2110 TRANSISTOR Search Results

Solid State Micro Technology

Abstract: ssm2110 li log compressor audio use transistor transistor KIN
Contextual Info: SSM Solid State Micro Technology 2110 for Music SSM 2110 AUDIO LEVEL DETECTION SYSTEM* DESCRIPTION The S S M 2110 is a precision level detection system designed specifically for audio applications. It features both linear and logarithmic dB outputs, and unlike previous designs, the dB output can be internally com pensated for scale factor changes

Contextual Info: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz

VdS 2093 2009

Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114
Contextual Info: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz

PTF210301E

Abstract: marking us capacitor pf l1 PTF210301 PTF210301A DD 127 D TRANSISTOR
Contextual Info: PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description Features The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

PTFB213004

Abstract: PTFB213004F h-37275-8
Contextual Info: Preliminary PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz

CW 7805 regulator

Abstract: cw 7805 TRANSISTOR CW 7805 resistor 1.2k 1/CW 7805
Contextual Info: PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description Features The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

CW 7805

Abstract: CW 7805 regulator regulator CW 7805 P10ECT-ND CW 7805 1k 7805 datasheet ptf21090 TRANSISTOR CW 7805 resistor* 24k ohm PCC1772CT-ND
Contextual Info: PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description Features The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

rogers

Contextual Info: PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description Features The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

CW 7805 regulator

Abstract: TRANSISTOR CW 7805 regulator CW 7805 cw 7805
Contextual Info: PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description Features The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

Contextual Info: PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description Features The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

210451

Abstract: smd marking f2 smd transistor marking l6 BDS31314 PTF210451 PTF210451E
Contextual Info: PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description Features The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

PTF210301E

Contextual Info: PTF210301E PTF210301F High Power RF LDMOS Field Effect Transistor 30 W, 2110 – 2170 MHz Description The PTF210301E and PTF210301F are 30-watt, internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation

CW 7805

Abstract: CW 7805 regulator ERA-H-30275-4-1-2304 LM7805 7805 datasheet DD 127 D TRANSISTOR free download voltage regulator 7805 data sheet LM 7805 DATA SHEET uA 7805 365 pF variable capacitor
Contextual Info: PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description Features The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and

PTF210301A

Abstract: PTF210301E
Contextual Info: PTF210301A High Power RF LDMOS Field Effect Transistor 30 W, 2110 – 2170 MHz PTF210301A Package 20265 Description The PTF210301A is a 30-watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

CW 7805

Abstract: CW 7805 regulator BCP56 LM7805 P10ECT-ND PTF211802A regulator CW 7805
Contextual Info: PTF211802A LDMOS RF Power Field Effect Transistor 180 W, 2110 – 2170 MHz Description Features The PTF211802A is a 180-watt, internally-matched, laterally double-diffused, GOLDMOS push-pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and

cw 7805

Abstract: CW 7805 regulator TRANSISTOR CW 7805
Contextual Info: PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description Features The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and

PA15

Abstract: pa15 transistor transistor pa15
Contextual Info: PRELIMINARY PTF 102003* GOLDMOS Field Effect Transistor 120 Watts, 2110-2170 MHz Description The PTF 102003 is an internally matched, laterally double-diffused, push-pull, GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. It is rated at 120 watts output power

702 Z TRANSISTOR smd

Abstract: 702 Z smd TRANSISTOR ATC capacitor 702 TRANSISTOR smd capacitor 2220 702 H transistor smd PCC104BCT LM7805 smd marking us capacitor pf l1 transistor smd marking ND
Contextual Info: PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz Description Features The PTF211301 is a 130–W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single– and two–carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures

702 Z TRANSISTOR smd

Abstract: 702 Z smd TRANSISTOR 702 k TRANSISTOR smd SMD transistor marking 702
Contextual Info: PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz Description Features The PTF211301 is a 130–W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single– and two–carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures

Contextual Info: PRELIMINARY GOLDMOS Field Effect Transistor 45 Watts, 2110-2170 MHz Description Key Features The PTF 102088 is a 45–watt internally matched GOLDMOS FET intended for WCDMA applications from 2110-2170 MHz. This device typically operates at 47% efficiency at P-1dB with a linear gain of

1000 watts power amp circuit diagram

Abstract: 2160 transistor
Contextual Info: PRELIMINARY GOLDMOS Field Effect Transistor 90 Watts, 2110-2170 MHz PTF 102002* Description Key Features The PTF 102002 is an internally matched 90–watt GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This LDMOS device typically operates at 40% efficiency at P-1dB with a

VIM-332

Abstract: 200B103MW 50X 200B103MW
Contextual Info: PTF 102088 LDMOS RF Power Field Effect Transistor 45 Watts, 2110–2170 MHz Key Features The PTF 102088 is a 45–watt internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates with 47% efficiency at P–1dB and has a

Contextual Info: 120 Watts, 2110-2170 MHz GOLDMOS Field Effect Transistor PTF 102003 Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold

UNR2111

Abstract: UNR2113 UNR2110 UNR2112 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119
Contextual Info: Transistors with built-in Resistor / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Silicon PNP epitaxial planer transistor