200MJ Search Results

ignition coil

Contextual Info: ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT General Description Applications The ISL9V2040D3S, ISL9V2040S3S, and ISL9V2040P3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak TO-252 , as well as the

Contextual Info: Panasonic Power F-MOS FETs 2SK2032 Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed : EAS > 200mJ Vgss=±30V guaranteed High-speed switching : t|= 90ns No secondary breakdown 5.0+0.2 3.2 ■ Applications

2SK2032

Contextual Info: Power F-MOS FETs 2SK2032 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 200mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 90ns ● No secondary breakdown unit: mm ● Contactless relay ● Diving circuit for a solenoid

IGBT DRIVER ignition coil automotive

Abstract: ISL9V2040D3S ISL9V2040P3 ISL9V2040S3S V2040S
Contextual Info: ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT General Description Applications The ISL9V2040D3S, ISL9V2040S3S, and ISL9V2040P3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak TO-252 , as well as the

Contextual Info: ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT General Description Applications The ISL9V2040D3S, ISL9V2040S3S, and ISL9V2040P3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak TO-252 , as well as the

Contextual Info: Power F-MOS FETs 2SK2032 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 200mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 90ns ● No secondary breakdown unit: mm 5.0±0.2 3.2 φ3.2±0.1 2.0±0.2

ISL9V2040D3S

Abstract: ISL9V2040P3 ISL9V2040S3S IGBT DRIVER ignition coil automotive
Contextual Info: ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT General Description Applications The ISL9V2040D3S, ISL9V2040S3S, and ISL9V2040P3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak TO-252 , as well as the

TO-252AA FAIRCHILD

Abstract: automotive ignition coil on plug ISL9V2040S3S ISL9V2040D3S ISL9V2040P3
Contextual Info: ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT General Description Applications The ISL9V2040D3S, ISL9V2040S3S, and ISL9V2040P3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak TO-252 , as well as the

Contextual Info: Data Sheet 6.051-G International I«R Rectifier IR6226 INTELLIGENT HIGH SIDE MOSFET POWER SWITCH Features Vcc op 5 -5 0 V Rds(on) lO O m ft 20A llim Tj(sd) 1 7 0 °C 200mJ ä Current Limit for Short Circuit Protection Over-Temperature Protection Active Output Negative Clamp

MJ 03 AI

Abstract: DARLINGTON TRANSISTOR ARRAYS 2A PU3122 PU4122 PU4422
Contextual Info: Power Transistor Arrays PU3122, PU4122, PU4422 PU3122, PU4122, PU4422 Package Dim ensions PU3122 Unit^mm Eq sh » Pow er Amplifier, Switching Built-in 30V Zener diode b etw een C and B V ery small fluctuation in breakdown voltage Large en ergy handling capability: Es/b=200mJ m in.

V2040P

Abstract: IGBT DRIVER ignition coil automotive automotive ignition coil on plug ISL9V2040D3S ISL9V2040P3 ISL9V2040S3S automotive ignition coil
Contextual Info: ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT General Description Applications The ISL9V2040D3S, ISL9V2040S3S, and ISL9V2040P3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak TO-252 , as well as the

Contextual Info: 2SK2032 Power F-MOS FETs 2SK2032 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed : EAS > 200mJ ● No switching : tf= 90ns secondary breakdown ■ Applications ● Non-contact ● Solenoid ● Motor relay drive ø3.2±0.1

Contextual Info: ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 EcoSPARKŠ 200mJ, 400V, N-Channel Ignition IGBT General Description Applications The ISL9V2040D3S, ISL9V2040S3S, and ISL9V2040P3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak TO-252 , as well as the

2SK2032

Contextual Info: Power F-MOS FETs 2SK2032 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 200mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 90ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm

TDE1898CDP

Abstract: SO20 TDE1897C TDE1897CDP TDE1897CFP TDE1898C TDE1898CFP TDE1898CSP
Contextual Info: TDE1897C TDE1898C 0.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH PRELIMINARY DATA 0.5A OUTPUT CURRENT 18V TO 35V SUPPLY VOLTAGE RANGE INTERNAL CURRENT LIMITING THERMAL SHUTDOWN OPEN GROUND PROTECTION INTERNAL NEGATIVE VOLTAGE CLAMPING TO VS - 45V FOR FAST DEMAGNETIZATION

IR6224

Contextual Info: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet 6.050 IR6224 INTELLIGENT HIGH SIDE MOSFET POWER SWITCH Features • · · · · · · · · · PWM Current Limit for Short Circuit Protection Over-Temperature Protection Active Output Negative Clamp

IPS521 applications note

Abstract: IPS521 IPS521S IR6226 IR6226S SMD220
Contextual Info: Data Sheet 60051-H IR6226 NOTE: For new designs, we recommend IR’s new products IPS521 and IPS521S INTELLIGENT HIGH SIDE MOSFET POWER SWITCH Product summary Vcc(op) 5-50V Features • • • • • • • • • • Current limit for short circuit protection

MN638S

Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

6050G

Contextual Info: Data Sheet 6.050-G International I« R Rectifier IR6224 INTELLIGENT HIGH SIDE MOSFET POWER SWITCH Features General Description The IR6224 is a 5 terminal monolithic HIGH SIDE SWITCH with built in short circuit, over- tem perature, ESD protections, inductive load turn off capability and diagnostic feedback.

l5010

Contextual Info: P r i'lim in a r y In te rn a tio n a l IO R Rectifier D a ta S h e e t 6 .0 5 1 A IR6226 INTELLIGENT HIGH SIDE MOSFET POWER SWITCH F eatures • C u rr e n t L m m lo r .Short C ir c u it P ro te c tio n • O v e r - T e m p e r ; i u r e v c c (o p 5 v-5 0 v

Contextual Info: 2SK2377 Power F-MOS FETs 2SK2377 Silicon N-Channel Power F-MOS Unit : mm ● High-speed ● No ON-resistance 16.7±0.3 ● Low switching secondary breakdown ● Low-voltage drive 4.2±0.2 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 energy capability guaranteed 7.5±0.2

transistor b1154

Abstract: B1154 10PE1 2N2962 2N1103 ASY13-2 GET116 2SC5220 AFY11 ASY12
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: /Z T * 7 /. S G S -T H O M S O N S ffllW ilL E lg'im M D g l TD E1897C TD E1898C 0.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH PRELIMINARY DATA • . . ■ . ■ . . ■ ■ ■ 0.5A OUTPUT CURRENT 18V TO 35V SUPPLY VOLTAGE RANGE INTERNAL CURRENT LIMITING

Thyristor 6kV

Abstract: PHE830 thyristor control circuit welding circuits principle thyristor regulator EN132400 IEC384-14 PHE820 triac inductor noise suppression
Contextual Info: Issued March 1997 232-6001 Data Pack K Suppression capacitorsA technical overview Data Sheet Introduction Most electrical and electronic equipment generates some form of Electromagnetic Inference, EMI. The high frequency EMI energy is "coupled" to the electronic circuits via cabling and other metal parts