2.F 1 MARKING Search Results

Contextual Info: 8 7 4 5 6 1 2 3 REVISIONS REV. ECO. NO DESCRIPTION DATE BY A 1025 INITIAL RELEASE 5/15/2006 HT F F CONTACT MARKINGS B 1 2 3 . 58 59 60 B A 1 2 3 . 58 59 60 A E D B A 2X .125 3.18 E E .115 2.92 .100 2.54 CARD SLOT .100 2.54 CONTACT ID SCALE 4:1 D

Contextual Info: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)

Contextual Info: MT3S150P TOSHIBA Transistor GaAs NPN Epitaxial Mesa Type MT3S150P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm FEATURES • Low Noise Figure: NF=0.95dB @f=1 GHz • High Gain: |S21e|2=11.5dB (@f=1 GHz) Marking Ｍ Ｐ Absolute Maximum Ratings (Ta = 25°C)

MT3S111TU

Contextual Info: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 3 R5 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain: |S21e|2=12.5 dB typ. (@ f=1 GHz) 0.166±0.05

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R 2 3 Q 3 Q Q 3 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. U n it in mm + 0 .5 8 .5 - 0 . 3 • Low Noise Figure. . NF = 2.5dB, |S2le|2 = 14.5dB f=500M Hz . NF = 3.0dB, |S2le|2= 9.0dB (f=lG H z) L 5 - 0 .1 5

LT 7706

Abstract: LT 7207
Contextual Info: TOSHIBA 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm + 0.2 2.9-0.3 • Low Noise Figure, High Gain. • N F = 1.8dB, |S 2 1 e|2= 10dB f=2GHz -H M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA R N 2 1 0 7 F -R N 2 1 0 9 F TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2107F, RN2108F, RN2109F SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design

transistor marking 1p Z

Contextual Info: TOSHIBA 2SC5098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5098 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. • U nit in mm 2.1 ± 0.1 Low Noise Figure, High Gain. • . 1.25 ±0.1 N F = 1.8dB, |S 2 1 e|2 = 10dB f=2G Hz n 4 M A X IM U M RATINGS (Ta = 25°C)

ASTM-D882

Abstract: pANDUIT f1.5X4LG6 C75L F1.5X4LG6
Contextual Info: PANDUCT Type C Wiring Duct Cover with Protective Film ® SPECIFICATION SHEET specifications PANDUCT ® Type C Wiring Duct Cover with Protective Film 0.50" cover: C.5*6-F 0.75" cover: C.75*6-F 1" cover: C1*6-F 1.5" cover: C1.5*6-F 2" cover: C2*6-F 3" cover:

Contextual Info: h- .5 0 -H .2 5 0 r 1 .075 — .19 7 .0 5 5 I F □ □ □ .031 — r Î •lo .38 I HIGH DYNAMIC RANGE DOUBLE BALANCED MIXER h-— -19 MAX —- - T .3 5 1 TRAK MICROWAVE RF MIXER $ M X R /3 C F -0 2 H D SPECIFICATIONS: IF OPERATING FREQUENCY

CBL-13472-D-100FT

Abstract: AWM 2468 VW-1 CABLE awm style 2468 vw-1 22 awg awm 2468 26AWG VW-1
Contextual Info: 1 2 3 4 5 6 7 8 9 A A B B C C 100% Electrical Test Free of open/short, Miswiring and Intermittent Failures D D E F E Item 1 2 3 4 RoHS compliant Rev. Description Date Approved G Drawing Name Approved Howard Checked Lizzy Drawn Tina 0.0 ± 0.35 1 2 3 4 Date

Contextual Info: u 1J POWER SPLITTER .19 MAX 7 1 TRAK MICROWAVE POWER SPLITTER .3 5 S P L /2 E F - 0 1 / 7 5 SPECIFICATIONS: FREQUENCY LOSS VSWR AMP BALANCE PHASE BALANCE ISOLATION POWER IMPEDANCE 5 0 0 - 2 0 0 0 MHz 0 .8 dB TYP, 2 .0 dB MAX 1.5:1 MAX ± 0 .1 dB TYP, ± 0 .3 dB MAX

Contextual Info: h- .5 0 - - .2 5 0 |.0 7 5 — .19 r t 1 t 1 RF□ 0 5 5 -1 r .031 — c ri T -lo .38 T - .35 1 I IF MATERIAL El STANDARD □ SPECIAL ° BASE o COVER ° MARKING » FINISH F R -4 VECTRA LASER SOLDER TIN HIGH DYNAMIC RANGE DOUBLE BALANCED MIXER MAX

