20V SOT-23 P-CHANNEL MOSFET Search Results

APM2700A

Abstract: APM2700AC STD-020C
Contextual Info: APM2700AC Dual Enhancement Mode MOSFET N- and P-Channel Features • Pin Description N-Channel 20V/2A, RDS(ON)= 125mΩ(typ.) @ VGS= 4.5V RDS(ON)= 175mΩ(typ.) @ VGS= 2.5V RDS(ON)= 280mΩ(typ.) @ VGS= 1.8V • P-Channel Top View of SOT-23-6 -20V/-1.4A,

Contextual Info: APM2700AC Dual Enhancement Mode MOSFET N- and P-Channel Features • Pin Description N-Channel 20V/2A, RDS(ON)= 125mΩ(typ.) @ VGS= 4.5V RDS(ON)= 175mΩ(typ.) @ VGS= 2.5V RDS(ON)= 280mΩ(typ.) @ VGS= 1.8V • P-Channel Top View of SOT-23-6 -20V/-1.4A,

2301P

Abstract: AF2301P P-Channel MOSFET code L 1A 2301p marking
Contextual Info: AF2301P 20V P-Channel Enhancement Mode MOSFET Features Product Summary - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package VDS = - 20V

APM2701AC

Abstract: APM2701A apm2701 A104 diode MOSFET P-channel SOT-23-6 AAAX sot 26 Dual N-Channel MOSFET
Contextual Info: APM2701AC Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel D1 20V/3A, S1 D2 RDS(ON)=50mΩ(typ.) @ VGS=4.5V RDS(ON)=65mΩ(typ.) @ VGS=2.5V • G1 P-Channel S2 G2 Top View of SOT-23-6 -20V/-2A, RDS(ON)=90mΩ(typ.) @ VGS=-4.5V

Mosfet

Abstract: SSF2341E marking 2341E 2341E marking 4a sot23
Contextual Info: SSF2341E 20V P-Channel MOSFET Main Product Characteristics VDSS -20V RDS on 37mΩ (typ.) ID -4A ① SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and

SSS2301A

Abstract: sot-23 P-Channel MOSFET
Contextual Info: SSS2301A P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) -20V -2.3A SOT-23 RDS(ON) (mΩ) Max D 130 @VGS = -4.5V G 190 @VGS = -2.5V S D FEATURES Super high density cell design for low RDS(ON). G Rugged and reliable. SOT-23 package. S Pb free.

sss2309

Contextual Info: SSS2309 P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) -20V -2.3A SOT-23 RDS(ON) (mΩ) Max D 130 @VGS = -4.5V G 190 @VGS = -2.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.

marking W26 sot23

Abstract: transistor w26 sot23 transistor marking w26 marking CODE w26
Contextual Info: Product specification WPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET VDS V Rds(on) (ȍ) 0.056@ VGS=̢4.5V 0.069@ VGS=̢2.5V -20 0.086@ VGS=̢1.8V SOT-23 Descriptions D 3 The WPM2026 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced

SSS2209

Abstract: sot-23 P-Channel MOSFET
Contextual Info: SSS2209 P-Channel Enhancement Mode MOSFET Product Summary VDS V SOT-23 RDS(ON) (mΩ) Max ID (A) D 170 @VGS = -4.5V -2.0A -20V G 240 @VGS = -2.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.

sot-23 P-Channel MOSFET

Contextual Info: SSS2323 P-Channel Enhancement Mode MOSFET SOT-23 Product Summary VDS V ID (A) D RDS(ON) 35 @VGS = -4.5V G 55 @VGS = -2.5V -4A -20V S 100 @VGS = -1.8V D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G SOT-23 package. S Pb free.

