200 MIL BEO PACKAGE Search Results

Contextual Info: blE J> HEULETT-PACKAR»/ CNPNTS W hoI HEW LETT A"KM PACKARD m MMM7Sfl4 □ DlOO'ia b^l IHPA MSA-0520 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Features 200 mil BeO Package • • Cascadable 50 £2 Gain Block High Output Power:

AVANTEK msa 0420

Abstract: avantek Avantek amplifier 167 avantek microwave MSA-0420 Avantek S MODAMP LD110 200 mil BeO package
Contextual Info: 0AVANTEK MSA-0420 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 200 mil BeO Package Features • • • • • • Cascadable 50 n Gain Block 3 dB Bandwidth: DC to 4.0 GHz 16.0 d Bm typical Pi dB at 1.0 GHz

Contextual Info: d a la sheet 0AVANTEK MSA-0520 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers September, 1989 Features • • • • • Avantek 200 mil BeO Package Cascadable 50 Q. Gain Block High Output Power: +23 dBm typical Pi dB at 1.0 GHz

Contextual Info: O a v a n te k MSA-0420 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 200 mil BeO Package Features • • • • • • Cascadable 50 £1 Gain Block 3 dB Bandwidth: DC to 4.0 GHz 16.0 dBm typical Pi dB at 1.0 GHz

Contextual Info: VI H EW LETT PACKARD MSA-0520 M ODAM P Cascadable Silicon Bipolar M onolithic M icrowave Integrated C ircu it A m plifiers 200 mil BeO Package Features • • Cascadabie 50 i2 Gain Block High Output Power: +23 dBm typical Pi dB at 1.0 GHz • Low Distortion:

avantek msa0520

Abstract: Avantek S AVANTEK MSA-0520 NF50 avantek microwave Avantek UA-152
Contextual Info: dala sheet O A V A N T E K MSA-0520 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers September, 1989 Features • • • • • Avantek 200 mil BeO Package Cascadable 50 Q. Gain Block High Output Power: +23 dBm typical Pi dB at 1.0 GHz

Contextual Info: m H E W LE TT PACKARD MSA-0420 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Features • • • • • • 200 mil BeO Package Cascadable 50 £2 Gain Block 3 dB Bandwidth: DC to 4.0 GHz 16.0 dBm typical Pi dB at 1.0 GHz

Contextual Info: MSA-1120 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers HEW LETT IV I P A C K A R D Features • • • • • • 200 mil BeO Package High Dynamic Range Cascadable 50 a or 75 Q Gain Block 3 dB Bandwidth: 50 MHz to 1.6 GHz

Contextual Info: H EWL ETT -PA CKA RD/ CMPNTS blE J> H E W LE T T PACKARD m • 4447564 0G10150 Ifi? H H P A MSA-1120 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers 200 mil BeO Package Features • • • • • • High Dynamic Range Cascadable

AT-64020

Contextual Info: AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor W U dI HEW LETT mÜKM PACKARD Features • • • • • 200 mil BeO Package High Output Power: 2B.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi dBat 4.0 GHz High Gain at 1 dB Compression:

Contextual Info: AVANTEK INC O a v a n 20E D t • imn tfc. DDDti?3D b ■ MSA-1120 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers e k ~-7 4 - r s - o / t Avantek 200 mil BeO Package Features • High Dynamic Range Cascadable 50 Q, or 75 ft Gain Block

AT-64020

Abstract: AT64020 AT-64023
Contextual Info: Medium Power Transistors Typical Specifications @ 25°C Case Temperature Part Number VCE (V) P1 dB @ 2 GHz G1 dB @ 2 GHz P1 dB @ 4 GHz G1 dB @ 4 GHz (dBm) (dBm) (dBm) (dBm) AT-64020 16.0 +28 10.0 +27 AT-64023 16.0 +28 12.5 +27 4-20 Package Page No. 6.5 200 mil BeO disk

MSA-0420

Abstract: MSA0420
Contextual Info: Agilent MSA-0420 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 4.0 GHz Description • 8.5 dB Typical Gain at 1.0 GHz 200 mil BeO Package • 16.0 dBm Typical P1 dB at 1.0 GHz The MSA-0420 is a high performance silicon bipolar Monolithic

Contextual Info: AVANTEK 20E INC D O avantek • • • • • 7 AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Features • OOO bS Sb Avantek 200 mil BeO Package High Output Power: 28.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi dBat 4.0 GHz High Gain at 1 dB Compression:

MRF328

Abstract: MRF243 mrf245 MRF648 MRF463 Motorola transistors MRF648 MRF460 Barnes RM2A Motorola transistors MRF455 Motorola transistors MRF454
Contextual Info: Order this document by AN790/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN790 THERMAL RATING OF RF POWER TRANSISTORS Prepared by: Robert J. Johnsen Reliability is of primary concern to many users of transistors. The degree of reliability achieved is controlled by the device user because he determines the stress levels applied by his circuit and

AT-64023

Abstract: S21E
Contextual Info: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is ­designed for

AT-64023

Abstract: S21E 156 51 MA2670
Contextual Info: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is ­designed for

AT-64020

Abstract: S21E Silicon Bipolar Transistor 200 mil BeO package npn
Contextual Info: AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics. This device is ­designed for

200 mil BeO package

Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ TRANSISTOR 023 AT-64020 data sheet IC 74 IC vhf/uhf Amplifier ic-110 RF NPN POWER TRANSISTOR 3 GHZ RF POWER TRANSISTOR NPN zo 107
Contextual Info: AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics. This device is designed for use in medium power, wide band amplifier and

200 mil BeO package

Abstract: transistor 2 ghz zo 107 MSA-0520 NF50
Contextual Info: MSA-0520 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-0520 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic, BeO disk package for good thermal characteristics. This MMIC is designed for use

100C

Abstract: MSA-0520 NF50
Contextual Info: MSA-0520 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-0520 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic, BeO disk package for good thermal characteristics. This MMIC is designed for use as a general

bipolar transistor s-parameter

Abstract: bipolar transistor ghz s-parameter 200 mil BeO package RF NPN POWER TRANSISTOR 2.5 GHZ 20-50-200 TRANSISTOR 12 GHZ RF TRANSISTOR 2.5 GHZ s parameter ic-110 RF POWER TRANSISTOR NPN vhf RF NPN POWER TRANSISTOR 3 GHZ
Contextual Info: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed

MSA-1120

Abstract: NF460
Contextual Info: MSA-1120 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-1120 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic BeO disk package for good thermal characteristics. This MMIC is designed for high dynamic

200 mil BeO package

Abstract: msa-1120 MMIC marking code R
Contextual Info: MSA-1120 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-1120 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic BeO disk package for good thermal characteristics. This MMIC is designed for high