2110 TRANSISTOR Search Results

Solid State Micro Technology

Abstract: ssm2110 li log compressor audio use transistor transistor KIN
Contextual Info: SSM Solid State Micro Technology 2110 for Music SSM 2110 AUDIO LEVEL DETECTION SYSTEM* DESCRIPTION The S S M 2110 is a precision level detection system designed specifically for audio applications. It features both linear and logarithmic dB outputs, and unlike previous designs, the dB output can be internally com pensated for scale factor changes

PTF210301E

Abstract: marking us capacitor pf l1 PTF210301 PTF210301A DD 127 D TRANSISTOR
Contextual Info: PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description Features The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

PTFB213004

Abstract: PTFB213004F h-37275-8
Contextual Info: Preliminary PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz

CW 7805

Abstract: CW 7805 regulator regulator CW 7805 P10ECT-ND CW 7805 1k 7805 datasheet ptf21090 TRANSISTOR CW 7805 resistor* 24k ohm PCC1772CT-ND
Contextual Info: PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description Features The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

210451

Abstract: smd marking f2 smd transistor marking l6 BDS31314 PTF210451 PTF210451E
Contextual Info: PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description Features The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

CW 7805

Abstract: CW 7805 regulator ERA-H-30275-4-1-2304 LM7805 7805 datasheet DD 127 D TRANSISTOR free download voltage regulator 7805 data sheet LM 7805 DATA SHEET uA 7805 365 pF variable capacitor
Contextual Info: PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description Features The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and

PTF210301A

Abstract: PTF210301E
Contextual Info: PTF210301A High Power RF LDMOS Field Effect Transistor 30 W, 2110 – 2170 MHz PTF210301A Package 20265 Description The PTF210301A is a 30-watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

PA15

Abstract: pa15 transistor transistor pa15
Contextual Info: PRELIMINARY PTF 102003* GOLDMOS Field Effect Transistor 120 Watts, 2110-2170 MHz Description The PTF 102003 is an internally matched, laterally double-diffused, push-pull, GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. It is rated at 120 watts output power

1000 watts power amp circuit diagram

Abstract: 2160 transistor
Contextual Info: PRELIMINARY GOLDMOS Field Effect Transistor 90 Watts, 2110-2170 MHz PTF 102002* Description Key Features The PTF 102002 is an internally matched 90–watt GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This LDMOS device typically operates at 40% efficiency at P-1dB with a

Contextual Info: 120 Watts, 2110-2170 MHz GOLDMOS Field Effect Transistor PTF 102003 Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold

LM7805 M SMD

Abstract: LM7805 smd 8 pin LM7805 smd smd lm7805 LM7805 05 LM7805 LM7805 footprint lm7805 datasheet P221E marking us capacitor pf l1
Contextual Info: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in

Contextual Info: PRELIMINARY GOLDMOS Field Effect Transistor 160 Watts, 2110-2170 MHz PTF 102005* Description Key Features The PTF 102005 is a 160–watt internally matched GOLDMOS FET intended for WCDMA applications from 2110-2170 MHz. This device typically operates at 45 % efficiency at P-1dB with a linear gain of 13

marking us capacitor pf l1

Abstract: BCP56 LM7805 PTFA210301E infineon gold
Contextual Info: PTFA210301E Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110 – 2170 MHz Description The PTFA210301E is a thermally-enhanced, 30-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is optimized for single- and two-carrier WCDMA operation from 2110

BDS31314

Abstract: PTF210451E PTF210451F
Contextual Info: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest

smd capa

Abstract: p33k
Contextual Info: Package 20275 120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET PD21120R6 Description Key Features The PD21120R6 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold

0119A

Abstract: IC/0119A IC/IC/0119A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 7, 2/2012 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to

MRF6S21100H

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110

Contextual Info: MOTOROLA Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21130S Designed for W–CDMA base station applications at frequencies from 2110

atc600

Abstract: ATC600 CAPACITORS 465B A114 A115 AN1955 JESD22 MRF7S21170HR3 MRF7S21170HSR3 ATC100B0R3BT500X
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 4, 5/2007 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 8, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085LR3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110

20-60MHz

Abstract: 100b101jw500xt
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 2, 8/2006 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to

MRF6S21060N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21060NR1 MRF6S21060NBR1 Designed for W- CDMA base station applications with frequencies from 2110

j378

Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S21100N MRF6S21100NBR1 MRF6S21100NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21100N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100NR1 MRF6S21100NBR1 Designed for W- CDMA base station applications with frequencies from 2110

100B2R7CP500X

Abstract: MRF5S21100H AN1955 C1210C104J5RAC MRF5S21100HR3 MRF5S21100HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110