Rev B STRAO-THERM* Un-Insulated, No-Insulation Support, Heat Resistant Terminals 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for nickel plated STRATO-THERM* un-insulated, no-insulation support, heat resistant terminals. Terminals covered by

Contextual Info: This document was generated on 02/22/2013 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 22-28-2193 Active KK Interconnection System 2.54mm Pitch KK® Header, Breakaway, Right Angle, with Plastic Polarizing Peg, 19

tlk 94

Abstract: 2N2193 High Speed Switches C4752 tfk s 220
Contextual Info: 4M> Nicht für Neuentwicklungen Not for new developments 2 N 2193 'W Silizium-NPN-Epitaxial-Pianar-Schalttransistor Silicon NPN Epitaxial Planar Switching Transistor Anwendungen: HF-Verstärker und schnelle Schalter Applications: RF am plifiers and high speed switches

TM40-24

Abstract: Drawing anvil crimp lg power supply TM-40
Contextual Info: T-Style Terminator for Push-On Crimp Terminals T-Style Terminator Tooling Specification Sheet Part No. 11-40-2193 T8379B FEATURES ΠΠΠΠIt is ideally suited for mid-volume bench operations This terminator can be installed in the TM42 and Base Unit adapter for 3BF press

Contextual Info: Ordering number : ENN6943 P-Channel Silicon MOSFET MCH6305 Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. Package Dimensions unit : mm 2193 [MCH6305] 0 . 15 . floiLiin UM 2LJ3U 0.65 1 2

Contextual Info: Ordering number : ENN6780 N-Channel Silicon MOSFET MCH6403 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching. • 2.5V drive. 2193 [MCH6403] 0.15. 0.3, o J2L J s U 0.65 Drain Drain

ps2 CIRCUIT diagram

Abstract: hd102 167 1 CMT54 HD12D TCA 785 IC ta222 TA023 CMT57 Hitachi DSA002714 HD100
Contextual Info: Hitachi Single-Chip Microcomputer H8S/2194 Series, H8S/2194F-ZTAT H8S/2194, HD6432194, HD64F2194, H8S/2193, HD6432193 H8S/2192, HD6432192 H8S/2191, HD6432191 Hardware Manual ADE-602-160 Ver 0.1 11/20/98 Hitachi, Ltd. Notice When using this document, keep the following in mind:

2N2192

Abstract: 2N2193A 2N2193 2N2192A 2193A SCHEMA VTP2N 2192 2193 t 2n 2192
Contextual Info: 2N2192, A 2N2193, A NPN SILICON TRANSISTORS, EPITAXIAL TRANSISTORS NPN SILIC IU M , EP IT A X I A UX - LF large signal amplification i 40 V 2N 2192,A 1 50 V 2N 2193,A A m plification BF grands signaux V CEO * Medium current switching Commutation à moyen gourant

CTL3010-002

Abstract: stratotherm 323180 323169 CTL3066002 stratotherm terminal block test qualification
Contextual Info: 501-600 Qualification Test Report 22Mar07 Rev A STRATO-THERM* Un-Insulated, No-Insulation Support, Heat Resistant Terminals 1. INTRODUCTION 1.1. Purpose Testing was performed on STRATO-THERM* un-insulated, no-insulation support, heat resistant terminals to determine their conformance to the requirements of Product Specification 108-2193

ps2 CIRCUIT diagram

Abstract: TCA 965 BP CMT58 CMT57 Hitachi DSA002730 k 1413
Contextual Info: Hitachi 16-Bit Single-Chip Microcomputer H8S/2194 Series, H8S/2194C Series, H8S/2194 F-ZTAT , H8S/2194C F-ZTAT™ H8S/2194, HD6432194, HD64F2194, H8S/2193, HD6432193 H8S/2192, HD6432192 H8S/2191, HD6432191 H8S/2194C, HD6432194C, HD64F2194C, H8S/2194B, HD6432194B

Contextual Info: Ordering num ber: ENN6779~j N-Channel Silicon MOSFET MCH6401 Ultrahigh-Speed Switching Applications Package Dimensions Features • L o w ON-resistance. unit : mm • Ultrahigh-speed switching. 2193 • 2.5 V drive. [MCH6401] 0.3. 0. 15. 6n5 rfi4 n _t -

