20CPC Search Results

Contextual Info: Bulletin 12031/B International I I]Rectifier 70/300U R .D SERIES STANDARD RECOVERY DIODES Stud Version Features D iffu sed d io d e W id e c u rre n t ra n g e High v o lta g e ra tin g s up to 1 6 0 0 V H igh s u rg e c u rre n t c a p a b ilitie s S tu d c a th o d e and stud a n o d e ve rs io n

mlm196

Abstract: A T350V LM396 t350V
Contextual Info: MLM196/M LM 396 10A ADJUSTABLE THREE TERMINAL POSITIVE REGULATORS C om m ercial or Screened to various test methods o f MIL-STD-883 BASIC 1.25V to 15V REGULATOR FEATURES • • • • • • • Dir# 1OA Guaranteed output current 100% Burn-in in thermal limit

Contextual Info: ENG FILE COPY K<fcfc .1 /I* ¿.-72 À SF2950-6042 NOTES: 1. MATING: In te r fa c e D im ensions Per Mil-C-39012/SMA S e r ie s and Solitron/M icrow ave MD-107. 2. MATERIALS: Body : C ontact: In s u la to r : 3• FINISH: Body: C on tact: S ta in le s s S te l p er QQ-S-764, Type 303,

z854

Abstract: CLT2030 CLT6053 CLT2020 CLT2035 T018
Contextual Info: CLAIREX ELECTRONICS »IV 21457TÏ 0000754 T ITE D T-Hhb CLT6053 Product Data CLT2020 CLT2030 CLT2035 Silicon NPN Planar Expitaxial Phototransistors GENERAL DESCRIPTION — The Clairex CLT6053, CLT2035, CLT2020 and CLT2030 are three terminal silicon NPN planar epitaxial phototransistors in a hermetic package.

2n3055

Abstract: MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier 2N3055 curve npn 2n3055 2n3055 collector characteristic curve 2N3055/MJ2955 MJ2955 MJ2955 TRANSISTOR
Contextual Info: COMPLEMENTARY SILICON POWER TRANSISTORS NPN 2N3055 .designed for use in general-purpose amplifier and switching applications PNP MJ2955 Boca Semiconductor Corp. BSC FEATURES: * Power Dissipation - PD = 115W @ Tc = 25°C * DC Current Gain hFE = 20 ~ 70 @ lc = 4.0 A

Contextual Info: CO M PO NENTS _ ; Impervious lead free vitreous enamel coating High purity ceramic substrate Based on thirteen tube sizes Can be supplied with fixed, adjustable, tapped or low inductance winding. Seven termination styles with choice of mounting arrangments

Contextual Info: K A E IO 7 1 9 9 ¿ > 7 2 ¿26 » < 2970-6002 NOTES: 1. MATING: Interface dimensions per Mil^C-39012/SMA Series and Sol itron/Microwave M D - 1 0 7 . 2. MATERIALS: Body, Hex Nut and Lockwasher: Contact : Insulator : Stainless Steel per Q Q ^S -7 64, Type 303, Cond. A.

Contextual Info: K * K I« 7I K 2-72 2IM- 2720-600Í NOTES: 1. MATIN G : Interface dimensions per Solitron/Microwave MD-114. 2. Ì-IG». MATERIALS: Body:. Contact: Crimp Ring:. Insulator :_ Stainless Steel per QQ-S-764, Type 303, Cond.A. Beryllium Copper per QQ-C-530, C o n d . H,

Contextual Info: K & E IO 71 *5 2-72 22M> SF 29 55—6030 en g file copy NOTES: 1. r.O'ZS MATING: . 0 3 0 MlKA.-OlA- y . IZ " D E E P Interface Dimensions p e r Mil-C-39012/SMA Series and Solitron/Microwave M D - 1 0 7 . 2. MATERIALS: All Metal pa rt s except Contact and Lock Ring:

Contextual Info: K M I« TIN 2.72 UM» 2950-6470 NOTES: 1. MATING: Interface dimensions per Mil-C-39012/SMA.Series and Solitron/Microwave MD-107. 2. MATERIALS: Body: Stainless Steel per QQ-S-764, Type 303, Cond. A. Contact: Beryllium Copper per QQ-C-530, Cond. H. Insulator : Teflon per M11-P-19468A.

aplx

Contextual Info: PA51 • PA51A AP E X M I C R O TEC J H NQ L OG V C ORP OR ATION • APP LIC AT IO N S HÜfLINt: 800 546 APLX ¡HÜÜ- 6 2 7 39 FEATURES • • • • • WIDE SUPPLY RANGE — ±10 to ±40V HIGH OUTPUT CURRENT — ±10A Peak SECOND SOURCEABLE — OPA501, 8785

