SS210F
|
|
Shandong Jingdao Microelectronics Co Ltd
|
Surface mount Schottky barrier rectifier with reverse voltage from 20 to 200 V, 2.0 A average forward current, low forward voltage drop, high surge current capability, and operating junction temperature up to 125 °C. |
Original |
PDF
|
|
|
|
SS22FL Thru SS210FL
|
|
CREATEK Microelectronics
|
Schottky Barrier Rectifier in SOD-123FL package with reverse voltage ratings from 20V to 100V, average forward current up to 2A, low forward voltage drop, and fast switching for use in power supplies, RF modules, and portable devices. |
Original |
PDF
|
|
|
|
SS210F
|
|
SUNMATE electronic Co., LTD
|
Surface mount Schottky barrier diode with 2.0 A forward current, 20 to 100 V reverse voltage range, low forward voltage drop, and plastic SMBF case for surface mounting in low voltage applications.Surface mount Schottky barrier diode with 2.0 A forward current, 20 to 100 V repetitive peak reverse voltage, low forward voltage drop, and plastic SMBF case for automatic assembly in low voltage applications.Schottky barrier diode in SMBF surface mount package, 2.0 A average forward current, 20 to 100 V repetitive peak reverse voltage, low forward voltage drop, guard ring die construction, suited for low voltage and high efficiency applications. |
Original |
PDF
|
|
|
|
SS210F
|
|
JCET Group
|
2A Schottky rectifier diode in SMAF package with repetitive peak reverse voltage from 20V to 200V, average forward current of 2A, and surge current capability of 50A. |
Original |
PDF
|
|
|
|
KMB210F
|
|
Microdiode Semiconductor (MDD)
|
Bridge Rectifier Diode |
Original |
PDF
|
|
|
|
SS210F/SS210BF
|
|
Microdiode Semiconductor (MDD)
|
Surface mount Schottky barrier rectifier, reverse voltage 20 to 200 Volts, forward current 2.0 Ampere, dimensions in inches and millimeters. |
Original |
PDF
|
|
|
|
SK210F
|
|
SUNMATE electronic Co., LTD
|
Surface mount Schottky barrier diode with 20 to 100V reverse voltage range, 2.0A average forward current, low forward voltage drop, and guard ring die construction for enhanced reliability in low voltage applications. |
Original |
PDF
|
|
|
|
SS210F
|
|
Shikues Semiconductor
|
Metal silicon junction, majority carrier conduction, low power loss, high efficiency, high forward surge current capability, SMAF case, solderable terminals, 27mg. |
Original |
PDF
|
|
|
|
SS210F
|
|
Shenzhen Heketai Electronics Co Ltd
|
Schottky barrier diode in SMAF surface mount package, with repetitive peak reverse voltage from 20 to 200V, forward surge current up to 50A, 2.0A average rectifying current, and low forward voltage drop. |
Original |
PDF
|
|
|
|
SS210F
|
|
AK Semiconductor
|
Surface Mount Schottky Barrier Rectifier with reverse voltage from 20 to 200V, forward current of 2A, low forward voltage drop, high surge current capability, and operating junction temperature from -55 to +150°C.Surface Mount Schottky Barrier Rectifier in SMAF package, 20 to 200V reverse voltage, 2A average forward current, low forward voltage drop, high surge current capability, lead-free compliant.Surface Mount Schottky Barrier Rectifier with reverse voltage ratings from 20 to 200V, forward current of 2A, low forward voltage drop, and high surge current capability in SMAF package. |
Original |
PDF
|
|
|
SS210F
