200 MURATA Search Results
200 MURATA Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| BLA2ABD102SN4D | Murata Manufacturing Co Ltd | Ferrite Chip, 4 Function(s), 0.05A, 8 Pin(s) | |||
| BLM03AG100SN1D | Murata Manufacturing Co Ltd | Ferrite Chip, 1 Function(s), 0.5A, 2 Pin(s) | |||
| BLM15HB121SN1D | Murata Manufacturing Co Ltd | Ferrite Chip, 1 Function(s), 0.3A, 2 Pin(s) | |||
| BLM18AG121SN1B | Murata Manufacturing Co Ltd | Ferrite Chip, 1 Function(s), 0.8A, 2 Pin(s) | |||
| BLM18BA121SN1D | Murata Manufacturing Co Ltd | Ferrite Chip, 1 Function(s), 0.2A, 2 Pin(s) |
200 MURATA Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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2030 DATA SHEET
Abstract: SAFEH SAFEH1G95FL0F00 murata SAW
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safeh1g95fl0f001980mhz1950mhz2030 data sheet+2 | |
AT90SCR200
Abstract: AT90SCR200H Programming Bootloader at90scr200 At90scr AT90SCR200LHS ISO7816-12 Programming Bootloader at90scr100 AT90SCR200LSD AT90SCR100 Inside Secure
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tpr0327cat90scr100/116/132/20023jan128/16-bit+10 | |
tantalum 1000uF
Abstract: 120C SP02 SP03 TR-332
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eus20-120eus20-120-6200921520tantalum 1000uf120c+3 | |
safeh897
Abstract: SAFEH murata saw marking saw 897.5mhz GSM900 940 1601 murata SAW
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gsm900safeh897mfn0f00915mhzunitfeh897mfn0f00+6 | |
SAWES835MCM0F00
Abstract: smd diode marking 325 powermeter 800 SAWES SMD c015 murata SAW
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sawes835mcm0f00835mhz1950mhzsmd diode marking 325+4 | |
EUS20-120Contextual Info: Bus Converter EUS20-120 Model Features: OBSOLETE PRODUCT 9 48 Vin, Isolated, 4:1 Fixed Conversion Ratio 9 250 Watt Output at 48 Vin, 55 C, 200 LFM 9 200 Watt Output at 38 Vin, 55 C, 200 LFM 9 Industry Standard 1/8 Brick Footprint 9 Remote Enable Primary Side, Positive or Negative |
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eus20-120eus20-120-6200921520 | |
835MHz
Abstract: smd diode marking 325 marking 03 murata SAW
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sawep835mcm0f00835mhzsmd diode marking 325marking 03+1 | |
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Contextual Info: NMR Series www.murata-ps.com Isolated 1W Single Output DC/DC Converters Efficiency up to 80% mA mA Typ. Max. Typ. Max. % pF kHrs 5 12 15 5 12 15 5 12 15 200 83 67 200 83 67 200 83 67 290 260 253 121 110 110 60 53 52 12.5 6.90 6.50 12.5 6.90 6.50 6.80 2.80 |
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OP6180
Abstract: OP6180-DEV 4G base station power amplifier OP6180-DEVS AN10921 BLF7G20LS-200 ad9122 TRANSISTOR c104 transistor c114 diagram transistor c118
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an10921blf7g20ls-200op6180op6180-dev+6 | |
RO4350 properties
Abstract: RO4350 BLF7G15L-200 800B 15085
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blf7g15ls-200ro4350 propertiesro4350blf7g15l-200+2 | |
BLF7G15L-200
Abstract: RO4350 properties 800B RO4350 BLF7G15LS-200
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blf7g15ls-200blf7g15l-200ro4350 properties800b+1 | |
M02045G-2Y03-T
Abstract: MC2045-2Y M02045-P6EVM SFP EVAL BOARD M02045G BLM31A601SPT QSOP16 SOIC16 M02045-2YDIEWP M02045
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mc2045-2y02045-dsh-001-hm02045g-2y03-tm02045-p6evm+7 | |
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Contextual Info: AN10944 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 Rev. 2 — 28 October 2013 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , W-CDMA, BLF7G20LS-200 |
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an10944blf7g20ls-2001j503s1p503s | |
Rogers 3006
Abstract: transistor c118 BLF7G20LS-200 R105 NJM 78L08UA-ND NJM78L08UA transistor NPN c115 AN1094 C106 C109
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an10944blf7g20ls-200rogers 3006transistor c118+7 | |
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Contextual Info: BLS7G3135LS-200 LDMOS S-band radar power transistor Rev. 2 — 23 September 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for S-band radar applications in the frequency range from 3100 MHz to 3500 MHz. Table 1. |
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bls7g3135ls-200 | |
78253JC
Abstract: 78253/55JVC-R
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78253jmax25378253/35jc78253/55jc+7 | |
NCP700
Abstract: NCP700MN250R2G NCP700MN180R2G NCP700MN275R2G NCP700MN280R2G NCP700MN300R2G
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ncp700ncp700/dncp700mn250r2gncp700mn180r2g+3 | |
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Contextual Info: NCP700 200 mA, Ultra Low Noise, High PSRR, BiCMOS RF LDO Regulator Noise sensitive RF applications such as Power Amplifiers in cell phones and precision instrumentation require very clean power supplies. The NCP700 is 200 mA LDO that provides the engineer with a very |
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ncp700ncp700/d | |
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Contextual Info: NCP700 200 mA, Ultra Low Noise, High PSRR, BiCMOS RF LDO Regulator Noise sensitive RF applications such as Power Amplifiers in cell phones and precision instrumentation require very clean power supplies. The NCP700 is 200 mA LDO that provides the engineer with a very |
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ncp700ncp700/d | |
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Contextual Info: NCP700 200 mA, Ultra Low Noise, High PSRR, BiCMOS RF LDO Regulator Noise sensitive RF applications such as Power Amplifiers in cell phones and precision instrumentation require very clean power supplies. The NCP700 is 200 mA LDO that provides the engineer with a very |
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ncp700ncp700/d | |
tsop20
Abstract: MC2044CB16 MS-012 soic16 MC2044CS16 MC2044CWAFERSPBG MC2044CWPDIE QSOP16 SOIC16 MC2044CQ16 TSOP-20
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mc2044c02044-dsh-001-btsop20mc2044cb16+8 | |
CR703
Abstract: c708 smd ST DIODE C427 c423 diode smd c701 diode c424 smd diode c321 smd diode me c319 smd diode c310 AD9467
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ug-200ad946716-bitmsps/250+13 | |
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Contextual Info: DATA SHEET SKY12407-321LF: 50-600 MHz, 12 dB 100 Ω Differential Digital Attenuator Applications • Cellular/3G infrastructure • IF/RF systems Features • Dual, positive voltage operation: 0/1.8-5.0 V • High bit accuracy: ±0.3 dB @ 200 MHz • Low insertion loss: 0.3 dB @ 200 MHz |
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sky12407-321lf12-pinj-std-020200935f | |
200935F
Abstract: SKY12407-321LF
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sky12407-321lf12-pinj-std-020200935f | |