205N10LS Search Results
205N10LS Price and Stock
Infineon Technologies AG BSC205N10LS-GMOSFET N-CH 100V 7.4A/45A TDSON |
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BSC205N10LS-G | Digi-Reel | 1 |
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Infineon Technologies AG BSC205N10LSGATMA1Power Field-Effect Transistor, 7.4A, 100V, 0.0205ohm, N-Channel, MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSC205N10LSGATMA1 | 3,500 | 1 |
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Infineon Technologies AG BSC205N10LSGDiscontinued |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSC205N10LSG | 1,734 |
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205N10LS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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JESD22Contextual Info: 205N10LS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 20.5 mΩ ID 45 A • Very low on-resistance R DS(on) • 150 °C operating temperature |
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BSC205N10LS 205N10LS JESD22 | |
IEC61249-2-21
Abstract: JESD22 PG-TDSON-8
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BSC205N10LS IEC61249-2-21 205N10LS IEC61249-2-21 JESD22 PG-TDSON-8 | |
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Contextual Info: 205N10LS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 20.5 mΩ ID 45 A • Very low on-resistance R DS(on) • 150 °C operating temperature |
Original |
BSC205N10LS 205N10LS |