2100 WCDMA REPEATER CIRCUIT Search Results

2100 WCDMA repeater circuit

Contextual Info: E-pHEMT Drive Amplifier CE2024 Product Features Application CP-16 package • GaAs E-pHEMT chip on board • High Efficiency and Linearity • High Output Power and Small Size • Single Supply Voltage 5v with Ceramic Substrate • No External Matching Circuit Needed

GSM 3g repeater circuit

Abstract: HMC 007
Contextual Info: HMC457QS16G / 457QS16GE v01.0705 AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Designer’s Kit Available Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier:

2100 wcdma repeater circuit

Abstract: HMC457 HMC457QS16G GSM 3g repeater circuit RF TRANSISTOR 1 WATT HMC457QS16GE
Contextual Info: HMC457QS16G / 457QS16GE v03.0907 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA 48% PAE @ +32 dBm Pout

Contextual Info: HMC457QS16G / 457QS16GE v03.0907 LINEAR & POWER AMPLIFIERS - SMT 11 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range ampliier: Output IP3: +46 dBm

GSM 3g repeater circuit

Abstract: HMC457QS16G 2100 WCDMA repeater circuit
Contextual Info: HMC457QS16G / 457QS16GE v02.0107 AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA

Contextual Info: HMC457QS16G / 457QS16GE v01.0705 AMPLIFIERS - SMT 8 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA

HMC457QS16G

Abstract: GSM repeater circuit using transistor 2100 mhz rf power amplifier circuit diagram 500 watt power circuit diagram GSM 3g repeater circuit 3g amplifier 2100 WCDMA repeater circuit HMC457
Contextual Info: HMC457QS16G / 457QS16GE v03.0907 6 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA 48% PAE @ +32 dBm Pout

GSM 3g repeater circuit

Abstract: HMC457 HMC457QS16G
Contextual Info: HMC457QS16G / 457QS16GE v03.0907 LINREAR & POWER AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm

Contextual Info: HMC457QS16G v00.0904 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Features Typical Applications AMPLIFIERS - SMT 8 The HMC457QS16G is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA 48% PAE @ +32 dBm Pout

GSM WCDMA repeater circuit

Abstract: HMC457QS16G 2100 mhz rf power amplifier circuit diagram GSM 3g repeater circuit 301 miniature smt transistor
Contextual Info: HMC457QS16G v00.0904 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz AMPLIFIERS - SMT 8 Features Typical Applications The HMC457QS16G is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA 48% PAE @ +32 dBm Pout

GRM188R71H104KA93

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1.1, 3/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier

ma01 transistor

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1, 3/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1.2, 2/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier

2100 WCDMA repeater circuit

Abstract: FR408 z137
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1.2, 2/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier

FR408

Abstract: 06035J100GBS 25c2625 MARKING HBT AN1955 GRM188R71H104KA93 06035J5R6BBS RR0816Q-121-D MMA20312 MMA20312BT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 0, 10/2010 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier

WP-22

Contextual Info: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz

GRM188R60J106ME47

Abstract: 37Z6 FR408
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 1, 12/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station

Contextual Info: Document Number: MMA20312BV Rev. 0, 8/2011 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 1, 12/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station

FR408

Abstract: FR-408 06035J100GBS GRM188R71H104KA93 GRM188R60J106ME47 06033J220GBS AN1955 z137 C18 QFN 06035J4R7BBS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 0, 8/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station

Contextual Info: CV221-2A 1.9 – 2.7 GHz Dual-Branch Downconverter IF1 OUTPUT GND 26 AMP1 INPUT GND 27 GND MIXER IF1 28 25 24 23 22 IF 21 BIAS RF GND 2 20 GND IF Amp 1 BIAS 3 19 GND GND 4 18 GND GND 5 LO Driver Amp 17 LO GND 6 IF Amp 2 16 GND RF 2 7 INPUT RF 15 GND 10 11

CV221-2A

Abstract: CV221-2AF CV221-2APCB240 JESD22-A114
Contextual Info: CV221-2A 1.9 – 2.7 GHz Dual-Branch Downconverter IF1 OUTPUT GND 26 AMP1 INPUT GND 27 GND MIXER IF1 28 25 24 23 22 IF RF 21 BIAS GND 2 20 GND IF Amp 1 BIAS 3 19 GND GND 4 18 GND GND 5 LO Driver Amp 17 LO GND 6 IF Amp 2 16 GND 15 GND IF 8 9 10 11 12 13 14

up converter RF 2,40 GHz

Abstract: CV221-2A CV221-2AF CV221-2APCB240 JESD22-A114
Contextual Info: CV221-2A 1.9 – 2.7 GHz Dual-Branch Downconverter IF1 OUTPUT GND 26 AMP1 INPUT GND 27 GND MIXER IF1 28 25 24 23 22 IF RF 21 BIAS GND 2 20 GND IF Amp 1 BIAS 3 19 GND GND 4 18 GND GND 5 LO Driver Amp 17 LO GND 6 IF Amp 2 16 GND 15 GND 8 9 10 11 12 13 14 GND

CV221-2A

Abstract: CV221-2AF CV221-2APCB240 JESD22-A114
Contextual Info: CV221-2A The Communications Edge TM 1.9 – 2.4 GHz Dual-Branch Downconverter IF1 OUTPUT GND GND 26 AMP1 INPUT MIXER IF1 27 GND GND 28 25 24 23 22 IF RF 21 BIAS GND 2 20 GND IF Amp 1 BIAS 3 19 GND GND 4 18 GND GND 5 LO Driver Amp 17 LO GND 6 IF Amp 2 16 GND