2052B Search Results

Contextual Info: 2SK1428 2052B AP A d v a n c e d P e rfo rm a n c e Series VDSs = 1 0 0 V N Channel Power M OSFET F eatu res • Low ON-state resistance. • Very high-speed switching. • Converters. A bsolute M axim um R atings at T a= 25°C Drain to Source Voltage Vdss

2052B

Contextual Info: 2SK1439 2052B A P A dvanced Perfo rm ance Series Voss = 4 5 0 V N Channel Power M O S F E T F eatures • Low ON-state resistance. • Very high-speed switching. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage VDSS Gate to Source Voltage

k 1441

Contextual Info: 2SK1441 2052B AP A d va n ce d P e rfo rm a n c e Series Voss = 4 5 0 V N Channel Pow er M O S F E T F eatures • Low ON-state resistance. • Very high-speed switching. A bsolute M axim um R atings at T a= 25°C Drain to Source Voltage Vdss Gate to Source Voltage

Contextual Info: 2SK1052 2052B AP A d va n ce d P e rfo rm a n c e Series Voss = 4 5 0 V N Channel Power MOSFET 3439 Features • Low ON-state resistance. •Very high-speed Switching. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage

Contextual Info: 2SK1439 2052B A P A d v a n c e d P e r f o r m a n c e S e r ie s V dss — 4 5 0 V N Channel Power M OSFET 3442 Features • Low ON-state resistance. • Very high-speed switching. A bsolute M axim um R atings at T a= 25°C Drain to Source Voltage

Contextual Info: 2SK1438 2052B AP A d va n ce d P e rfo rm a n c e Series V dss = 4 5 0 V N Channel Power MOSFET 3441 F eatures • Low ON-state resistance. • Very high-speed switching. A bsolute M axim um R atings at Ta=25°C Drain to Source Voltage Vdss Gate to Source Voltage

2052B

Abstract: X-6618
Contextual Info: 2SK1417 2052B AP A d va n c e d P e rfo rm a n c e Series V dss = 6 0 V N Channel Power MOSFET E3555 F e a tu re s •Low ON-state resistance • Very high-speed switching. • Converters. A b so lu te M axim um R atin g s at Ta = 25°C Drain to Source Voltage

Contextual Info: 2SK1427 A P A d v a n c e d P e rfo rm a n c e S e rie s 2052B V dss — 1 o o v N Channel Power M OSFET F eatures • Low ON-state resistance. • Very high-speed switching. • Converters. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage

Contextual Info: 2SK1455 2052B U H Ultrahigh Voltage S eries V DSs = 9 0 0 V N Channel Power MOSFET F e a tu re s • Low ON-state resistance. • Very high-speed switching. • Converters. A bso lu te M axim um R atin g s at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage

2052B

Abstract: 2sK1440
Contextual Info: 2SK1440 AP A d va n ce d P e rfo rm a n c e Series V dss = 4 5 0 V 2052B N Channel Power MOSFET F e a tu re s • Low ON-state resistance. • Very high-speed switching. A bso lu te M axim um R atin g s a t Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage

Contextual Info: 2SK1418 2052B AP A d v a n c e d P e rfo rm a n c e Series V Dss = 6 0 V N Channel Power M O SFET F e a tu r e s • Low O N -state resistance. • V ery high-speed sw itching. • C onverters. A b s o lu te M a x im u m R a tin g s a t T a = 25°C D rain to Source Voltage

2SK1053

Contextual Info: 2SK1053 2052B AP A d va n ce d P e rfo rm a n ce Series V Dss = 4 5 0 V N Channel Power MOSFET 3440 F e a tu re s • Low ON-state resistance. • Very high-speed switching. A bso lu te M axim um R atin g s at Ta=25°C Drain to Source Voltage Vdss Gate to Source Voltage

