208 SP10 Search Results

2SK975

Abstract: 4AK25 SP-10 DSA003638
Contextual Info: 4AK25 Silicon N-Channel Power MOS FET Array ADE-208-1207 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance R DS(on) 0.45 , VGS = 10 V, I D = 1 A • Low drive current • High speed switching • High density mounting

ade 728

Abstract: 4AK27 SP-10 DSA003643
Contextual Info: 4AK27 Silicon N Channel MOS FET High Speed Power Switching ADE-208-728 Z 1st. Edition Mar. 2001 Features • Low on-resistance R DS(on) ≤ 0.15Ω, VGS = 10V, ID = 3.0A • 4V gate drive devices. • High density mounting Outline SP-10 3 D 2G 1 S 5 D 4

ade 728

Abstract: 4AK27 SP-10 Hitachi DSA00397
Contextual Info: 4AK27 Silicon N Channel MOS FET High Speed Power Switching ADE-208-728 Z 1st. Edition January 1999 Features • Low on-resistance R DS(on) ≤ 0.15Ω, VGS = 10V, ID = 3.0A • 4V gate drive devices. • High density mounting Outline SP-10 3 D 2G 1 S 5 D

4AK19

Abstract: SP-10 ADE-208-727 DSA003643
Contextual Info: 4AK19 Silicon N Channel MOS FET High Speed Power Switching ADE-208-727 Z 1st. Edition Feb. 1999 Features • Low on-resistance N Channel : R DS(on) 0.5 Ω, VGS = 10V, ID = 2.5A R DS(on) 0.6 Ω, VGS = 4V, ID = 2.5A • 4V gate drive devices. • High density mounting

4AM13

Abstract: SP-10 Hitachi DSA00316
Contextual Info: 4AM13 Silicon N-Channel/P-Channel Power MOS FET Array ADE-208-1211 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.4 , VGS = 10 V, I D = 1.5 A P-channel: RDS(on) ≤ 0.45 , VGS = –10 V, I D = –1.5 A

4AK20

Abstract: Hitachi motor driver mos die 2SK1300 2SK1305 SP-10 ED 03 Diode DSA003638
Contextual Info: 4AK20 Silicon N-Channel Power MOS FET Array ADE-208-1204 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A R DS(on) 0.35 , VGS = 4 V, I D = 2.5 A • Capable of 4 V gate drive

4ak19

Abstract: n-channel mos fet 4 V gate SP-10 Hitachi DSA00337
Contextual Info: 4AK19 Silicon N Channel MOS FET High Speed Power Switching ADE-208-727 Z 1st. Edition February 1999 Features • Low on-resistance N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A R DS(on) ≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A • 4 V gate drive devices.

Hitachi motor driver

Abstract: 2SK1254 4AK22 SP-10 Hitachi discrete DSA003638
Contextual Info: 4AK22 Silicon N-Channel Power MOS FET Array ADE-208-1206 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5 A R DS(on) 0.55 , VGS = 4 V, I D = 1.5 A • Capable of 4 V gate drive

ADE-208-1205

Abstract: Hitachi motor driver SP-10 2SK1302 2SK1307 4AK21 DSA003638
Contextual Info: 4AK21 Silicon N-Channel Power MOS FET Array ADE-208-1205 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance R DS(on) 0.09 , VGS = 10 V, I D = 4 A R DS(on) 0.12 , VGS = 4 V, I D = 4 A • Capable of 4 V gate drive

4AM11

Abstract: SP-10 Hitachi DSA00316
Contextual Info: 4AM11 Silicon N-Channel/P-Channel Power MOS FET Array ADE-208-1209 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.17 , VGS = 10 V, I D = 2.5 A P-channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –2.5 A

4AM12

Abstract: SP-10 Hitachi DSA00316
Contextual Info: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array ADE-208-1210 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.12 , VGS = –10 V, I D = –4 A

4AK18

Abstract: SP-10 DSA003638
Contextual Info: 4AK18 Silicon N-Channel Power MOS FET Array ADE-208-1203 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.38 , VGS = 10 V, I D = 1 A R DS(on) ≤ 0.53 , VGS = 4 V, I D = 1 A • Capable of 4 V gate drive

"Solenoid Driver"

Abstract: 4AK15 SP-10 DSA003638
Contextual Info: 4AK15 Silicon N-Channel Power MOS FET Array ADE-208-1200 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.07 , VGS = 10 V, I D = 8 A R DS(on) ≤ 0.095 , VGS = 4 V, I D = 8 A • Capable of 4 V gate drive

4AK17

Abstract: SP-10 ADE-208-1202 10A6 DSA003638
Contextual Info: 4AK17 Silicon N-Channel Power MOS FET Array ADE-208-1202 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.045 , VGS = 10 V, I D = 10 A R DS(on) ≤ 0.065 , VGS = 4 V, I D = 10 A • Capable of 4 V gate drive

SP100

Abstract: Photosensor
Contextual Info: PHOTOSENSOR METRONOME SP-100 2 1 3 4 6 8 7 5 10 • 9 OFF – 1. ON LED 72 OFF 160 • OFF ON • LED • 1. OFF + – • • ON OFF ON 1. 1-1 • 40 ~ 208 0 ·2 ·3 ·4 ·6 5 LED ±2% +23 ° C ON/OFF 2 +5 ° C ~ +35 ° C JIS 30 · SP100 : R6P 2 80 78 (W) x 167 (H) x 52 (D) ·mm 240g

SP10200S

Contextual Info: SP10200S Voltage 200V 10.0 Amp Schottky Barrier Rectifier Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies and halogen free ITO-220A FEATURES      Fast switching for high efficiency Low forward voltage drop High current capability

SP1040

Contextual Info: SP1040 Voltage 40V 10.0 Amp Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free ITO-220 FEATURES      B Low forward voltage drop High current capability High reliability High surge current capability

SP10150

Contextual Info: SP10150 Voltage 150 V 10.0 Amp Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free ITO-220 FEATURES      Low forward voltage drop High current capability High reliability High surge current capability

Contextual Info: SP1060 Voltage 60V 10 Amp Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free ITO-220 FEATURES      B Low forward voltage drop High current capability High reliability High surge current capability

SP10200

Contextual Info: SP10200 Voltage 200V 10.0 Amp Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free FEATURES       ITO-220 Low forward voltage drop Low reverse current High current capability

SP10100

Abstract: ITO-220
Contextual Info: SP10100 VOLTAGE 100 V 10.0 Amp Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free ITO-220 10 0.5 0.2 0.1 3.2 4.5 0.2 2.9 0.3  0.3 1.3 15 0.2 3.7  13Min  Low forward voltage drop

SP10100

Abstract: ITO-220
Contextual Info: SP10100 VOLTAGE 100 V 10.0 Amp Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free ITO-220 10 0.5 0.2 0.1 3.2 4.5 0.2 2.9 0.3 z 0.3 1.3 15 0.2 3.7 z 13Min z Low forward voltage drop High current capability

sp10150

Abstract: ITO-220 SP1015
Contextual Info: SP10150 VOLTAGE 150 V 10.0 Amp Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free ITO-220 B FEATURES      Low forward voltage drop High current capability High reliability

SP10100

Contextual Info: SP10100 Voltage 100V 10.0 Amp Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free ITO-220 FEATURES      Low forward voltage drop High current capability High reliability High surge current capability