20JUN2002 Search Results

A0-A21

Abstract: CR10 M58WR064EB M58WR064ET VFBGA56
Contextual Info: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

PA66-GF35

Abstract: PA66GF35
Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P LTR KEYING OPTIONS 2:1 KEYING OPTION B DWN APVD D1 REV PER ECR-10-012906 24JUN2010 VSS DZ D2 REVISED PER ECO-14-008755 11JUN2014

PSD3200

Abstract: BV-24 PSD834 ST24C21
Contextual Info: µPSD3200 FAMILY Flash Programmable System Device with 8032 Microcontroller Core PRODUCT PREVIEW FEATURES SUMMARY • The µPSD3200 Family combines a Flash PSD architecture with an 8032 microcontroller core ■ ■ The µPSD3200 Family of Flash PSDs features

Contextual Info: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

Contextual Info: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)