20 AMP MOSFET TRANSISTOR Search Results

12 volt 200 Amp PWM

Abstract: 20a step motor MSK4322
Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S. KENNEDY CORP. 8170 Thompson Road FEATURES: 20 AMP, 200 VOLT MOSFET SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID Cicero, N.Y. 13039 200V, 20 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 1.0°C/W Each MOSFET

12 volt 200 Amp PWM

Abstract: MSK4322 4322H
Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. M.S. KENNEDY CORP. 20 AMP, 200 VOLT MOSFET SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4707 Dey Road Liverpool, N.Y. 13088 4322 315 701-6751 FEATURES: 200V, 20 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.6°C/W (Each MOSFET)

Contextual Info: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. M.S. KENNEDY CORP. 20 AMP, 200 VOLT MOSFET SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4707 Dey Road Liverpool, N.Y. 13088 4322 315 701-6751 FEATURES: 200V, 20 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.6°C/W (Each MOSFET)

MSK4323

Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. M.S. KENNEDY CORP. 20 AMP, 100 VOLT MOSFET SMART HIGH TEMP 3-PHASE MOTOR DRIVE HYBRID 4707 Dey Road Liverpool, N.Y. 13088 4323 315 701-6751 FEATURES: Designed for High Temp Applications 100V, 20 Amp Capability Low Thermal Resistance - Junction to Case - 3.0°C/W (Each MOSFET)

MSK4322

Abstract: 12 volt 200 Amp PWM 4322H 4322 motor
Contextual Info: ISO-9001 CERTIFIED BY DSCC 20 AMP, 200 VOLT MOSFET SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID M.S.KENNEDY CORP. M.S. KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 4322 315 701-6751 MIL-PRF-38534 QUALIFIED FEATURES: 200V, 20 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 1.0°C/W (Each MOSFET)

12 volt 200 Amp PWM

Abstract: 4422 MOSFET MSK4422D MSK4422G MSK4422S MSK4422U Smart High-Side Power Switch 1 Channel 12 volt 6 Amp controller 4422
Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. M.S. KENNEDY CORP. 20 AMP, 200 VOLT MOSFET SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4707 Dey Road Liverpool, N.Y. 13088 4422 315 701-6751 FEATURES: 200V, 20 Amp Capability Self-Contained, Smart Lowside/Highside Drive Circuitry

Contextual Info: MIL-PRF-38534 & 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. M.S. KENNEDY CORP. 20 AMP, 100 VOLT MOSFET SMART HIGH TEMP 3-PHASE MOTOR DRIVE HYBRID 4707 Dey Road Liverpool, N.Y. 13088 4323 315 701-6751 FEATURES: Designed for High Temp Applications 100V, 20 Amp Capability

12 volt 200 Amp PWM

Abstract: 4422 mosfet schematic induction heating 4422 200 Amp bridge mosfet 4422 datasheet hybrid ic pwm MOSFET FOR AMP POWER SUPPLY SWITCHING 4707 N Channel MOSFETs amp mosfet schematic circuit
Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. M.S. KENNEDY CORP. 20 AMP, 200 VOLT MOSFET SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4707 Dey Road Liverpool, N.Y. 13088 4422 315 701-6751 FEATURES: 200V, 20 Amp Capability Self-Contained, Smart Lowside/Highside Drive Circuitry

RA20H8087M

Abstract: RA20H8087M-01 20W power transistor
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M 806-825/ 851-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to

RA20H8087M

Abstract: RA20H8087M-101 20W power transistor
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to

RA20H8994M

Abstract: RA20H8994M-01 transistor mosfet 536 hatfield attenuator
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8994M 896-902/ 935-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to

transistor BC 945

Abstract: RA20H8994M 1000v 200w Transistor RA20H8994M-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8994M RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to

RA20H8994M

Abstract: RA20H8994M-101 mitsubishi rf RF MOSFET MODULE
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8994M RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to

AN569

Abstract: MTDF1C02HD MTDF1C02HDR2 SMD310 "step recovery diode" 1.7 pf
Contextual Info: MTDF1C02HD Preferred Device Power MOSFET 1 Amp, 20 Volts Complementary Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Micro8 devices are designed

RA20H8087M

Abstract: RF MOSFET MODULE RA20H8087M-101 F8068
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to

AN569

Abstract: MTSF1P02HD MTSF1P02HDR2 SMD310
Contextual Info: MTSF1P02HD Preferred Device Advance Information Power MOSFET 1 Amp, 20 Volts P–Channel Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Micro8 devices are designed

AN569

Abstract: MTDF1N02HD MTDF1N02HDR2 SMD310
Contextual Info: MTDF1N02HD Preferred Device Power MOSFET 1 Amp, 20 Volts N–Channel Micro8t, Dual These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Micro8 devices are designed

MTDF1P02HDR2

Abstract: TRANSISTOR BC 187 AN569 MTDF1P02HD SMD310
Contextual Info: MTDF1P02HD Preferred Device Power MOSFET 1 Amp, 20 Volts P–Channel Micro8t, Dual These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Micro8 devices are designed

Contextual Info: MTDF1N02HD Preferred Device Power MOSFET 1 Amp, 20 Volts N−Channel Micro8t, Dual These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. Micro8 devices are designed

RA20H8087M

Abstract: RA20H8087M-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to

RA20H8994M

Abstract: 2 x 20w amplifier
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8994M RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to

300 Amp mosfet

Abstract: mosfet 400 amp MOSFET FOR 100khz SWITCHING APPLICATIONS 50 Amp Mosfet dual jfet vhf jfet 133 jfet transistor mosfet amp DUAL JFET Pch low voltage mosfet switch 3 amp
Contextual Info: FIELD EFFECT TRANSISTORS FET NTE Type No. Polarity and Material Description and Application 132 JFET N-CH 133 JFET N-CH 221 Dual Gate MOSFET N-CH 222 Dual Gate MOSFET N-CH 312 JFET N-CH JFET P-CH 326 451 452 JFET N-CH JFET N-CH 454 Dual Gate MOSFET N-CH

300 Amp mosfet

Abstract: 200 Amp mosfet ECG222 ECG459 ECG451 ECG458 ECG221 ECG457 ECG312 dual jfet vhf
Contextual Info: Field Effect Transistors ECG Type Description and Application Maximum Ratings at T a = 25°C Observe MOS Handling ▲ Gate to Source Trans­ Cutoff conductance Voltage gfs VGS <°«> Typ fjmho8 Max V Zero-Gate Gate To Voltage Source Drain Breakdown Input

MGCF21

Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount