2012 FOOTPRINT DIMENSION Search Results

BGA925L6

Abstract: 925L BGA925
Contextual Info: BGA925L6 Silicon Germanium GNSS Low Noise Amplifier in ultra small package with 0.77mm² footprint Data Sheet Revision 3.0, 2012-01-13 RF & Protection Devices Edition 2012-01-13 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG

Contextual Info: BGA925L6 Silicon Germanium GNSS Low Noise Amplifier in ultra small package with 0.77mm² footprint Data Sheet Revision 3.0, 2012-01-13 RF & Protection Devices Edition 2012-01-13 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG

Contextual Info: BGA725L6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS in ultra small package with 0.77mm² footprint Data Sheet Revision 2.0, 2012-03-09 Preliminary RF & Protection Devices Edition 2012-03-09 Published by Infineon Technologies AG

BGA725L6

Abstract: gps trimble glonass gps TSLP-6 lna 2.5 GHZ s parameter ads design
Contextual Info: BGA725L6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS in ultra small package with 0.77mm² footprint Data Sheet Revision 2.0, 2012-03-09 Preliminary RF & Protection Devices Edition 2012-03-09 Published by Infineon Technologies AG

2012 footprint dimension

Abstract: RFBPF2012090A1T WALSIN 0805 2012 size footprint 0805 Walsin 0805 footprint dimension RFBPF 0805 size footprint
Contextual Info: Walsin Technology Corporation ‘ Multi Layer Ceramic Band Pass Filter- 0805 2012 size RFBPF2012090A1T Series-Low Profile Design For ISM Band 2.4GHz Application FEATURES CONSTRUCTION 3 Miniature footprint: 2.0 X 1.2 X 0.9 mm . Outline of 2.4GHz Band Pass Filter 0805(2012) size

Contextual Info: CSD13303W1015 www.ti.com SLPS298A – MAY 2012 – REVISED MAY 2012 N-Channel NexFET Power MOSFET Check for Samples: CSD13303W1015 FEATURES 1 • • • • • • • • PRODUCT SUMMARY Ultra Low on Resistance Ultra Low Qg and Qgd Small Footprint Low Profile 0.62 mm Height

Contextual Info: CSD13303W1015 www.ti.com SLPS298A – MAY 2012 – REVISED MAY 2012 N-Channel NexFET Power MOSFET Check for Samples: CSD13303W1015 FEATURES 1 • • • • • • • • PRODUCT SUMMARY Ultra Low on Resistance Ultra Low Qg and Qgd Small Footprint Low Profile 0.62 mm Height

Contextual Info: CSD13303W1015 www.ti.com SLPS298A – MAY 2012 – REVISED MAY 2012 N-Channel NexFET Power MOSFET Check for Samples: CSD13303W1015 FEATURES 1 • • • • • • • • PRODUCT SUMMARY Ultra Low on Resistance Ultra Low Qg and Qgd Small Footprint Low Profile 0.62 mm Height

Contextual Info: CSD13303W1015 www.ti.com SLPS298A – MAY 2012 – REVISED MAY 2012 N-Channel NexFET Power MOSFET Check for Samples: CSD13303W1015 FEATURES 1 • • • • • • • • PRODUCT SUMMARY Ultra Low on Resistance Ultra Low Qg and Qgd Small Footprint Low Profile 0.62 mm Height

Contextual Info: CSD13303W1015 www.ti.com SLPS298A – MAY 2012 – REVISED MAY 2012 N-Channel NexFET Power MOSFET Check for Samples: CSD13303W1015 FEATURES 1 • • • • • • • • PRODUCT SUMMARY Ultra Low on Resistance Ultra Low Qg and Qgd Small Footprint Low Profile 0.62 mm Height

sac 305

Contextual Info: "High Frequency Ceramic Solutions" 2.4GHz High Rejection BPF with LGA-type terminations for reduced effective footprint Detail Specification: Page 1 of 2 9/7/2012 General Specifications Part Number Frequency MHz Attenuation (db) P/N 2450BP15Q0100 2450BP15Q0100

Contextual Info: BGS12SL6 0.1 - 6.0 GHz SPDT Switch in ultra small package with 0.77mm2 footprint Data Sheet Revision 1.1, 2013-10-22 Final Power Management & Multimarket Edition October 22, 2013 Published by Infineon Technologies AG 81726 Munich, Germany c 2012 Infineon Technologies AG

