20V P-CHANNEL POWER MOSFET Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2301Z Preliminary Power MOSFET 20V P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT2301ZL is a -20V P-channel enhancement mode Power MOSFET with fast switching speed, low on-resistance, favorable stabilization. It can be used in commercial and industrial

UT2301ZL

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2301Z Preliminary Power MOSFET 20V P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT2301ZL is a -20v P-channel enhancement mode Power MOSFET with fast switching speed, low on-resistance and favorable stabilization. It can be used in commercial and industrial

MOSFET

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2301Z Power MOSFET 20V P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT2301Z is a -20v P-channel enhancement mode Power MOSFET with fast switching speed, low on-resistance and favorable stabilization. It can be used in commercial and industrial

UT2301ZL

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2301Z Power MOSFET 20V P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT2301Z is a -20V P-channel enhancement mode Power MOSFET with fast switching speed, low on-resistance and favorable stabilization. It can be used in commercial and industrial

AAT7157

Abstract: AAT7157IAS-T1
Contextual Info: AAT7157 20V P-Channel Power MOSFET General Description Features The AAT7157 low threshold 20V, dual P-Channel MOSFET is a member of AnalogicTech's TrenchDMOS product family. Using an ultra-high density proprietary TrenchDMOS technology the AAT7157 is designed for use as a load switch in

TA 7157

Abstract: Dual P-Channel MOSFET AAT7157 AAT7157IAS-T1 P-channel POWER p-channel power mosfet 58a4
Contextual Info: AAT7157 20V P-Channel Power MOSFET General Description Features The AAT7157 low threshold 20V, dual P-channel MOSFET is a member of AnalogicTech's TrenchDMOS product family. Using an ultra-high density proprietary TrenchDMOS technology, the AAT7157 is designed for use as a load switch in

Contextual Info: CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES The CMT2301 is the P-Channel logic enhancement mode -20V/-2.3A ,RDS ON =130 mΩ@VGS=-4.5V power field effect transistors are produced using high cell -20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.5V

CMC lcd

Abstract: p-channel mosfet sot-23 P-Channel MOSFET 20V P-Channel Power MOSFET CMT2301 CMT2301GM233 CMT2301M233
Contextual Info: CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES The CMT2301 is the P-Channel logic enhancement mode -20V/-2.3A ,RDS ON =130 mΩ@VGS=-4.5V power field effect transistors are produced using high cell -20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.5V

MLP832

Abstract: ZXMP62M832 ZXMP62M832TA
Contextual Info: ZXMP62M832 MPPS Miniature Package Power Solutions DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY P-Channel V BR DSS = -20V; RDS(ON) = 0.6 ; ID= -1.0A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 30V N channel Trench MOSFET utilizes a unique structure

RD10

Abstract: AAT8113 AAT8113IAS-T1 diode BY 028 20V P-Channel Power MOSFET
Contextual Info: AAT8113 20V P-Channel Power MOSFET General Description Features The AAT8113 low threshold 20V, P-Channel MOSFET is a member of AnalogicTech 's TrenchDMOS™ product family. Using an ultra-high density proprietary TrenchDMOS technology the AAT8113 is designed for use as a load switch in

20V P-Channel Power MOSFET

Abstract: p-CHANNEL POWER MOSFET MARKING 8107 SOP8 8107 AAT8107 AAT8107IAS-T1
Contextual Info: AAT8107 20V P-Channel Power MOSFET General Description Features The AAT8107 low threshold 20V, P-Channel MOSFET is a member of AnalogicTech 's TrenchDMOS™ product family. Using an ultra-high density proprietary TrenchDMOS technology the AAT8107 is designed for use as a load switch in

RD10

Abstract: AAT8113 AAT8113IAS-T1
Contextual Info: AAT8113 20V P-Channel Power MOSFET General Description Features The AAT8113 low threshold 20V, P-Channel MOSFET is a member of AnalogicTech 's TrenchDMOS™ product family. Using an ultra-high density proprietary TrenchDMOS technology the AAT8113 is designed for use as a load switch in

CMC lcd

Abstract: sot-23 P-Channel MOSFET CMT2301 CMT2301GM233 CMT2301M233
Contextual Info: CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES The CMT2301 is the P-Channel logic enhancement mode ‹ -20V/-2.3A ,RDS ON =130 mΩ@VGS=-4.5V power field effect transistors are produced using high cell ‹ -20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.5V

UG 77A DIODE

Abstract: mosfet p-channel 300v MOSFET N-CH 200V DT92A international rectifier 137 IRF7317 ug 77A
Contextual Info: PD - 9.1568A International IGR Rectifier IRF7317 HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated N-CHANNEL MOSFET î _8 IS 2 Voss • & P-Ch 20V -20V

P-CHANNEL POWER MOSFET

Abstract: TA 7157 AAT7157 AAT7157IAS-T1 7157 mosfet
Contextual Info: AAT7157 20V P-Channel Power MOSFET General Description Features The AAT7157 low threshold 20V, dual P-Channel MOSFET is a member of AnalogicTech 's TrenchDMOS™ product family. Using an ultra-high density proprietary TrenchDMOS technology the AAT7157 is designed for use as a load switch in

utc 324

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.

LT2323E

Abstract: mosfet vgs 5v SOT23 LT232
Contextual Info: LT2323E P-Channel 20-V D-S MOSFET GENERAL DESCRIPTION FEATURES The LT2323E is the P-Channel logic enhancement mode power field ● -20V/-4A,RDS(ON)=50mΩ@VGS=-4.5V effect transistors are produced using high cell density, DMOS trench ● -20V/-3A,RDS(ON)=65mΩ@VGS=-2.5V

Contextual Info: AP4500GM RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 ▼ Low Gate Charge N-CH BVDSS D2 RDS ON D1 D1 ▼ Fast Switching Performance 20V 30mΩ ID G2 -20V P-CH BVDSS S2

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2301 Power MOSFET 2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2301 Power MOSFET 2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.

8107

Abstract: AAT8107 AAT8107IAS-T1 MARKING 8107 SOP8
Contextual Info: AAT8107 20V P-Channel Power MOSFET General Description Features The AAT8107 low threshold 20V, P-Channel MOSFET is a member of AnalogicTech's TrenchDMOS product family. Using an ultra-high density proprietary TrenchDMOS technology the AAT8107 is designed for use as a load switch in battery powered applications and protection in battery packs.

AAT8107

Abstract: AAT8107IAS-T1
Contextual Info: AAT8107 20V P-Channel Power MOSFET General Description Features The AAT8107 low threshold 20V, P-channel MOSFET is a member of AnalogicTech's TrenchDMOS product family. Using an ultra-high density proprietary TrenchDMOS technology, the AAT8107 is designed for use as a load switch in battery-powered applications and protection in battery packs.