20SEP04 Search Results
20SEP04 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT “ .— RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AD REVISIONS DIST 00 LTR B 0.070 THRU HOLE i ’C” SQ @ 7 17 @ §V « (o » ’C” SQ, IB il 20 0.062 SOLDER PAD |
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20SEP04 31MAR2000 | |
I22J
Abstract: RG-402 RG402 75 Ohm
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22J-51S, 930-I22J-5IS I5X-2042-1 20-Sep-04 I2-May-04 RG-402/ \QMA\930-1 I22J RG-402 RG402 75 Ohm | |
41698
Abstract: SUM110N02-03
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SUM110N02-03 O-263 SUM110N02-03--E3 S-41698--Rev. 20-Sep-04 41698 SUM110N02-03 | |
marking code vishay SILICONIX sot-23Contextual Info: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.060 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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Si2302ADS O-236 OT-23) Si2302ADS-T1 Si2302DS 08-Apr-05 marking code vishay SILICONIX sot-23 | |
SUU50N03-09PContextual Info: SUU50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters |
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SUU50N03-09P O-251 SUU50N03-09P--E3 Curre10 S-41696--Rev. 20-Sep-04 SUU50N03-09P | |
25C1024Contextual Info: SUM110N02-03 Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A)a 20 0.0026 @ VGS = 10 V 110a D D D D TrenchFETr Power MOSFET 175_C Junction Temperature Low Thermal Resistance Package High Threshold Voltage |
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SUM110N02-03 O-263 SUM110N02-03--E3 08-Apr-05 25C1024 | |
Contextual Info: Drwg. No. CU-120220-0161-K 2.18 MAX MINIMUM CONTACT FORCES SHOWN CARRIER CUT TOLERANCE +0.25N / -0.0 N OFF POINT INITIAL FORCE AT 215MM COMPRESSION : , ^ ^ , 1 I1 - h — l 7 I H \K SCALE INITIAL FORCE AT 2.35MM COMPRESSION 0.39N APPLYING LOAD] 0.32N IUNAPPLYING LOAD] |
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CU-120220-0161-K 215MM CU-120220-0210 24-May-05 | |
SUU50N03-09PContextual Info: SUU50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters |
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SUU50N03-09P O-251 SUU50N03-09P--E3 08-Apr-05 SUU50N03-09P | |
WinFlink.exe
Abstract: UM0050 programming 80c51 counter with 7 segment lcd UPSD3251F dongle diagram flow design UPSD325X uPSD32xx nec mcu ABEL-HDL Reference Manual cut template DRAWING
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UM0050 WinFlink.exe UM0050 programming 80c51 counter with 7 segment lcd UPSD3251F dongle diagram flow design UPSD325X uPSD32xx nec mcu ABEL-HDL Reference Manual cut template DRAWING | |
A016 SMD
Abstract: M8340102K smd marking code A008 smd A018 MDP1603 a015 SMD AC 31061 10k resistor array SIP a014 SMD transistor a015 SMD
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vsD-db0011-0410 A016 SMD M8340102K smd marking code A008 smd A018 MDP1603 a015 SMD AC 31061 10k resistor array SIP a014 SMD transistor a015 SMD | |
SUU50N03-09PContextual Info: SUU50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters |
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SUU50N03-09P O-251 SUU50N03-09P--E3 18-Jul-08 SUU50N03-09P | |
W46BAA
Abstract: Si4816DY Si4816DY-T1
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Si4816DY Si4816DY-T1 Si4816Dre S-41697--Rev. 20-Sep-04 W46BAA | |
Si2302ADS-T1
Abstract: Si2302ADS Si2302DS
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Si2302ADS O-236 OT-23) Si2302ADS-T1 Si2302DS S-41772--Rev. 20-Sep-04 |