20KV DIODE Search Results

Contextual Info: HVGT HVQL10MT200D 20kV 1.0A HIGH VOLTAGE DIODE MODULE Outline Drawings Unit: mm Features Diffused Junction High Voltage Capability High Case Dielectric Strength Low frequency High current Plastic Material has Underwriters Laboratory ~ ~ ~ Flammability Classification 94V-O

Contextual Info: HVGT HVP-20 20kV 750mA HIGH VOLTAGE DIODES Outline Drawings : mm HVP-SERIES HIGH VOLTAGE RECTIFIER BLOCKS WITH 38.5 0.8X6.3 MOUNTING SLOTS. HVGT 19.0 Features 6.5 Rectifier Blocks 76.2 42.0 7.5 www.getedz.com 4.0 High Voltage 19.0 Mounting 8.0 Slots Cathode Mark

Contextual Info: HVCA ESJA20-20 20mA 20kV HIGH VOLTAGE, SILICON RECTIFIER DIODES Outline Drawings : mm is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. ESJA20-20 Cathode Mark

Contextual Info: HVGT SHV-20 20kV 5mA HIGH VOLTAGE DIODES Outline Drawings : mm The SHV series of diodes have been miniaturized by resin on the assumption fo remolding. Measures against creeping discharge and humidity stress must Cathode Mark Lot No. be taken when using these diodes.

Contextual Info: HVGT HVRT200 20kV 30mA HIGH VOLTAGE DIODES Outline Drawings : mm HVRT200 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 3.0 o 0.6 Features

Contextual Info: HVGT HVRL200 20kV 30mA HIGH VOLTAGE DIODE Outline Drawings : mm HVRL200 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 4.2 o 0.8 Features

Contextual Info: HVCA G20FP 20kV 10mA HIGH VOLTAGE DIODES Outline Drawings : mm G20FP is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 3.0 o 0.6 Features

Contextual Info: HVCA HVRT200 20kV 30mA HIGH VOLTAGE DIODES Outline Drawings : mm HVRT is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 3.0 o 0.6 Features

2CL77

Contextual Info: HVCA 2CL77 5mA 20kV HIGH VOLTAGE DIODES Outline Drawings : mm 2CL77 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 3.0 o 0.6 Features

Contextual Info: HVGT HV-T77 20kV 5mA HIGH VOLTAGE DIODES Outline Drawings : mm HV-T77 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 3.0 o 0.6 Features

hvca CL03-12

Contextual Info: HVCA CL03-20 20kV 120mA HIGH VOLTAGE DIODE Outline Drawings : mm CL03-20 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 7.0 o 1.2 Features

opto isolator photodiode

Abstract: OPTO-ISOLATOR optoisolator high voltage, high current OPTO-ISOLATOR photo diode OPTO ISOLATOR high temperature 20KV OPI1268 OPL550 OPI1268S
Contextual Info: OPI1268S High Voltage / High Speed Opto-Isolator Features: Certifications: • • • • • • • • • • • 20KV Isolation 30 KV/uS dv/dt immunity 2 Mbit/s transfer rate tPHL-tPLH ≤ 50 ns Creepage path: 24 mm TTL Compatible 6 Axis / 10G load rating

Contextual Info: HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE—TVR20 This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits for

20kv diode

Abstract: ESJA53-20A HIGH VOLTAGE DIODE 20kv L#IF4
Contextual Info: 1, SCOPE This specification provide the ratings and the requirements for high voltage si Iicon diode ESJA53-20A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.

TDFN-16

Contextual Info: AOZ8020 8-Line EMI Filter with Integrated ESD Protection General Description Features The AOZ8020 is an 8-line device integrating EMI filtering with ESD protection for each line. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic discharge ESD protection in portable

Contextual Info: PRODUCT: SESD0402X1UN-0020-090 Single Channel DOCUMENT: SCD28186 REV LETTER: G REV DATE: MAY 15, 2013 PAGE NO.: 1 OF 6 Silicon ESD Protector 308 Constitution Drive Menlo Park, CA USA www.circuitprotection.com Overvoltage Protection Device Specification Status: RELEASED

Contextual Info: driving Automotive Selector Guide Semtech Automotive Solutions, helping you drive the future of automotive design with our Touch Controllers, Cable Drivers, Instrument Clusters, Key Fobs, Seatback Infotainment, Switching Regulators in EMI-Sensitive Console Applications,

zener diode 5v

Abstract: 3.5v zener diode 5v ZENER DIODE IEC1000-4-2 diode ZENER 6c
Contextual Info: UMZ6.8N Diodes Zener Diode UMZ6.8N !External dimensions Units: mm !Applications Constant voltage control For the ESD measure of a signal line 2.0±0.2 0.9±0.1 1.3±0.1 0.3 0.6 2.1±0.1 0~0.1 0.15±0.05 6C 0.3±0.1 0.1Min. !Features 1) Small surface mounting type (UMD3)

Contextual Info: Protection from Surge SMini-5pin T.V.S. Diode TV068E20W120 „ Overview Unit : mm Newly developed T.V.S. (Transient Voltage Suppressor) Diode with SMini-5pin package against lightning/ESD. 2.0±0.1 0.7 ±0.1 (0.65) ４ 5° • Industry‘s top level of Low Vc and High Ipp: Vc=8.8V typ.

Contextual Info: This m ni or i ni Bud he Inform ation liereln li ilia p r o f e r i r of rujl Electric C o.L id. They itiflll be nellhar re p r o d u c e d , c o p ie d , l e n t . or d ltc lo se d In stny way w h n lio e v e r lor the m t <>( an y llilrd party nor ut»d lor Mi« m ^nufA cturlng p u rp o se s w ilh « > (

Mil-Std-883D

Abstract: MIL-STD883D 60 diode DN046 diode 408
Contextual Info: これは英語版データシートからの翻訳であり正式なデータシートではありません。弊社はこの日本 語版のデータシートの誤りによるいかなる損害に関しても補償いたしません。製品の正式な仕様に

IEC1000-4-2

Contextual Info: STZ5.6N Diodes Zener Diode Array STZ5.6N !External dimensions Units : mm !Applications Constant voltage control For the ESD measure of a signal line 1.1+0.2 −0.1 2.9±0.2 1.9±0.2 0.8±0.1 2.8±0.2 0~0.1 6F Week manufactured 0.4 +0.1 −0.05 0.15+0.1 −0.06

HIGH VOLTAGE DIODE 6kv

Abstract: ESJA25-DG ESJA25-04 ESJA25-06 ESJA25-08 ESJA25-10 ESJA25-12 ESJA25-16 ESJA25-20 ESJA25
Contextual Info: COLLMER SEMICONDUCTOR INC 74 DE 1 25307^2 GODQSME S High voltage silicon rectifier diodes 5 m A avg., up to 20 kV E S J A 2 5 -G C 1 2238792 CO LLM FR S F M T r .n N n iir T n R Twr nur r in c iî n r - i Maximum ratings M a x im u m ratings T yp e Repetitive

"Isolation Amplifier"

Abstract: "Isolation Amplifiers" ISO176 ISO176P OPA602 1.8V op amp
Contextual Info: ISO176 ISO 176 Precision, Isolated OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● RATED 1500Vrms Continuous 2500Vrms for One Minute 100% TESTED FOR PARTIAL DISCHARGE ISO176 is a precision isolation amplifier incorporating an uncommitted operational amplifier for input conditioning, a novel duty cycle modulation-demodulation