Mosfet

Abstract: SSF2301 2301 marking sot-23
Contextual Info: SSF2301 20V P-Channel MOSFET Main Product Characteristics D VDSS -20V RDS on 60mΩ (typ.) ID -3A G S ① SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and

M2301A

Abstract: APM2301A J-STD-020A 2301AA
Contextual Info: APM2301A P-Channel Enhancement Mode MOSFET Features Pin Description D • -20V/-3A , RDS ON =72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged SOT-23 Package G Top View of SOT-23

SI2301

Abstract: si2301 sot-23
Contextual Info: SI2301 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A 130mΩ 190mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G SOT-23(PACKAGE)

Contextual Info: FDN338P 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS ON , Vgs@-4.5V, Ids@-1.6A= 115m Ω RDS(ON), Vgs@-2.5V, Ids@-1.3A= 155mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G SOT-23(PACKAGE)

Contextual Info: SMD Type MOSFET Complementary PowerTrench MOSFET KDC6020C FDC6020C ( SOT-23-6 ) Unit: mm • Features ● RDS(ON) ＜ 27mΩ (V GS = 4.5V) ● RDS(ON) ＜ 39mΩ (V GS = 2.5V) 6 5 ０．３ｍｉｎ ● N-Channel ：V DS=20V I D=5.9A 4 ● P-Channel： VDS =-20V ID=-4.2A

Contextual Info: SMD Type MOSFET Dual Enhancement Mode MOSFET APM2701CG • Features SOT-23-6 Unit: mm ● RDS(ON) ＜ 70mΩ (V GS = 4.5V) ● RDS(ON) ＜ 110mΩ (VGS = 2.5V) S1 D1 ０．３ｍｉｎ ● N-Channel ：V DS=20V I D=3A D2 ● P-Channel： VDS =-20V ID=-1.5A

2301P

Abstract: 2301p marking AF2301P
Contextual Info: AF2301P 20V P-Channel Enhancement Mode MOSFET „ Features „ Product Summary - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package

Contextual Info: Product specification WPM2015 Single P-Channel, -20V, -2.4A, Power MOSFET VDS V -20 Rds(on) (ȍ) 0.081@ VGS=4.5V 0.103@ VGS=2.5V Descriptions SOT-23 D The WPM2015 is P-Channel enhancement 3 MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)

APM2700AC

Abstract: APM2700A MOSFET P SOT-23 S1 SOT-23-6 SOT-23 marking 2f p-Channel ISD05 sot-23-6 n-channel mosfet
Contextual Info: APM2700AC Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel 20V/2A, D1 RDS(ON)= 125mΩ(typ.) @ VGS= 4.5V S1 D2 RDS(ON)= 175mΩ(typ.) @ VGS= 2.5V RDS(ON)= 280mΩ(typ.) @ VGS= 1.8V • G1 S2 G2 P-Channel Top View of SOT-23-6

mosfet ir 840

Abstract: IRLML6402 irlml6402 equivalent IRLML6402 micro3 IC BA 9 AN-994 g 995
Contextual Info: PD- 93755 IRLML6402 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -20V G RDS(on) = 0.065Ω S Description These P-Channel MOSFETs from International Rectifier utilize

IRLML6402

Abstract: AN-994 IRLML2402 IRLML6302 IRLML6402 micro3 application IRLML2502
Contextual Info: PD - 93755B IRLML6402 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -20V G RDS(on) = 0.065Ω S Description These P-Channel MOSFETs from International Rectifier utilize

ML5203

Abstract: IRLML6402 sot-23 marking code pe irlml2803 AN-994 IRLML6402 micro3 93755C irlml6402 in TO-92
Contextual Info: PD - 93755C IRLML6402 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -20V G RDS(on) = 0.065Ω S Description These P-Channel MOSFETs from International Rectifier utilize

Contextual Info: AP2301BGN-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS Simple Drive Requirement Small Package Outline -20V RDS ON D 130m ID Surface Mount Device - 2.8A RoHS Compliant & Halogen-Free S SOT-23 Description

Contextual Info: HI-SINCERITY Spec. No. : MOS200836 Issued Date : 2008.03.06 Revised Date : 2008.03.06 Page No. : 1/6 MICROELECTRONICS CORP. H2301N H2301N Pin Assignment & Symbol P-Channel Enhancement-Mode MOSFET -20V, -2.2A 3 1 3-Lead Plastic SOT-23 Package Code: P Pin 1: Gate 2: Source 3: Drain