212 LM Search Results

AM312

Contextual Info: Am 112/212/312 Compensated, High-Performance Operational Amplifier Distinctive Characteristics • The A m 1 12/212/312 are functionally, electrically, and pin-for-pin equivalents to the National L M 112/212/312. • Lo w input bias currents: 800pA • Lo w input offset currents: 50pA

741 voltage follower

Contextual Info: Am 112/212/312 Compensated, High-Performance Operational Amplifier Distinctive Characteristics • The A m 1 12 /212 /3 12 are fu n ctio n a lly, electrically, and pin-for-pin equivalents to the National L M 112/212/312. • Low in p u t bias currents: 800pA

Contextual Info: 0011103 1 ‘" P 7 5 ^ 2 -O S S G S -T H O M S O N * TS75C25 t 7 V.22 BIS, V.22, BELL 212, V.21 V.23, BELL 103 M O D EM C H IP SET ADVANCE DATA • CCITT V.22 BIS COMPATIBLE MODEM CHIP of modems complying with CCITT V.21, V.22, V.23, SET and BELL 103, 212 recommendations. The modem

v10096

Contextual Info: 112 212 312 Precision Operational Amplifiers GENERAL DESCRIPTION DESIGN FEATURES The LM112, LM212, and LM312 are Super Beta operational amplifiers, each fabricated on a silicon chip by the planar epitaxial process. • Input Bias Current 3.0nA Maximum Over Temperature

ST20C2

Abstract: ST20 SS6-8212
Contextual Info: ST20C2/C4 Core Instruction Set Reference Manual 72-TRN-273-01  January 1996 2/212  Contents 1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 1.10

Contextual Info: HOD3021 -212/BBA Single Fiber Duplex Modules ELECTRO-OPTICAL SPECIFICATIONS 1300nm LED PARAMETER Fiber Coupled Power. Forward Voltage Reverse Voltage Peak Wavelength Spectral Bandwidth Response Time 10-90% 90-10% Analog Bandwidth Po Temperature Coefficient

LT1004

Abstract: 40173 R030 R-030
Contextual Info: RELIABILITY DATA LT1004 / LM185/285/385 8/21/2006 • OPERATING LIFE TEST PACKAGE TYPE SAMPLE SIZE OLDEST DATE CODE HERMETIC SOIC/SOT/MSOP TO-92 NEWEST DATE CODE 890 8317 212 8601 4,456 8416 5,558 • HIGHLY ACCELERATED STRESS TEST AT +131°C/85%RH PACKAGE

Contextual Info: <£&nl-Contlut!to\0 STERN AVE. TELEPHONE: 973 378-2922 SPRINGFIELD, NEW JERSEY 07081 (212)227-6005 U.SA FAX: (973) 376-8980 2N1778 Minimum Forward Brtakovtr V«ltB0. (VB,)t T, = — iS'Cio+lM'C Typ. (2N1778) •• R*p*lltlv> Pialc Rtvtri* Vollag* (PRV)f

9948

Abstract: LT1004 R030 9721 TO-92 r-030
Contextual Info: RELIABILITY DATA LT1004 / LM185/285/385 12/8/2000 • OPERATING LIFE TEST PACKAGE TYPE SAMPLE SIZE OLDEST DATE CODE HERMETIC SOIC/SOT/MSOP TO-92 796 8317 212 8601 4,456 8416 5,464 • HIGHLY ACCELERATED STRESS TEST AT +131°C/85%RH PACKAGE TYPE SAMPLE SIZE

Contextual Info: ., One. <£emL-£on Luatoi 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: (973 376-2922 (212)227-6006 FAX: (973) 376-8960 2N3962 U.SA PNP SILICON TRANSISTOR DESCRIPTION 2N3962 is PNP silicon planar transistor designed for AF small signal amplifier stages.

MPS-U95

Abstract: PSU45
Contextual Info: ^Products., Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MPS-U95 (SILICON) PNP SILICON DARLINGTON TRANSISTOR PNP SILICON DARLINGTON AMPLIFIER TRANSISTOR . . . designed for amplifier and driver applications.

