20-20 DESIGN SINK Search Results

1N3906

Abstract: EEL25 SB540CT 1N3906 datasheet EE25L 2N3904 top245p 33 uF 400 V LTV817A 1N4005
Contextual Info: Design Idea DI-55 TOPSwitch-GX 20 W 25 W peak DVD Supply Application Device Power Output Input Voltage Output Voltage Topology DVD TOP245P 20 W (25 W pk) 85-265 VAC 3.3 V / 5 V / 12 V / -24 V Flyback Design Highlights The external current limit programming and remote ON/OFF

2K40

Abstract: MIL-R-39009 TAH20
Contextual Info: FEATURES • 20 Watt Power Rating at 25°C Case Temperature • High Pulse Tolerant Design • Quick-snap Molded Package • Very Low Inductance Design • Resistor Package Electrically Isolated from Heat Sink • Low Thermal Resistance to Heat Sink @ RTH<6.25°C/W

Sanyo Semiconductor stk4026

Abstract: STK4026 STK4026II STK4026 II STK4026-II
Contextual Info: Ordering number : EN4549A Thick Film Hybrid IC STK4026 II AF Power Amplifier Split Power Supply (25 W min, THD = 0.4 %) Features • Compact packaging supports slimmer set designs • Series designed for 20 up to 200 W and pincompatibility • Simpler heat sink design facilitates thermal design of

C 4548

Abstract: 4548 4584-3 STK4028
Contextual Info: Ordering number : EN4548A Thick Film Hybrid IC STK4028 II AF Power Amplifier Split Power Supply (30 W min, THD = 0.4 %) Features • Compact packaging supports slimmer set designs • Series designed for 20 up to 200 W and pincompatibility • Simpler heat sink design facilitates thermal design of

hall current transducer 5A

Abstract: schematic inductive proximity sensor ACS712 inductive proximity sensor transistor schematic ACS704 ACS706ELC-20A ACS706ELC20A-DS ACS706T ELC20A
Contextual Info: ACS706ELC-20A Bidirectional 1.5 mΩ Hall Effect Based Linear Current Sensor with Voltage Isolation and 20 A Dynamic Range Not for New Design These parts are in production but have been determined to be NOT FOR NEW DESIGN. This classification indicates that sale of

Solenoid Drivers

Abstract: IBM 286 schematic relay spice model
Contextual Info: Micrel Semiconductor MPD8020 ASIS Design Package Overview 5-20 MiereI MPD8020 MPD8020 ASIS™ Advantages CMOS/DMOS Semicustom Array Switch Mode Power Supplies • Start with your circuit design needs 25 to 100V operation. Sm all size, up to 1MHz switching. Full and half Hbridge configurations.

schematic diagram of energy saving lamps 25 watts

Abstract: Motorola, AN1049 ELECTRONIC BALLAST 150 W HID DIAGRAM Motorola Bipolar Power Transistor Data schematic diagram Electronic Ballast HID Motorola, eb407 Basic Halogen Converter EB407 Basic Halogen Converter FT1603A transistor bc557 eb407
Contextual Info: MOTOROLA Order this document by AN1543/D SEMICONDUCTOR APPLICATION NOTE AN1543 Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade Power Semiconductor Applications Engineer Motorola SPS Toulouse ABSTRACT With a continuous growth rate of 20% per year, electronic

035H

Abstract: IRFPE30
Contextual Info: PD - 95556 IRG4PC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

transistor Electronic ballast "INDUCTION LAMP"

Abstract: schematic diagram Electronic Ballast HID Motorola, AN1049 MC14046 AN1049 EB407 5000 watts PURE SINE WAVE inverter schematic diagram induction lamp electronic ballast for fluorescent lighting t8 motorola BR480/D
Contextual Info: MOTOROLA Order this document by AN1543/D SEMICONDUCTOR APPLICATION NOTE AN1543 Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade Power Semiconductor Applications Engineer Motorola SPS Toulouse ABSTRACT With a continuous growth rate of 20% per year, electronic

OM9038SF

Abstract: OM9039SF 12 VOLT 100 AMP smps diode v3e
Contextual Info: OM9038SF OM9039SF H-BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 20 And 15 Amp IGBT Module With Soft Recovery Rectifier, H-Bridge Configuration FEATURES • • • • • • 12-Pin Hermetic Power Package Isolated Heat Sink Design

IGBT 50 amp 1000 volt

Abstract: CQ-111 100 Amp current 1300 volt diode 12 VOLT 100 AMP smps IGBT 250 amp smps 12 volt OM9038SF OM9039SF 12 VOLT 150 AMP smps 150 VOLT 10 AMP smps
Contextual Info: OM9038SF OM9039SF H-BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 20 And 15 Amp IGBT Module With Soft Recovery Rectifier, H-Bridge Configuration FEATURES • • • • • • 12-Pin Hermetic Power Package Isolated Heat Sink Design

LT1074/LT1076

Abstract: 102k 50v capacitor Step-Down, External PNP Saturated Switch 376hvi LT1376-5 ihsm-4825 22uh 15 13765 LT1376CS8 rc Snubber circuits theory, design and application 375HVI
Contextual Info: LT1375/LT1376 1.5A, 500kHz Step-Down Switching Regulators FEATURES Constant 500kHz Switching Frequency Easily Synchronizable Uses All Surface Mount Components Inductor Size Reduced to 5µH Saturating Switch Design: 0.4Ω Effective Supply Current: 2.5mA Shutdown Current: 20µA

Contextual Info: SN54ALVTH16821, SN74ALVTH16821 2.5-V/3.3-V 20-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS SCES078E - JULY 1996 - REVISED JANUARY 1999 • State-of-the-Art Advanced BiCMOS Technology ABT Widebus Design for sn sn 54ALVTH16821 . . . 74ALVTH16821 . . .

MARKING CMR

Contextual Info: 5V/3.3V TRIPLE ECL/LVECL-TOPECL/LVPECL TRANSLATOR FEATURES • ■ ■ ■ ■ DESCRIPTION 3.3V and 5V power supply options 500ps propagation delay Fully differential design Supports both standard and low voltage operation Available in 20-pin SOIC package

Contextual Info: Standard Products RadHard-by-Design RHD5900 Quad Operational Amplifier www.aeroflex.com/RHDseries April 20, 2012 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Single power supply operation 3.3V to 5.0V or dual power supply operation (±1.65 to ±2.5V) Radiation performance

GE 443

Abstract: AN-994 IRG4RC20F
Contextual Info: PD - 91731A IRG4RC20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRG4PC50FD

Abstract: IRG4PC50
Contextual Info: PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

TL5812x

Abstract: A6810 A6812 A6812EEPTR A6812EEPTR-T A6812KLWTR-T A6812SEPTR A6818
Contextual Info: A6812 DABiC-IV 20-Bit Serial-Input Latched Source Driver Discontinued Product This device is no longer in production. The device should not be purchased for new design applications. Samples are no longer available. Date of status change: November 1, 2010 Recommended Substitutions:

IRG4PC50FD

Contextual Info: PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

AN-994

Abstract: IRG4RC20F
Contextual Info: PD - 91731A IRG4RC20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

GE 443

Abstract: IR igbt gate driver ic AN-994 IRG4RC20F
Contextual Info: PD - 91731 IRG4RC20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRG4PC30F

Contextual Info: PD 91459B IRG4PC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRG4BC30FD

Abstract: fl 014
Contextual Info: PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

IRG4PC40F

Contextual Info: PD 91463B IRG4PC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than