Contextual Info: BGS12SL6 0.1 - 6.0 GHz SPDT Switch in ultra small package with 0.77mm2 footprint Data Sheet Revision 1.2, 2014-05-23 Final Power Management & Multimarket Edition May 23, 2014 Published by Infineon Technologies AG 81726 Munich, Germany c 2012 Infineon Technologies AG

MDT2012-CR1R0NDD

Contextual Info: AEC-Q200 Compliant MDT2012-CR Type Multilayer Ceramic chip power inductor DESCRIPTION ・The TOKO MDT2012 Series is an extremely low profile and miniature size multilayer ceramic chip power inductor with a maximum height of 1.0mm and with 2012 footprint 2.0mmx1.25mm .

Contextual Info: AN11183 Mounting and soldering of RF transistors in over-molded plastic packages Rev. 1 — 6 November 2012 Application note Document information Info Content Keywords Over-Molded Plastic OMP packages, heat sink, footprint, surface mount, reflow soldering, component handling, exposed heat spreader, SMDP,

Contextual Info: CSD75301W1015 www.ti.com SLPS212C – AUGUST 2009 – REVISED MARCH 2012 P-Channel NexFET Power MOSFET Check for Samples: CSD75301W1015 FEATURES 1 • • • • • • • PRODUCT SUMMARY Dual P-Ch MOSFETs Common Source Configuration Small Footprint 1mm x 1.5mm

Contextual Info: BGS12PL6 General purpose RF CMOS power SPDT Switch in ultra small package with 0.77mm2 footprint Data Sheet Revision 2.3, 2014-04-01 Power Management & Multimarket Edition April 1, 2014 Published by Infineon Technologies AG 81726 Munich, Germany c 2012 Infineon Technologies AG

Contextual Info: CSD75301W1015 www.ti.com SLPS212C – AUGUST 2009 – REVISED MARCH 2012 P-Channel NexFET Power MOSFET Check for Samples: CSD75301W1015 FEATURES 1 • • • • • • • PRODUCT SUMMARY Dual P-Ch MOSFETs Common Source Configuration Small Footprint 1mm x 1.5mm

Contextual Info: BGS12PL6 General purpose RF CMOS power SPDT Switch in ultra small package with 0.77mm2 footprint Data Sheet Revision 2.0, 2013-08-09 Power Management & Multimarket Edition August 9, 2013 Published by Infineon Technologies AG 81726 Munich, Germany c 2012 Infineon Technologies AG

Contextual Info: BGS12PL6 General purpose RF CMOS power SPDT Switch in ultra small package with 0.77mm2 footprint Data Sheet Revision 2.1, 2013-11-29 Power Management & Multimarket Edition November 29, 2013 Published by Infineon Technologies AG 81726 Munich, Germany c 2012 Infineon Technologies AG

Contextual Info: BGS12PL6 General purpose RF CMOS power SPDT Switch in ultra small package with 0.77mm2 footprint Data Sheet Revision 2.4, 2014-05-27 Power Management & Multimarket Edition May 27, 2014 Published by Infineon Technologies AG 81726 Munich, Germany c 2012 Infineon Technologies AG

Contextual Info: CSD13201W10 www.ti.com SLPS306 – MAY 2012 N-Channel NexFET Power MOSFET Check for Samples: CSD13201W10 FEATURES 1 • • • • • • • PRODUCT SUMMARY Ultra Low Qg and Qgd Small Footprint 1mm x 1mm Low Profile 0.62mm Height Pb Free RoHS Compliant

BR1112H

Abstract: DG1112H PG1112H PY1112H pcb warpage* in smt reflow pcb warpage after reflow BG1112H 1112H AA1112H AY1112H
Contextual Info: Product Guide 1112H Series Thin Type SMT LED • Features ■ Applications • Meets industry standards for 2012 0806 footprint • 2.0mm (L) x 1.25mm (W) x 0.8mm (H) • 1112H is 50% thinner than the W series. • Membrane switch panels • Backlighting

PG1112H

Abstract: BR1112H PY1112H 1112H AA1112H AY1112H BG1112H
Contextual Info: Product Guide 1112H Series Thin Type SMT LED • Features ■ Applications • Meets industry standards for 2012 0806 footprint • 2.0mm (L) x 1.25mm (W) x 0.8mm (H) • 1112H is 50% thinner than the W series. • Membrane switch panels • Backlighting