Contextual Info: ^ctddty <£unl-C.QtuL»atot ZPioJueti, Una. TELEPHONE: 973 379-2982 (212) 227-6005 FAX: (973) 3784960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N3904 NPN SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCH MAXIMUM RATINGS Value Symbol Rating Collector-Emitter Voltage

Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 3794980 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.3A 2N3998 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTOR •electrical characteristics at 25*C case temperature (unless otherwise noted) PARAMETER UNIT

Contextual Info: , Una. 208TERNAVE SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212) 227-0006 FAX: (973) 376-8980 2N5455 PNP HIGH SPEED SATURATED LOGIC SWITCH ABSOLUTE MAXIMUM RATINGS ( M o t e l ) Maximum Temperatures ' Storage Temperature Operating Junction Temperature

BNC-JRM-2X02-75

Abstract: PBT30GF BNC-JRM2X02-75
Contextual Info: 1 I I 8 I File No. I I I 212 • I ISHEET q : 1/1 SPECIFICATION M ating/Unm ating:500 Cycles Nominal lm pedance:75 Ohm s Frequency Range:0~1 GHz Operating Voltage:500 Volts RMS Contact Resistance:3.0Milliohm s Max Gold Dielectric Withstanding Voltage: 1500Volts RM S

40349 transistor

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 40349 Hometaxial-Base Silicon N-P-N Power Transistor Maximum Ratings, Absolute-Maximum Values: * COLLECTOR-TO-BASE VOLTAGE * COLLECTOR-TO-EMITTER VOLTAGE:

Contextual Info: <£tmi-C.on<Lu3ko'i. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 3N TELEPHONE: 973 376-2022 (212) 227-6005 FAX: (973) 378-8860 169 N-CHANNEL MAXIMUM RATINGS 25°C unless otherwise notod) Ratine. "Drain-Source Voltage "Drain-Gala Voltaa* "Gilt-Source Voltage

Contextual Info: ^£.mi-L.onaactoi L/^ , line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 ESJA57-04A RATINGS AND CHARACTERISTICS ABSOLUTE MAX. RATINGS. ( Ta=25 °C unless otherwise noted, ) Items Symbo I s

Contextual Info: 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 378-8960 MECHANICAL DATA Dimensions in mm (inches) 2N1617 19.05 (0.750) mln. NPN SILICON TRANSISTOR to O i 31 si! Bipolar Power Transistor 15.42 (0.607) max.

Contextual Info: <z/Vsur , {Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2IM2979 DUAL NPN LOW LEVEL LOW NOISE DIFFERENTIAL AMPLIFIER ABSOLUTE MAXIMUM RATINGS (Now 1) Maximum Temperatures Storage Temperature Operating Junction Temperature

2N6901

Contextual Info: TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212)227-6005 FAX: (973) 376-8960 U.SA 2N6901 ABSOLUTE MAXIMUM RATINGS (Tc = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain — Source Voltage VDS 1 00

OA47

Abstract: diode oa47
Contextual Info: JSIIEU ^zmi-donaueto'i ^roauati, Line. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. OA47 Gold Bonded Germanium Diode FEATURES Low forward voltage drop —low power consumption Thirty years of proven reliability

Contextual Info: i, fine. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 378-8960 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N2905 TO-39 2W2905 are PNP silicon planar epitaxial transistors. It is intended for driver stage of power amplifiers and switching applications.

SK100 transistor

Abstract: C125T-A rb342a stc 1740 k0389 l9150 St4540 st l9150 transistor nec 8772 MNT S100
Contextual Info: Cooper Crouse-Hinds Cross Reference Competitor: Adalet Competitor Catalog Number XFC-210 ECGJH110 XFC-212 ECGJH112 XFC-215 ECGJH115 XFC-218 ECGJH118 XFC-221 ECGJH121 XFC-224 ECGJH124 XFC-227 ECGJH127 XFC-230 ECGJH130 XFC-233 ECGJH133 XFC-236 ECGJH136 XFC-24 ECGJH14