2N3441

Contextual Info: ÆàMOSPEC NPN SILICON POWER TRANSISTOR NPN 2N3441 .2N3441 transistor is designed for use in general purpose switching and linear amplifier application requiring high breakdown voltages. FEATURES * * * * Driver for High Power Outputs Series and Shunt Regulators

Contextual Info: MLM196/MLM396 10A ADJUSTABLE THREE TERMINAL POSITIVE REGULATORS Commercial or Screened to various test methods of MIL-STD-883 BASIC 1.25V to 15V REGULATOR FEATURES • • • • • • • mn=^ 1OA Guaranteed output current 100% Burn-in in thermal limit

Contextual Info: Interconnection Systems Selection Guide 82750 Military Specified Circular Connectors Revised 7-95 MIL-C-38999 Series I , . , j . , , i f i l . j 1 This fam ily of c o n n e cto rs is o ffered in a variety of re ce p ta cle m ounting co n fig u ra tio n s. They in clude

Contextual Info: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s + 1N5629 + Series 1N5865A C 3 Y 3 0 M Control overpower ri k 1T 31.8 min. ¡1{5 .33 max. -» 7.5 9.0 25.4 min. l _I Smisibla PnxtèectSon MAXIMUM RATINGS When no problems exist, Oydom TVS • Peak pulse power (Ppk): 1500 watts

TCSW-0201

Contextual Info: I nrts- 7 / C '- - ^TACHONI ' CORPORAT * .s t ^ s r • Preliminary Data Sheet -4- / ' i -, March, 1987 Features: • Broad Bandwidth DC-4 GHz • Low VSWR in all states • Low Insertion Loss 1.7 dB typ. • High Isolation 20 dB typ. • Fast Switching Speed 2nS

2N6338

Abstract: 2N6340 2N6436 2N6437 2N6438
Contextual Info: HIGH-POWER PNP SILICON TRANSISTORS . designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High d c current Gain hFE=20-80 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage Vcbsat) = 1 ov (M ax ) @ lc = 10 A, lB = 1.OA

Contextual Info: K * E JO 71 SS 2 - 7 2 U N > SF1103-6001. NOTES: ± .0 2 5 1. M A TI N G : Interface dimensions per Mil-C-39012/SMA and TNC Series and Bolitron/Microwave MD-107 and MD-110. 2. MATERIALS: All metal parts except Contact and Lock Ring: Stainless Steel per QQ-S-764, Type 303, Cond. A.

MIL-C-39012 SMA

Contextual Info: - -f.T: • M t^ F œ .W fW æ ~ P K M 10 7 1 H X-7X & '■ I» « Ir SF 2997-mm. NOTES: 1. MATING: Jack: Interface Dimensions per Mil-C-39012/SMA Series and Solitron/Microwave MD-107. Plug slidm-on i 39012. MATERIALS: 2. Mates with all SMA: Jack per Mil-C-

eurofarad CTS

Abstract: Eurofarad capacitor film EUROFARAD capacitor polycarbonat
Contextual Info: CONDENSATEURS A USAGE PROFESSIONNEL GENERALITES CAPACITORS FOR PROFESSIONAL APPLICATIONS GENERAL INFORMATION EUROFARAD bénéficie d'une expérience de plus de 30 ans dans le EUROFARAD has more than 30 years experience in developing anc développem ent et la fabrication d'une ga m m e étendue de con de nsa­

LD50 VOLTAGE REGULATOR

Abstract: transistor LD50 LD33 VOLTAGE REGULATOR ld33 c LD50 sot23-5 ld33 sot-23 Marking 40g LD33 SOT23-5 LD33 3 PIN REGULATOR Marking LD25
Contextual Info: G eneral Description Featu res The MIC5206 is an efficient linear voltage regulator with very low dropout voltage typically 17mV at light loads and 165m V at 150mA , and very low ground current (BOO^A at 100mA output), with better than 1% initial accuracy. It has a logic

e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Contextual Info: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that

2N3441

Contextual Info: NPN SILICON POWER TRANSISTOR NPN 2N3441 .2N3441 transistor is designed for use in general purpose switching and linear amplifier application requiring high breakdown voltages. FEATURES * * * * Boca Semiconductor Corp. BSC http ://www.bocasemi.com Driver for High Power Outputs

2N6438

Abstract: 2N6338 2N6340 2N6436 2N6437
Contextual Info: ¿2&MOSPEC HIGH-POWER PNP SILICON TRANSISTORS . designed for use in industrial power amplifiers and switching circuit applications. PNP 2N6436 2N6437 2N6438 FEATURES: * High DC Current Gain hFE=20-80 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage