200A 600V FET Search Results
200A 600V FET Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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51746-10505200A0LF |
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PwrBlade®, Power Supply Connectors, 5P 52S Vertical Receptacle. | |||
51742-11301200AALF |
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PwrBlade®, Power Supply Connectors, 13P 12S Vertical Receptacle. | |||
51706-10703200A0LF |
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PwrBlade®, Power Supply Connectors, Vertical Header, No Guide Post 7P 32S | |||
51742-11001200AALF |
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PwrBlade®, Power Supply Connectors, 10P 12S Vertical Receptacle. | |||
51722-10403200AALF |
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PwrBlade®, Power Supply Connectors, 4P 32S Right Angle Header. |
200A 600V FET Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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tlp250
Abstract: 212J igbt drive tlp250
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OCR Scan |
TLP250 TLP250 5-35V 2500Vrms 212J igbt drive tlp250 | |
FGH60N60SMD-F085
Abstract: FGH60N60SMD_F085 FGH60N60
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FGH60N60SMD 175oC FGH60N60SMD-F085 FGH60N60SMD_F085 FGH60N60 | |
RHR660
Abstract: RHRD660S9A
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RHRD660S9A 175oC RHR660 | |
TA49059
Abstract: rhrp TA4905
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RHRP860 TA49059. TA49059 rhrp TA4905 | |
Contextual Info: RHRP860_F085 September 2011 Data Sheet 8A,600V Hyperfast Diodes Features The RHRP860_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction. |
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RHRP860 175oC | |
Contextual Info: RHRD660S9A_F085 Data Sheet July 2011 6A, 600V Hyperfast Diodes Features The RHRD660S9A_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. |
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RHRD660S9A | |
Contextual Info: RHRD660S9A_F085 Data Sheet May 2013 6A, 600V Hyperfast Diodes Features The RHRD660S9A_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. |
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RHRD660S9A 175oC | |
rhr660Contextual Info: RHRD660S9A_F085 Data Sheet May 2013 6A, 600V Hyperfast Diodes Features The RHRD660S9A_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. |
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RHRD660S9A 175oC rhr660 | |
V23990-P305-B-PM
Abstract: tyco igbt V23990-P305-B
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V23990-P305-B-PM D81359 V23990-P305-B-PM tyco igbt V23990-P305-B | |
fgb7n60u
Abstract: 12v fan motor marking I58
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FGB7N60UNDF FGB7N60UNDF O-263AB/D2-PAK fgb7n60u 12v fan motor marking I58 | |
600v 10A ultra fast recovery diode to220
Abstract: ULTRA FAST diode 400v 5a
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FGP10N60UNDF FGP10N60UNDF O-220 600v 10A ultra fast recovery diode to220 ULTRA FAST diode 400v 5a | |
FGPF15N60UNDF
Abstract: fgpf15n60 600v 15a
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FGPF15N60UNDF FGPF15N60UNDF O-220F fgpf15n60 600v 15a | |
inverterdriven
Abstract: IGBT 600V 5A cost
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FGP10N60UNDF O-220 inverterdriven IGBT 600V 5A cost | |
FGPF10N60UNDFContextual Info: FGPF10N60UNDF 600V, 10A Short Circuit Rated IGBT Applications • Home appliance inverter-driven appplication - Air Conditioner, Washing Machine, Refrigerator, Dish Washer Features • Industrial Inverter - Sewing Machine, CNC • Short circuit rated 10us |
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FGPF10N60UNDF FGPF10N60UNDF O-220F | |
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FGP15N60UN
Abstract: marking I58 FGP15N60
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FGP15N60UNDF FGP15N60UNDF O-220 FGP15N60UN marking I58 FGP15N60 | |
ULTRA FAST diode 400v 5a
Abstract: inverterdriven igbt 100V 5A IGBT Driver 10a 400V ultra fast diode d2pak
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FGB5N60UNDF O-263AB/D2-PAK FGB5N60UNDF ULTRA FAST diode 400v 5a inverterdriven igbt 100V 5A IGBT Driver 10a 400V ultra fast diode d2pak | |
FGH40T100SMD
Abstract: fgh40t100 W10K AC welder IGBT circuit IGBT 1000V .200A igbt 1000v 80a DBVCE
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FGH40T100SMD FGH40T100SMD fgh40t100 W10K AC welder IGBT circuit IGBT 1000V .200A igbt 1000v 80a DBVCE | |
V23990-P303-B-PM
Abstract: TRANSISTOR 1P P303 tyco igbt tyco igbt 6a igbt tyco
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V23990-P303-B-PM D81359 V23990-P303-B-PM TRANSISTOR 1P P303 tyco igbt tyco igbt 6a igbt tyco | |
Contextual Info: FGH40T100SMD 1000V, 40A Field Stop Trench IGBT Features General Description • High current capability Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for hard switching application such as UPS, welder, |
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FGH40T100SMD 25oductor FGH40T100SMD | |
Contextual Info: ISL9R3060G2_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=102ns(Typ. @ IF=30A ) The ISL9R3060G2_F085 is a Stealth dual diode optimized for low loss performance in high frequency hard switched applications.The Stealth™ family exhibits low reverse recovery current |
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ISL9R3060G2 102ns AEC-Q101 | |
Contextual Info: RHRG3060_F085 30A, 600V Hyperfast Rectifier Features Max Ratings 600V, 30A • High Speed Switching ( trr=45ns(Typ.) @ IF=30A ) The RHRG3060_F085 is an Hyperfast diode with soft recovery characteristics (trr < 45ns). It has half the recovery time of ultrafast diode and is of silicon nitride |
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RHRG3060 | |
Contextual Info: ISL9R3060G2_F085 30A, 600V Stealth Rectifier Features 30A, 600V Stealth Rectifier • High Speed Switching trr=31ns(Typ. @ IF=30A ) The ISL9R3060G2_F085 is Stealth diode optimized for low loss performance in high frequency hard switched applications. |
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ISL9R3060G2 | |
22a ic
Abstract: afaa 035H 30ETH06 IRFPE30 smps igbt 200A 600V FET
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IRGP35B60PDPbF O-247AC IRFPE30 22a ic afaa 035H 30ETH06 IRFPE30 smps igbt 200A 600V FET | |
200V 200A mosfet
Abstract: IRGP50B60PD1PBF 200A 600V FET diode marking 33A 30ETH06 MOSFET Parameters 33a marking
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5330A IRGP50B60PD1PbF O-247AC 200V 200A mosfet IRGP50B60PD1PBF 200A 600V FET diode marking 33A 30ETH06 MOSFET Parameters 33a marking |