TT 2206

Abstract: tt 2194 TT 2188 2SC3008-KA TT 2206 sanyo 2sc2103a TT 2190 2SC2106 2SC2196 sl 2172
Contextual Info: - 132 - tt m % Type No. 2SC 2172 2SC 2173 2SC 2176 2SC 2177 2SC 2178 X 2SC 2180 2SC 2181 2SC 2182 2SC 2183 2SC 2186 2SC 2188 / 2SC 2189#' 2SC 2190 2SC 2191 2SC 2192 2SC 2193 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC SANYO M S TOSHIBA m s NEC SL HITACHI a S. S M dr il

2193 t

Contextual Info: YXF M IN IATU RE ALUM INUM E L E C T R O L Y T I C C A P A C IT O R S YXF S / U - X SERIES 105°C S M I& 'f > t ° - ^ > X B np 105°C Long Life. Low impedance. ♦¡f# ft FEATURES • 105°C 4OOO~7OOO0$PBEH £liE1£ Load Life : 105°C 4000~7000hours Low impedance at 100kHz with selected materials.

Contextual Info: Engineering Development Model Frequency Mixer JMS-ED5689/2 Level 7 LO Power +7 dBm Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a

Contextual Info: QSFCT193T, 2193T Q QS54/74FCT193T High Speed CMOS Presettable Synchronous 4-Bit Binary Counters QS54/74FCT2193T FEATURES/BENEFITS TTL-compatible input and output levels Ground bounce controlled outputs Reduced output swing of 0-3.5V Military product compliant to MIL-STD-883

TRANSISTOR BC 313

Abstract: 2n 3019 transistor 2N 2905a pnp transistor transistor 2N 3020 BSW21 2N 2222 2221-2N 2N2243 BC211 2N2195
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic 12 V PNP NPN 0,6.0,8 A < 0 ,2 A vC E O ^ \^ IS V

tt 2194

Abstract: LTLS 2n3054 2N5415 2N2243 aa2n BUX54 2N2192 2N2195 2N5416
Contextual Info: metal power transistors O transistors de puissance métalliques Type v CEO •c h21E P to t ! Ic THOMSON-CSF VCE sat 11 / Ib td + tr NPN min PNP (V) (A) max m ax (Al (W) (V) (A) (A) tf ty p * max m ax m ax min M> (us) ip *) (M H z) s w itc llin g tran sisto rs

RP20-120512TE

Abstract: RP20-1205DE RP20-1205SE RP20-1212DE RP20-1212SE RP20-1215DE RP20-1215SE 3 Watt Zener Diode 2405se
Contextual Info: POWERLINE - DC/DC-Converter E-Series, 20W, 1.6 kV Isolation, 2:1 Wide Input Range Single, Dual & Triple Output Features ● 20 Watts Output Power ● 2:1 Wide Input Voltage Range ● International Safety Standard Approvals ● Six-Sided Continuous Shield

Contextual Info: Terminations BMA Blind Mate Type DC - 18.0 GHz - 0.5 Watt High Performance • • • • Low VSWR Rugged Stainless Steel Construction Small Size, Light Weight Bead Chain available on all Models Midwest Microwave's BMA Miniature series of high performance coaxial Terminations provide temperature stable, ruggedly built, low

2N2243

Abstract: H21E 2N3439 pnp case to-39
Contextual Info: CB 7 (CB 6) S ilicon N P N transistors, general purpose T g m b -2 5 T ra n s is to rs N P N s ilic iu m , usage g én é ra ! v CEO (V) Case h 2 iE fT (MHz} *s (ns) •c v CEsat (V) <mA) max 60 150 1,5 150/15 40 61 120 150 1,5 150/15 50 61 20 60 150 5 150/15

Contextual Info: Terminations DC - BMA Blind Mate Type 18.0 GHz - 0.5 Watt High Performance Low VSWR • Rugged Stainless Steel Construction ■ Small Size, Light Weight • Bead Chain available on all Models ■ Midwest Microwave's BMA Miniature series of high performance

V610ME04

Abstract: VCOs
Contextual Info: V610ME04 9939 Via Pasar • San Diego, CA 92126 TEL 619 621-2700 FAX (619) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev A1 PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 1950 - 2150 MHz • Tuning Voltage: 0.5-4.5 Vdc • MINI-14H - Style Package

2SD2334

Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062
Contextual Info: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187

Contextual Info: V610ME04 9939 Via Pasar • San Diego, CA 92126 TEL 619 621-2700 FAX (619) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev A1 PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 1950 - 2150 MHz • Tuning Voltage: 0.5-4.5 Vdc • MINI-16 - Style Package