2.T TRANSISTOR Search Results

TLP621

Abstract: MARKING toshiba TLP621-4 e152349 TLP621-4 11-5B2 E67349 TLP621-2
Contextual Info: TOSHIBA TLP621,TLP621-2#TLP621-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR T L P 6 2 1 . T L P 6 2 1 -2 . T L P 6 2 1 -4 PROGRAMMABLE CONTROLLER A C /D C -IN P U T MODULE SOLID STATE RELAY The TOSHIBA TLP621, -2, and -4 consists of a photo-transistor

2sa1692

Abstract: BMA150 2SC3807
Contextual Info: SAf/YO LARGE-POWER T 0 1 2 6 L P TRANSISTORS F e a t u r e s •ft No ☆ C o n v e n t i o n a l t y p e : 1 0 W ( T c = 25"C ) , T 0 - 1 2 6 L P : 2 0 W ( T c - 2 5 “ C ) Facilitates h i g h -density mounting. ☆ Replaceable screw hole makes for T0-220

2SB596

Abstract: Transistor 596 SJ transistor 2SB Transistor 2sb596 251C 2SD526 AC75 2SB596O toshiba 2SB596
Contextual Info: 2/ U D > P N P = t t ß i W + J - » h 5 > ^ ^ 2 S B 596 SILICON PNP TR IPLE DIFFU SED MESA TRANSISTOR O Unit o Power Amplifier PC= 30W 2 S D 6 8 6 ¿ 3 x 7 l - t V * W- T c = 2 5 ’C ) ijrtÜ ÍJ20~ 35W i> 5^< 0 OTL T y 7 K M i â T - f 0 Complementary

Contextual Info: i GaAs IRED a PHOTO-TRANSISTOR T L P 3 2 1 , - 2 , - 4 TENTATIVE DATA PROGRAMMABLE CONTROLLERS DC —OtiTPIJT MODULE TELECOMUNICATION The T O S H I B A TLP321, -2 and -4 consist of a 4 3 1 2 T L P 32 1 4.58±0.2 5 p h o t o - t r a n s i s t o r o p t i c a l l y couled to a g a l l i um

2SA1111

Abstract: 2SA1112
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1111 2SA1112 S ilicon PNP P o w er Transistors D E S C R IP T IO N • W ith T O -2 2 0 package • C o m p lem en t to type 2 S C 2 5 9 1 /2 5 9 2 • G ood linearity of hFE • H igh V ceo A P P L IC A T IO N S

Contextual Info: TOSHIBA 9 0 9 7 2 5 0 T O SH IB A ¿foóhiht TT OISCRETE/0PT03- < D IS C R E T E / O P T O Ï>|F|t 0 T 7 2 5 0 99D 1 6 6 7 7 SEMICONDUCTOR 0Dlbh77 DT-3S-35T TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 4 2 3 SILICON N CHANNEL MOS TYPE 7T-M0S) INDUSTRIAL APPLICATIONS

3SK121

Abstract: 3SK114 SC4251 3SK150 S47B 3SK140 3SK152 3SK159 1SS241 DLP238
Contextual Info: T08H I 2. Discrete Semiconductors for Tuner 2-1 T ra n s is to rs a n d D iod e s fo r T u n e r ANT V R F Amp. r\ _L X £ osc 2-1-1 R F Amp. 2-1-2 M IX Dual Gat« P E T Bi-Transistor UHF VHF y -X S O T -1 4 3 *-X S O T -1 4 3 3SK114 3SK159 3SK152 3SK126 3SK160

TO-22CFN

Contextual Info: T ra n s is to rs T O -2 2 0 • T Q -2 2 0 F P • T O -2 2 0 F N • H R T TD-220FP is a TG-220 w ifi mo« aated fin tar e re« mounting ar>d righer PC. 2W. TO-22CfN is a kw profle by 2mm version c* TO-22CFP wfrcul fin support pin, for higher mounting density. HRT is a taped power transistor package fee uso with an automatic placement machine.

Contextual Info: GaAs IRED S PHOTO-TRANSISTOR TLP521-1.-2,-4 T L P 5 2 1 -1 P R O G R A M M A B L E C O NTRO LLER S A C /D C - IN P U T M O D U L E S O L ID S T A T E R E L A Y T h e T O S H IB A T L P 5 2 1 -1 , - 2 a n d - 4 c o n s is t o f a p h o to -tr a n s is to r

Contextual Info: T fmtt T S D F 1 2 2 0 / T S D F 1 2 2 0 R Semiconductors Silicon NPN High Frequency Transistor Electrostatic sensitive device. ^ Observe precautions for handling. i e & Applications For low-noise applications such as preamplifiers, Mixers and oscillators in analog and digital TV-systems

DTC124EU/A

Abstract: DTC124E DTC124EE DTC124EKA DTC124EUA SC5904 DTC124EU IPL 3000
Contextual Info: DTC124EE/DTC124EU A/DTC124EKA h 7 > V X 3* /Transistors D T C 1 2 4 E E /D T C 1 2 4 E U A /D T C 1 2 4 E K A Digital Transistors Includes Resistors h 7 > y 7 ^ 7 < 7 f / T r a n s i s t o r Switch 1^ffi^tâsH/Dîm ensions (Unit : mm) 1) A '- f T X fflW iS M S F *g j& L T l ' - S £

Contextual Info: 2S B 16 39 Transistors 2 S D 2 3 1 8 / 2 S D 19 44 High-current gain Power Transistor —60V, —3A 2SB1639 I • A b so lu te maximum ratings ( T a = 2 5 t) • F ea tu res 1 ) H ig h D C c u rre n t g a in . (T y p .4 4 0 a t V c e / I c = — 4 V / - •0 .5 A )

