20NC Search Results

IRFH7934TRPBF

Contextual Info: PD -97151 IRFH7934PbF HEXFET Power MOSFET Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC VDSS 30V RDS on max Qg 3.5m @VGS = 10V 20nC : Converters in Networking Systems Benefits

fta04n60

Abstract: fta*04n60 MOSFET 40A 600V N-Channel 600V MOSFET
Contextual Info: FTP04N60/FTA04N60 600V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 20nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 600V 2.2Ω 4.0A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS

mosfet 12V Motor CONTROLER

Abstract: SFS4936
Contextual Info: SFS4936 SemiWell Semiconductor Dual N-Channel MOSFET Features • ■ ■ ■ ■ Symbol Low RDS on (0.035Ω )@VGS=10V D2 5 4 G2 Low RDS(on) (0.053Ω )@VGS=4.5V D2 6 3 S2 Gate Charge (Typical 20nC) Improved dv/dt Capability Maximum Junction Temperature Range (150°C)

fqb6n60

Abstract: FQI6N60
Contextual Info: QFET N-CHANNEL FQB6N60, FQI6N60 FEATURES BV dss = 600V Advanced New Design R DS ON = 1 -5 i2 Avalanche Rugged Technology lD = 6.2A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 20nC (Typ.)

Contextual Info: PD -97151 IRFH7934PbF HEXFET Power MOSFET Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC VDSS 30V RDS on max Qg 3.5m @VGS = 10V 20nC : Converters in Networking Systems Benefits

mosfet 12V Motor CONTROLER

Abstract: SFS4936
Contextual Info: SFS4936 SemiWell Semiconductor Dual N-Channel MOSFET Features • ■ ■ ■ ■ Symbol Low RDS on (0.035Ω )@VGS=10V D2 5 4 G2 Low RDS(on) (0.053Ω )@VGS=4.5V D2 6 3 S2 Gate Charge (Typical 20nC) Improved dv/dt Capability Maximum Junction Temperature Range (150°C)

A709

Abstract: b0613 ASTM B633 zinc plating B633 HDP-20 A709A
Contextual Info: _ TOA9W6 ~HAOE IÑ THIRO t o ÀftQLE PROJECTION THIS O M M im 15 UNPUBLISHED. C0P1*!«NT 1« 1 RELEASED FOR PUBLICATION *V AMP fWCOWW A T B D . ALL IW TM M TIflNAL MOO ¡3?— m s r 2 BD 39 .73 AfflKTB H O CWMgD. R E V IS IO N S 20NC <M7e KSCRiPTiCN

N71001

Abstract: BDI37
Contextual Info: n m HAQg IN THIRD A m LC PROJCCTfON [*Hl£ D R A W I N G 1 5 U N P U B L I S H E D . BY A M P COPYRIGHT 19 INCORPORATED. mar ,19 RELEASED FOR PUBLICATION iiae lesisi 1 BD ¡37 ALL INTERNATIONAL RIGHTS RESERVED. REVISIONS 20NC OAT? oescRiprrek LTR APPO Ott/IC/SB

C0203

Abstract: WG 253 f 20mt AHP13469 C2901 C0701
Contextual Info: 4 M A K IN G fM OC IN IN M O W W LC PRO JECTIO N erst LOC THIS DRAWING IS UNPUBLISHED. | RELEASED FOR PUBLICATION ,19 <g COPYRIOffT 18 W AMP INCORPORATED. AU. INTERNATIONAL RIOHTS RfSBMSD. AF 5 0 p F 20NC REVISIONS 0E9CRIFTI0N LTR DATE c REDRAWN PER 0057-93

E10-43

Abstract: C0703 of 557
Contextual Info: o TH19 0 AMPLE PROJECTfOM QgAMlKC MAflg T H IS DRAWING I S UNPUBLISHED. RELEASED FOR PU 6 LIC A T I0 N BY AMP /NCOftPORATED. CÛPYRIONT fS MOO ,7 9 ALL JWTEHNATrOMAL RIQHTS RESERVED. tic 1 ¿1st 1 BD 3 / R E V IS IO N S P r \ \J 20NC OeSCRJPTlON LT» RED RAW N

Contextual Info: UniFETTM FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET, FRFET 600V, 6.5A, 1.35Ω Features Description • RDS on = 1.15mΩ ( Typ.) @ VGS = 10V, ID = 3.25A • Low gate charge ( Typ. 20nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

Contextual Info: QFET N-CHANNEL FQB6N60, FQI6N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 20nC Typ.

