2160 TRANSISTOR DATASHEET Search Results

TAJB105KLRH

Abstract: tic 2160 SXB-2089Z SXB-2089 LL1608-FSR27J MCH185A121JK ML200C an078 MCH185C122KK Sirenza AN-21
Contextual Info: DESIGN APPLICATION NOTE - AN-078 SXB-2089Z Amplifier Application Circuits Abstract Circuit Details Sirenza Microdevices’ SXB-2089 is a high high linearity InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC designed for operation from 5 to 2500 MHz. This application note illustrates application circuits for 450MHz (Mobile Wireless Band) &

s 452-2

Contextual Info: Preliminary Product Description SL-4522 The SL-4522 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2200 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

Contextual Info: Advance Data Sheet Product Description SL-4522 The SL-4522 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2200 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

s 452-2

Abstract: J406 dual 4522 TRANSISTOR J406 SL-45221 SL-45222
Contextual Info: Advance Data Sheet Product Description SL-4522 The SL-4522 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2200 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

Contextual Info: m HA-2548 HARRIS S E M I C O N D U C T O R Precision, High Slew Rate, Wideband Operational Amplifier March 1993 Description Features • High Slew Rate. 120V/ns • Low Offset Voltage. 300^V

Contextual Info: f f l H A R R HA-2548 I S S E M I C O N D U C T O R Precision, High Slew Rate, Wideband Operational Amplifier March1993 Features • Description High Slew Rate. 120V/ iS • Low Offset Voltage. 300^V

ITZ15F12

Abstract: ITZ15F12P T0247
Contextual Info: @ M IT E L ITZ15F12 - _ Powerline N-Channel IGBT S E M IC O N D U C T O R . . . , A dvance Inform ation DS5053-1.2 January 1999 The ITZ15F12 is a very robust non punch through nchannel, enhan cem ent m ode insulated gate bipolar transistor IGBT designed for low power dissipation in a

Contextual Info: HARRIS SEMICON] SECTOR LIE ]> • HA-2548 3 “ SH S Precision, High Slew Rate, Wideband Operational Amplifier March 1993 Features • Description High Stow • Low Offset

Contextual Info: STL80NF3LL N-channel 30V - 0.0045Ω - 80A - PowerFLAT 6x5 STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STL80NF3LL 30V <0.0055Ω 20A (1) 1. When mounted on FR-4 board of 1in², 2oz Cu., t<10sec • Improved die-to-footprint ratio

ITZ15C12P

Abstract: T0247 dc chopper circuit DS5071
Contextual Info: ITZ15C12 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation DS5071 - 1.1 January 1999 The ITZ15C12 is a very robust non punch through nchannel, enhan cem ent m ode insulated gate bipolar transistor IGBT designed for low power dissipation in a

Contextual Info: MIC5022 Half-Bridge MOSFET Driver Preliminary Information General Description Features The MIC5022 half-bridge MOSFET driver is designed to operate at frequencies up to 100kHz and is an ideal choice for high speed applications such as motor control and SMPS

4312 Fan

Abstract: pin diagram of 7447 22342 capacitor amd 2587 2N3904 EMC2102 EMC2102-DZK transistor 8331 FAN23
Contextual Info: EMC2102 RPM-Based Fan Controller with HW Thermal Shutdown PRODUCT FEATURES Datasheet General Description Features The EMC2102 is an SMBus, closed-loop, RPM-based fan controller/driver with hardware HW thermal shutdown and reset controller. The EMC2102 is

tip 3035 transistor

Abstract: relay NAIS 5v 5 pin MJE350 equivalent L3035 rele nais 727HC nais relay 12V 10 A W 8 pin nais relay cross reference tip 147 TRANSISTOR equivalent diode duj
Contextual Info: r = J S G S -T H O M S O N ^ 7 # « , M l© ilL i § T [H M a © S L3035 L3036 S U BSCRIBER LINE INTERFACE C IR C U IT PRELIMINARY DATA • MONOCHIP SILICON SLIC SUITABLE FOR PUBLIC/PRIVATE APPLICATIONS ■ IMPLEMENTS ALL KEY FEATURES OF THE BORSCHT FUNCTION