2SD1878

Abstract: 2SD187 TV horizontal Deflection Systems transistor 2sd1878 NPN POWER TRANSISTOR 2SD1878
Contextual Info: Ordering number: EN 2 4 2 5 2 S DM 8 7 8 NPN Triple Diffused Planar Type Silicon Transistor Co l o r TV Ho r i z o n t a l D efle c t i o n Ou t p u t Applications Applications . Color TV horizontal deflection output . Color display horizontal deflection output

hso16

Abstract: TE55 2sk790
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9 0 9 7 2 5 0 T O S H IB A T O S H IB A TT D I S C R E T E /OPTO J d F § T D T 7 2 5 G ODlbTSS T0SHIBA FIELD e f f e c t TRANSISTOR SEMICONDUCTOR 99D 2 S IC 7 9 0 16755 SILICON N C H A N N E L MOS TYPE C7T-MOSI T-3'?-13 TECHNICAL DATA

DTC124EX

Abstract: DTA143EX dt5c114e DT5A114E DT5A143E DT5C124E DT5C143E
Contextual Info: 40E » ROHM CO LTD I / T 78 2 6 = ^ 0 0 0 b 2 c14 S ransistors D T 5 Ä x DT5A/DT5C 7 =yi- 2 r y h 7 > y X $ X < 7 ^ - / T r a n s i s t o r Switch Digital Transistor Arrays (Includes Resistors) D T 5 C • J ill/D im e n s io n s (Unit : mm) • «Ä I J / W r x f f lr o if t ia S r t iïL - T l'S f c « ) ,

TIP2955T

Abstract: A4S2 TIP3055T T-23-Z
Contextual Info: DEVELOPMENT DATA T h is data sheet c o n ta in s advance in fo rm a t io n a nd TIP2955T sp e cific atio n s are su b ject t o cha nge w it h o u t notice. PHILIPS INTERNATIONAL SbE D • 711005b 0043bG4 2 2 5 H P H I N T -2 3 -Z 1 SILICON EPITAXIAL-BASE POWER TRANSISTOR

2SA1635

Abstract: 2SC4008 SC-75A
Contextual Info: 2SA1635 2SC4008 Transistors Power Transistor —80V, —4A I 2SA1635 •F e a tu re s #A bsolute maximum ratings ( T a = 2 5 t ) 1 ) Low VcE(sai). (Typ. — 0 . 3 V at Ic / I b = — 2 /—0.2A) 2 ) Excellent DC current gain characteristics. 3 ) Pc = 3 0 W ( T c = 2 5 ‘C )

TRANSISTOR si 6822

Abstract: SI 6822 PA2981C uPA2981 transistor 6822 si TRANSISTOR 6822 si 6822 transistor 6822 TRANSISTOR UPA2982 TRANSISTOR NPN 6822
Contextual Info: M 'ê ' h =7 C o m p o u n d Transistor MP x t° ^ M > ' □ > h ^ ^ LED, A 2 9 8 1 , 2 9 8 2 ^ V 7 °, ^ T U"f «H— -T ¿¿PA2981, 2982ÌÌ, P N P , N PN F 7 y VsX i 7 t H B Î f f i i ' 1 4* Z>, Hiïl V - X f t i 8 ¡ M f à M f à r - >) > h > h 9 > P X ÿ T ^ 4 T to

2SD1378

Contextual Info: 2SD1378 h i 7 > v 7 .$ / T ransistors 2SD1378 y 'J 3 > h 7 > y 7 ^ U k M y & W t ^ Ifffl/L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • • fl.JfjT|-;±|l/Dimensions Unit: mm) 1) V c e o =80V, T —x 2) V c eo = Pc = 1 0 W 2 T 7 " T T K 7 "f A t* 5 g „

Contextual Info: 3Q E D 7 T 5 T 2 3 7 0 0 3 1 1 4 5 7 S C S -T H O M S O N *>7# [*^ 6&I(OT(q * S 1 • ~ T ' 2 T ? - / S 2N2904A-2N2905A 2N2906A-2N2907A T I T S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTIO N The 2N2904A, 2N29Q5A, 2N2906A and 2N2907A are silicon planar epitaxial PNP transistors in Jedec

UDQ5703A

Abstract: 9123A
Contextual Info: QUAD 2-IN PU T PERIPH ERAL/POW ER D RIVERS -T R A N S IE N T -P R O T E C T E D OUTPUTS These 16-lead quad 2-input peripheral/power drivers are bipolar monolithic integrated circuits containing AND or OR logic gates, highcurrent switching transistors, and transient-suppression diodes on the

marking CJD

Contextual Info: 2SC2712 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 2 7 12 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • + 0.5 2 .5 - t t 3 High Voltage and High Current : V0 EO = 5OV, 1(3 = 150mA (Max.) Excellent hpg Linearity

Contextual Info: ROHm 1/2 Speci t icat ion Products Type U l t r a Mi ni m o Id T r a n s i s t o r 2SA1579 2 SA 15 7 9 1. Type 2. Description Epitaxial planar PNP silicon transistor 3. Application H igh Vo 11 age Amp I 4. Abolute maximum ratings. [ Ta = 25°C ] — 120V Collector to base voltage

KJE transistor

Abstract: TRANSISTOR a4w a4w transistor transistor kje 2SD526-O Transistor 2SD 2SD52 2sd 526 2SD526 2SD526-0
Contextual Info: 526 2SD SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR Uni t. in O Bffi J . Û3 MAX . o ^3-6±tX2 Power Amplifier Applications hpE • a u ^ è Wo Pc = 3 0 W Tc = 25TC g S B ö D e i n y T 1!) > v ^ y - t t t í ; Ü 2 0 ~ 2 5 W ; ? 7 * 0 H i - Fi 0 T L 7 >