431i

Contextual Info: 2SK1922 A P A dvanced Perform ance Series 2052B V dss = 600V N Channel Power M O S F E T E 431I F e a tu re s • Low ON resistance. • Very high-speed switching. • High-speed diode (trr= 100ns). A b so lu te M axim um R atin g s a tT a = 25°C D rain to Source Voltage

C085

Contextual Info: 2SK1923 AP A d va n ce d P e rfo rm a n c e Series 2052B DSS = 6 0 0 V N Channel Power M OSFET £4312 F e a tu re s • Low ON resistance. • Very high-speed switching. • H igh-speed diode (trr = 120ns).

diode 2u

Contextual Info: 2SK1052 2052B AP A d va n c e d P e rfo rm a n c e Series V dss = 4 5 0 V N Channel Power M OSFET '£'3439 F eatu res • Low ON-state resistance. •Very high-speed switching. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage

LM 328 ic

Abstract: 2SK1053
Contextual Info: 2SK1053 AP A d va n c e d P e rfo rm a n ce Series 2052B V DSs= 4 5 0 V IM Channel Power M OSFET F e a tu r e s • Low O N -state resistance. • Very high-speed switching. A b s o lu te M a x im u m R a tin g s a t D rain to Source V oltage G ate to Source Voltage

2SK1456

Contextual Info: 2SK1456 2052B U H U ltra h ig h V o lta g e S eries VDSs = 9 0 0 V N Channel Power M OSFET X 3459 F e a tu re s • Low ON-state resistance. • Very high-speed switching. •Converters. A bso lu te M axim um R atin g s at Ta = 25°C Drain to Source Voltage

Contextual Info: 2SK1924 AP A d va n ce d P e rfo rm a n c e S eries V dss = 6 0 0 V 2052B N Channel Power M OSFET .E 43 i 3 F e a tu re s •Low ON resistance. • Very high-speed switching. ■High-speed diode ( tr r = 140ns). A b so lu te M ax im u m R a tin g s a tT a = 25°C

2052B

Abstract: C345
Contextual Info: 2SK1442 2052B AP A d v a n c e d P e rfo rm a n c e Series V dss = 4 5 0 V N Channel Power M OSFET F e a tu re s • Low ON-state resistance. • Very high-speed switching. A b so lu te M axim um R a tin g s a t T a= 25°C Drain to Source Voltage V d ss

ST K 3567

Abstract: K 3567
Contextual Info: 2SK1429 AP A d va n c e d P e rfo rm a n ce Series V DSS= 1 0 0 V N Channel Power M OSFET •£■3567 Features • Low ON-state resistance. • Very high-speed switching. • Converters. Absolute Maximum Ratings at Ta = 25°C unit Drain to Source Voltage

AX-9832

Contextual Info: 2SK1921 AP A d va n ce d P e rfo rm a n c e Series V d 5s = 2 5 0 V N Channel Power M OSFET 4310 F eatures - Low ON resistance. • Very high-speed switching. • Low-voltage drive. bsolute M axim um R atings atTa=25°C Drain to Source Voltage V d ss

2SK1427

Abstract: 2052B
Contextual Info: O rd e rin g n u m b e r: E N 3 5 6 5 _ 2SK1427 No. 3565 N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatures • Low ON-state resistance. • Very high-speed switching. • Converters. A bsolute M aximum R atings at Ta = 25°C

2SK1439

Abstract: 34423
Contextual Info: O rdering n u m b e r:E N 3 4 4 2 2SK1439 No. 3442 N-Channel MOS Silicon FET SAÈÊYO i Very High-Speed Switching Applications F eatu res • Low ON-state resistance. • Very high-speed switching. A bsolute M aximum R atings at Ta=25°C Drain to Source Voltage

2SK1416

Abstract: 35542
Contextual Info: Ordering number : EN35554 _ 2SK1416 No.3554 N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatures •Low ON-state resistance • Very high-speed switching • Converters. A bsolute M aximum R atings at Ta=25°C Drain to Source Voltage