5000w audio circuit design

Abstract: AN2160 B380-13-F GRM188R71A154KA01D tvs 5000w 5.0smdj Infineon Power Management Selection Guide 2011
Contextual Info: National Semiconductor Application Note 2160 Michael Hartshorne August 2, 2011 Introduction PCB Features The LM5066EVK evaluation board provides the design engineer with a fully functional intelligent monitoring and protection controller board designed for positive voltage systems.

sec d 5072 transistor

Abstract: 1250h 2912 TRANSISTOR PNP D60H diode 5819 AT24C02B PWM 555 FAN CONTROL 127C 2N3904 2N3906
Contextual Info: EMC2101 SMBus Fan Control with 1°C Accurate Temperature Monitoring PRODUCT FEATURES Datasheet GENERAL DESCRIPTION „ The EMC2101 is an SMBus 2.0 compliant, integrated fan control solution complete with two temperature monitors, one external and one internal. Each

Contextual Info: EMC2101 SMBus Fan Control with 1°C Accurate Temperature Monitoring PRODUCT FEATURES Datasheet General Description Features The EMC2101 is an SMBus 2.0 compliant, integrated fan control solution complete with two temperature monitors, one external and one internal. Each

Contextual Info: EMC2101 SMBus Fan Control with 1°C Accurate Temperature Monitoring PRODUCT FEATURES Datasheet General Description Features „ The EMC2101 is an SMBus 2.0 compliant, integrated fan control solution complete with two temperature monitors, one external and one internal. Each

Contextual Info: EMC2101 SMBus Fan Control with 1°C Accurate Temperature Monitoring PRODUCT FEATURES Datasheet GENERAL DESCRIPTION „ The EMC2101 is an SMBus 2.0 compliant, integrated fan control solution complete with two temperature monitors, one external and one internal. Each

Transistor TT 2140

Abstract: 1154 sf lna L439 transistor s11 s12 s21 s22 x band GaAs MESFET 261 sf128 diagram transistor tt 2140
Contextual Info: Agilent ATF-521P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High linearity and P1dB • Low noise figure Pin 8 Pin 7 Drain Pin 6 Pin 5 Source (Thermal/RF Gnd) Description

Transistor TT 2140

Abstract: diagram transistor tt 2140 SF128 ATF-521P8 BCV62B MGA-53543 MO229 RG200D ba 662 CHIP OBSOLETES TT 2170
Contextual Info: Agilent ATF-521P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High linearity and P1dB • Low noise figure Pin 8 Pin 7 Drain Pin 6 Pin 5 Source (Thermal/RF Gnd) Description

diagram transistor tt 2140

Abstract: Transistor TT 2140 SF128 ba 662 CHIP OBSOLETES LL1005-FS39 transistor Amp 2054 equivalent GETEK FR4 0402CG129C9B200 HEMT marking BA L439
Contextual Info: Agilent ATF-521P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High linearity and P1dB Agilent Technologies’s ATF-521P8 is a single-voltage high linearity, low noise

Contextual Info: bq24105-Q1 www.ti.com SLUS953A – AUGUST 2009 – REVISED APRIL 2012 SYNCHRONOUS SWITCHMODE, LI-ION AND LI-POLYMER CHARGE-MANAGEMENT IC WITH INTEGRATED POWER FETs bqSWITCHER Check for Samples: bq24105-Q1 FEATURES DESCRIPTION • • The bqSWITCHER™ series are highly integrated Liion and Li-polymer switch-mode charge management

Transistor TT 2140

Abstract: SF128 pseudomorphic HEMT A004R ATF-521P8 BCV62B MGA-53543 MO229 RG200D UMTS AND GSM AND PCS
Contextual Info: ATF-521P8 High Linearity Enhancement Mode [1] ­Pseudomorphic HEMT in 2x2 mm2 LPCC[3] ­Package Data Sheet Description Features Avago Technologies’ ATF‑521P8 is a single-voltage high linearity, low noise E‑pHEMT housed in an 8-lead JEDECstandard leadless plastic chip carrier LPCC[3] package.

Contextual Info: bq24105-Q1 www.ti.com SLUS953A – AUGUST 2009 – REVISED APRIL 2012 SYNCHRONOUS SWITCHMODE, LI-ION AND LI-POLYMER CHARGE-MANAGEMENT IC WITH INTEGRATED POWER FETs bqSWITCHER Check for Samples: bq24105-Q1 FEATURES DESCRIPTION • • The bqSWITCHER™ series are highly integrated Liion and Li-polymer switch-mode charge management