FQPF6N60

Contextual Info: QFET N-CHANNEL FQPF6N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 20nC Typ. • Extended Safe Operating Area

Contextual Info: IRFH7934PbF HEXFET Power MOSFET Applications l l VDSS 30V Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC RDS on max Qg 3.5m @VGS = 10V 20nC : Converters in Networking Systems Benefits l l l l l

Contextual Info: QFET N-CHANNEL FQB6N60, FQI6N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 20nC Typ.

Contextual Info: A OPAWIMS m o t IW THIHQ AM Lg TH IS DRAUING pnojscrioM IS UNPUBLISHED. o o p y r is h t RELEASED FOR P U B L IC A T IO N BY II AMP IN O M P M A T IO . A t l. LOC ,1 9 B IS T G INTEM lATIO NAL PID H TS M S f lt v e O . 14 R E V IS IO N S p w LT P 20NC REVISED PEP 0720-0230-93

MIL-T-1072

Abstract: AMP CPC series 2
Contextual Info: O DRAWING MAOE IN THIRD ANGLE PROJECTI ON THIS ORAtflNfi IS UNPUBLISHED. co pw j w r 1« 1 RELEASED FOR PUBLICATION •Y AMP NCÛMPÛftATSX A U . ÎKTEHWAfïÛNAL ,1 9 nr- moA . 23 A lfiN TS «SSetVSD. BBT" BD R E V IS IO N S 39 20NC LTR OATC D ESC RIPTIO N

108-10033

Contextual Info: o ka *., o uw MOO p ia r 80 1 39 R E V IS IO N S * r 20NC LT* V s> E 1 ÛATC K 9 C IU P TJ0 N REDRAWN & REVISED, ECN BD5681 REVISED PER ECN BD606S 1- 92 am « 1 AT 1 AT J 70 . 8 7 ± 0 . 0 8 C. 4 2 8 ± . 0033 TYP t 4 .8 3 J C. 190J TYP > > C A B L E G A T E NO

Contextual Info: SCS105KG SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 5A QC 20nC TO-220AC 1 (2) lFeatures (3) lInner circuit 1) Shorter recovery time (1) 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)

Contextual Info: UniFETTM FDP18N20F / FDPF18N20FT tm N-Channel MOSFET 200V, 18A, 0.14Ω Features Description • RDS on = 0.12Ω ( Typ.)@ VGS = 10V, ID = 9A • Low gate charge ( Typ. 20nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

Contextual Info: QFET N-CHANNEL FQP6N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 20nC Typ. • Extended Safe Operating Area

G1238

Contextual Info: * I M U M IM * MMX 1M THIRD AMOLE PMOJCCTION THIS OftAWfWG IS UNPUaLISHEO. COPYRIGHT 19 3 ~ I RELEASED FOR PUBLICATION BY AMP INCORPORATED. M X INTERNATIONAL - 2 V i toe *00 a 13 RJ4MV3 RESERVED. BD 1 I | REVISIONS 37 p \ p 20NC LTR c c s a ttP T io tt

Contextual Info: PD - 96226 IRF8734PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg (typ.) 30V 3.5m @VGS = 10V 20nC 1 8 S 2 7 S 3

d 9329

Abstract: r4373
Contextual Info: l PROJECTION go, I 1 aetgASgQ FO* PUflLJCATiON •V A HP OATC INCOf^OftArCO. LOC AD 25 ALL ¿MnHNATIONAL ftltMTS MTMÜVKO. APPO S/10/91 L SB LSB 12/90/» L SB S/2/S2 LSB S/28/33 LSB 2/7/94 LSB 3/25/94 LSB o:sr R E V IS IO N S p p LTH 20NC B : C D E • :5>