2142 RAM Search Results

2142 RAM

Abstract: 2142 RAM memory chip intel 2142 2142 2142L 2142L3 max2142 2-142 2142-2
Contextual Info: in t e i 2142 1024 X 4 BIT STATIC RAM 2142-2 2142-3 2142 2142L3 2142L Max. A cce ss Time ns 200 300 450 300 450 Max. Power Dissipation (mw) 525 525 525 370 370 High Density 20 Pin Package Access Time Selections From 200-450ns Identical Cycle and Access Times

2142-2

Contextual Info: in te ! 2142 1024 X 4 BIT STATIC RAM 2142-2 2142-3 2142 2142L3 2142L Max. Access Time ns 200 300 450 300 450 Max. Power Dissipation (mw) 525 525 525 370 370 High Density 20 Pin Package No Clock or Timing Strobe Required Access Time Selections From 200-450ns

intel 2142

Abstract: 2142 RAM memory chip 2142 2142 RAM 2142L 2142L3 max2142 OC615 2-142 2142-2
Contextual Info: in te i 2142 1024 X 4 BIT STATIC RAM 2142-2 2142-3 2142 2142L3 2142L Max. Access Time ns 200 300 450 300 450 Max. Power Dissipation (mw) 525 525 525 370 370 No Clock or Timing Strobe Required Completely Static Memory Directly TTL Compatible: All Inputs and Outputs

HD64F2144FA20

Abstract: HD64F2138ATF20 ac din hfe nv 2148A HD64F2134ATF20 HD64F2138AFA20 HD64F2148FA20 tp 312 transistor Hitachi DSA00167 HD64F2134ATF
Contextual Info: Hitachi Single-Chip Microcomputer H8S/2148 Series H8S/2144 Series H8S/2148F-ZTAT , H8S/2144F-ZTAT™, H8S/2142F-ZTAT™ H8S/2148 HD6432148W, HD6432148, HD64F2148 H8S/2147 HD6432147W, HD6432147 H8S/2144 HD6432144, HD64F2144 H8S/2143 HD6432143 H8S/2142 HD6432142, HD64F2142R

2142

Abstract: 2-142 Transistor+Equivalent+TT+2142
Contextual Info: SEDI 530 Series DOT MATRIX LCD DRIVER-CONTROLLER • DESCRIPTION The SEDI 530 Series are intelligent CMOS LCD controller-drivers with the ability to drive alphanumeric and graphic displays. The LSI communicates with a high-speed microprocessor, such as the Intel 80xx and 68xx

CAP1106

Abstract: D22142 2142 2-142
Contextual Info: SEDI 530 Series DOT MATRIX LCD DRIVER-CONTROLLER • DESCRIPTION The SEDI 530 Series are intelligent CMOS LCD controller-drivers with the ability to drive alphanumeric and graphic displays. The LSI communicates with a high-speed microprocessor, such as the Intel 80xx and 68xx

2142 RAM memory chip

Abstract: 16h7 TT 2142 PLCD 170 04 00b732b free computer hardware repairing notes 2142 RAM 5 x 7 dot matrix display ITT Semiconductors wiring start dol
Contextual Info: • 711002b 0G b73 23 I T T « P H I N Philips Semiconductors Product specification LCD column driver for dot matrix graphic displays PCF8579 FEATURES • LCD column driver m • Used in conjunction with the PCF8578, this device forms part of a chip set capable of driving up to 40960 dots

2142 RAM

Abstract: MSA845 PCF8578 PCF8579 PCF8579T PCF8579U7 VSO56 ontap
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCF8579 LCD column driver for dot matrix graphic displays Product specification Supersedes data of January 1989 File under Integrated Circuits, IC12 Philips Semiconductors September 1995 Philips Semiconductors Product specification

1-640250-0

Abstract: 770849-4 640251-5 640250-1
Contextual Info: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 SL-156 Housings Revised 1-04 Standard Housings — Wire-to-Board Housings .660 [16.76] A .156 [3.96] Typ. .100 [2.54] .019 [0.48] Material: UL94V-0 rated, nylon, white

information applikation

Abstract: Halbleiterbauelemente DDR U555C information applikation mikroelektronik VEB mikroelektronik "Mikroelektronik" Heft mikroelektronik DDR mikroelektronik Heft mikroelektronik applikation Transistoren DDR
Contextual Info: in n ilk a n í o J B lB t a L J I , L J n Í lH KáD Information Applikation Halbleiter Speicher Teil 1 SRAM [ n n ilk r a ^ e lE s k t s n a r iik Information Applikation HEFT 79- , HALBLEITERSPEiCHER TEIL li > < .1* • • r* - . SRAM * VEB Halbleiterwerk Frankfurt Oder

SED1530

Abstract: SED1530D0 SED1530DA SED1530DF SED1531 SED1531D0 SED1532 SED1532D0 SED1532DB SED1635
Contextual Info: PF777-03 SED1530 Series Dot Matrix LCD Controller Driver SSC5000Series ● Ultra Low Power Consumption ● Built-in Power Supply Circuit for LCD ● 133 Driver Output • DESCRIPTION The SED1530 series is a single-chip LCD driver for dot-matrix liquid crystal displays LCD’s which is directly