Contextual Info: TOSHIBA 2SC4322 Transistor U n it in m m i-0 5 2 5 -0 3 -0.25 1.5 - 0 . 1 5 , Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications - o o o Egi F e a tu re s • Low Noise Figure, High Gain + • NF = 1 ,8dB, IS21ei2 = 7.5dB f = 2GHz

marking mh

Abstract: 2SC3606
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SC3606 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 NF = 1.1dB, |S21e|2 = 11dB f = 1 GHz 1 0.55 Low noise figure, high gain. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1

Contextual Info: [ r e f e r e n c e p a ia KV1 8 5 1E S P E C I F I C A T I ON TABLE OF CONTENTS 1. PURPOSE 2 . TOKO PART NUMBER 3 . APPLICATIONS 4 . STRUCTURE 5 . PACKAGE OUTLINE 6 . PIN LAYOUT SIG N A T U R E D A TE 7 . PACKAGE OUTLINE D IM EN SIO N S/ Drawn By MARKING

Contextual Info: KV 1 8 4 5 E S P E C I F I C A T I ON TABLE OF CONTENTS 1. PURPOSE 2 . TOKO PART NUMBER 3. APPLICATIONS 4 . STRUCTURE 5 . PACKAGE OUTLINE 6. PIN LAYOUT SIG N ATU RE DATE 7 . PACKAGE OUTLINE DIM ENSIONS/ Drawn By MARKING 8. ABSOLUTE MAXIMUM RATINGS 9. ELECTRICAL CHARACTERISTICS

4842

Abstract: 2SC4842
Contextual Info: TOSHIBA 2SC4842 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 SC4842 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm 2.1 ±0.1 • Low Noise Figure, High Gain. . NF = l.ld B , |S2iel2= 14dB f = 1GHz 1. 2 5 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)

LG 5547

Contextual Info: TOSHIBA 2SC5088 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5088 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • U nit in mm 2.1 ± 0.1 Low N oise Figure, High Gain. . 1.25 ±0.1 N F = l.ld B , |S2 1 e|2 = 13dB f= lG H z n 4 MAXIMUM RATINGS (Ta = 25°C)

la3350b

Contextual Info: T H I R DA N G L EP R O J E C T I O N ALTERATION I S S U E RATED CAP DIMENSIONS VOLTAGE F H L T F G ECQE1A103()B 125VAC O 7 .9 4 .0 1 .2 7 .1 5 .0 1 .0 1 / 1 / 1 / 1 / H 1 / 1 / lA1230B o . 012 1 / 1 / 1 / 1 / 1 / 1 / 1 / lA1530B o .0 15 1 / 1 / 1 / 1

4614 fet

Abstract: UM 9515 ne3210s01 NE4210S01 NE4210S01-T1 NE4210S01-T1B fet 4304
Contextual Info: SUPER LOW NOISE HJ FET NE4210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.50 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • HIGH ASSOCIATED GAIN: 13.0 dB TYP at f = 12 GHz 2.0 – 0.2 • GATE LENGTH: LG ≤ 0.20 µm 2. 1 – • GATE WIDTH: WG = 160 µm

2SC2715

Contextual Info: 2SC2715 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 HIGH FREQUENCY AMPLIFIER APPLICATIONS. + 0.5 2 .5 - I1 3 + 0 .2 5 1 .5 - Q .l 5 FEATURES : • High Power Gain : Gpe = 2dB (Typ.) (f = 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage.

detector alcohol

Abstract: GP1L52V GP1L51 GP1L50 GP1L54 GP1L52 circuit diagram for photointerrupter
Contextual Info: GP1L50/GP1L51/GP1L52V/GP1L54 GP1L50/GP1L51 GP1L52V/GP1L54 High Sensitivity Photointerrupter • Features ■ Applications 1. High sensing accuracy Slit width:0.5mm 2. High current transfer ratio ( CTR: MIN. 50% at I F = 1mA ) 3. Both-sides mounting type: GP1L50 ( Case height: 10mm )

lic policy

Contextual Info: REFERENCE DATA K V 1 3 5 1 A - 1 S P E C I F I C A T I ON TABLE OF CONTENTS 1. PURPOSE 2. T O K O PART NUMBER 3. APPLIC ATIO NS 4. STR U CTU RE 5. PA CK A GE OUTLINE 6. PIN LAYOUT 7. PA CK A GE OU TLINE D I M E N S I O N S / SIG N A T U R E MARKING 8. A B S O L U T E MAXIMUM RATINGS