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Contextual Info: IXKC 13N80C Advanced Technical Information CoolMOS 1 Power MOSFET ISOPLUS™ Package ID25 = 13 A VDSS = 800 V RDS on) max = 290 m N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220™ G G D ﬂ S S isolated	Original	13N80C ISOPLUS220â E72873 20080526b	PDF
13N80C Abstract: 13n80 E72873 Contextual Info: IXKC 13N80C Advanced Technical Information CoolMOS 1 Power MOSFET ISOPLUS™ Package ID25 = 13 A = 800 V VDSS RDS on) max = 290 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220™ G G D q S S isolated	Original	13N80C ISOPLUS220TM E72873 20080526b 13N80C 13n80 E72873	PDF

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Contextual Info: IXKC 13N80C Advanced Technical Information CoolMOS 1 Power MOSFET ISOPLUS™ Package ID25 = 13 A VDSS = 800 V RDS on) max = 290 m N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220™ G G D ﬂ S S isolated

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13N80C ISOPLUS220â E72873 20080526b

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13N80C

Abstract: 13n80 E72873
Contextual Info: IXKC 13N80C Advanced Technical Information CoolMOS 1 Power MOSFET ISOPLUS™ Package ID25 = 13 A = 800 V VDSS RDS on) max = 290 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220™ G G D q S S isolated

Original

13N80C ISOPLUS220TM E72873 20080526b 13N80C 13n80 E72873

PDF