20N50, Search Results
20N50, Datasheets (12)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 20N50 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
| 20N50C1 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
| 20N50C1D | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
| 20N50C1D | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
| 20N50E1 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
| 20N50E1D | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.63KB | 1 | ||
20N50A
|
AK Semiconductor | 20A500V N-channel enhancement mode MOSFET with 20A continuous drain current, 500V drain-source voltage, 0.21 ohm typical on-resistance at 10V gate-source voltage, and low gate charge, available in TO-220F, TO-247, and TO-247S packages. | Original | ||||
SLP_F20N50S
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Maplesemi | 20A, 500V N-channel MOSFET with 185mΩ RDS(on) at VGS = 10V, low gate charge of 40nC, and 37W power dissipation in TO-220 package. | Original | ||||
SLF20N50S
|
Maplesemi | 500V N-channel MOSFET with 20A continuous drain current, 185mΩ typical RDS(on) at VGS = 10V, low gate charge of 40nC, and fast switching performance for high-efficiency power applications. | Original | ||||
SLF20N50C
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Maplesemi | 500V N-channel MOSFET with 20A continuous drain current, 200mΩ typical RDS(on) at VGS=10V, low gate charge of 90nC, and 33pF Crss, suitable for high-efficiency switching power conversion applications. | Original | ||||
SLH_W20N50S
|
Maplesemi | 500V N-Channel MOSFET with 20A continuous drain current, 185mΩ RDS(on) at VGS = 10V, low gate charge of 40nC, and 250W power dissipation capability in TO-247 or TO-3P package. | Original | ||||
MDD20N50F
|
Microdiode Semiconductor | 500V N-Channel Enhancement Mode MOSFET, VDS 500V, ID(Tc=25°C) 20A, RDS(on),max 0.29Ω@VGS=10V, Qg,typ 50.5nC, TO-220F-3L. | Original |
20N50, Price and Stock
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onsemi FDB20N50FMOSFET N-CH 500V 20A D2PAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDB20N50F | Digi-Reel | 6,978 | 1 |
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FDB20N50F | Tape & Reel | 8 Weeks | 800 |
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FDB20N50F | 4,787 |
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FDB20N50F | Cut Tape | 347 | 1 |
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FDB20N50F | 252 | 1 |
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FDB20N50F | 1 |
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FDB20N50F | 8 Weeks | 800 |
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FDB20N50F | 800 | 9 Weeks | 800 |
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FDB20N50F | 10 Weeks | 800 |
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Cal-Chip Electronics CHV2220N500105KXTHVCAP2220 X7R 1UF 10% 500V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CHV2220N500105KXT | Tape & Reel | 4,000 | 500 |
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Diodes Incorporated AP2120N-5.0TRG1IC REG LINEAR 5V 150MA SOT23-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AP2120N-5.0TRG1 | Cut Tape | 3,047 | 1 |
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AP2120N-5.0TRG1 | Tape & Reel | 3,000 |
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AP2120N-5.0TRG1 | 3,000 |
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AP2120N-5.0TRG1 | 9,000 | 14 Weeks | 3,000 |
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Kyocera AVX Components NB20N50104JBATHERM NTC 100KOHM 4160K 1206 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NB20N50104JBA | Cut Tape | 2,550 | 1 |
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NB20N50104JBA | Tape & Reel | 16 Weeks | 3,000 |
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NB20N50104JBA | 3,800 |
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NB20N50104JBA | Cut Tape | 465 | 5 |
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NB20N50104JBA | Bulk | 5 |
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NB20N50104JBA | Reel | 3,000 |
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NB20N50104JBA | Tape & Reel | 3,000 | 20 Weeks | 3,000 |
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NB20N50104JBA | 20 Weeks | 3,000 |
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Vishay Intertechnologies SIHA20N50E-E3MOSFET N-CH 500V 19A TO220 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHA20N50E-E3 | Tube | 994 | 1 |
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SIHA20N50E-E3 | Bulk | 1 |
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SIHA20N50E-E3 | Bulk | 909 | 1 |
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SIHA20N50E-E3 | Tube | 1,000 |
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SIHA20N50E-E3 | 21 Weeks | 50 |
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