Microcomputer 8080

Abstract: 8080 microprocessor commands SED1530T 64 x 102 pixels matrix LCD controller/driver D 1062 transistor 132-bit 2142 RAM current boosting transistor doff s 1298
Contextual Info: PF777-04 SED1530 Series SED1530 Series Dot Matrix LCD Controller Driver SSC5000Series ● Ultra Low Power Consumption ● Built-in Power Supply Circuit for LCD ● 133 Driver Output • DESCRIPTION The SED1530 series is a single-chip LCD driver for dot-matrix liquid crystal displays LCD’s which is directly

65x2

Abstract: SED1530DAA SED1530T SED1530 SED1530D0 SED1530DA SED1530DF SED1531 SED1531D0 SED1532
Contextual Info: PF777-03 Series SED1530SED1530 Series Dot Matrix LCD Controller Driver SSC5000Series ● Ultra Low Power Consumption ● Built-in Power Supply Circuit for LCD ● 133 Driver Output • DESCRIPTION The SED1530 series is a single-chip LCD driver for dot-matrix liquid crystal displays LCD’s which is directly

Contextual Info: k~Ü E 'W _ CY7C147 4096 x 1 Static RAM SEMICONDUCTOR Features Functional Description • Automatic power-down when dese­ lected • CMOS for optimum speed/power • Highspeed — 25 ns • Low active power — 440 mW commercial

Contextual Info: TM Red Suite 5 Software Development toolkit for ARM -based Microcontrollers New in Red Suite 5 Cortex-M0+ support Embedded Trace Buffer ETB Micro Trace Buffer (MTB) Latest GNU ARM compilers Latest version of Eclipse Cross platform: Windows, Linux and Mac OS X

2148 ram

Abstract: HD64F2148 FP-100B 2148
Contextual Info: Table 1.1 Overview Item Specifications CPU • • • • General-register architecture  Sixteen 16-bit general registers also usable as sixteen 8-bit registers or eight 32-bit registers High-speed operation suitable for real-time control  Maximum operating frequency: 20 MHz/5 V, 10 MHz/3 V

Contextual Info: LOGIC DEVICES INC 2bE d • sstsiQS a o a n m _ 256K x 1 Radiation-Hard Static RAM FEATURES □ 256K x 1 Radiation-Hard Static RAM with Separate I/O , Chip Select Powerdown □ Address Acces9 Time: S SO ns at 80°C □ Total Dose: £106 Rads Si02

D1 3009

Abstract: 3009 cl 1100 res 3010 IZD1521 IZD1521OA KKD1520 KKD1521AA KKD1521OA SED1520
Contextual Info: TECHNICAL DATA KKD1520 FEATURES • CMOS LSI chips • Many command set • Connection with CPU • Total 80 segment+common drive sets • Low power consumption - 30µW maximum at 2kHz Can be directly coupled with 80-port or 68-port system • Available in chip form or in 100-pin plastic QFP

C1B4

Abstract: C1B4 20 7c16615 CY7C164-15LC CY7C164-20DC CY7C164-20LC CY7C164 CY7C166 7c164-15 7C164
Contextual Info: CY7C164 CY7C166 CYPRESS SEMICONDUCTOR 16,384 x 4 Static R/W RAM on the four input/output pins I/Oo through I/O3 is written into the memory location specified on the address pins (Ao through A 13). Reading the device is accomplished by taking chip enable (CE) LOW (and OE LOW for

Transistor TT 2144

Abstract: transistor tt 2146
Contextual Info: MICRO-DEVICES PCS LINEAR POWER AM PLIFIER T y p ic a l A p p lic a tio n s • 4.8V CDM A PCS Handsets Driver Amplifier in Cellular Base Stations • 4.8V TDM A PCS Handsets Portable Battery Powered Equipment POWER AMPLIFIERS • 4.8V PACS PCS Handsets P r o d u c t D e s c r ip tio n

67c401

Abstract: 67C4023 67C402 67C4023-15 67C402-10 67C401-10 67C4013 67C4023-10
Contextual Info: a 67C401/13, 67C402/23 Advanced Micro Devices Low Density First-In First-Out FIFO 64 x 4, 64 x 5 CMOS Memory (Cascadable) DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ RAM-based architecture for short fall-through delay Full CMOS cell for maximum noise Immunity

67C402

Abstract: IR 2153 67C401-10
Contextual Info: 67C401/13, 67C402/23 Advanced Micro Devices Low Density First-In First-Out FIFO 64 x 4, 64 x 5 CMOS Memory (Cascadable) DISTINCTIVE CHARACTERISTICS RAM-based architecture for short fall-through delay • Zero standby power ■ High-speed 15 MHz shift-in/shlfi-out rates

Contextual Info: a 67C401/13, 67C402/23 Advanced Micro Devices Low Density First-In First-Out FIFO 64 x 4,64 x 5 CMOS Memory (Cascadable) DISTINCTIVE CHARACTERISTICS RAM-based architecture for short fall-through delay • Zero standby power ■ High-speed 15 MHz shift-ln/shift-out rates

sidebraze

Contextual Info: 256K x 1 Radiation-Hard Static RAM DESCRIPTION FEATURES □ 256K x 1 Radiation-H ard Static RAM with Separate I/O , Chip Select Pow erdow n □ A ddress A ccess Time: < 50 ns at 80°C □ Total Dose: 2 1 0 6 Rads Si02 □ Dose Rate U pset: □ Dose Rate Survivability: