2.F 1 MARKING Search Results

sot23 marking df

Abstract: BCW68
Contextual Info: SEMICONDUCTOR BCW68 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 DF 1 2 Item Marking Description Device Mark D BCW68 hFE Grade F F, G * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KTX302U

Contextual Info: SEMICONDUCTOR KTX302U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking 2. Marking 3 No. 0 1 CF 1 2 Item Marking Description Device Mark C KTX302U hFE Grade F Y F , GR(H) * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ●

KTK597E

Abstract: MARK F Marking f1
Contextual Info: SEMICONDUCTOR KTK597E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking F1 1 No. 2007. 1. 9 2 Item Marking Description Device Mark F KTK597E IDSS Rank 1 Y 1 , GR(2) Revision No : 0 1/1

KTC9016S

Contextual Info: SEMICONDUCTOR KTC9016S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 BFF 2 1 Item Marking Description Device Mark BF KTC9016S hFE Grade F F, G, H, I * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

transistor mark BA

Abstract: KTC9011S ktc90
Contextual Info: SEMICONDUCTOR KTC9011S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 BAF 2 1 Item Marking Description Device Mark BA KTC9011S hFE Grade F F, G, H, I * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KTC9018S

Abstract: MARKING SOT23 .BG bg marking
Contextual Info: SEMICONDUCTOR KTC9018S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 BGF 2 1 Item Marking Description Device Mark BG KTC9018S hFE Grade F F, G, H, I * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: MBR F,B 16H35 thru MBR(F,B)16H60 www.vishay.com Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC FEATURES ITO-220AC 2 2 1 1 MBR16Hxx MBRF16Hxx PIN 1 PIN 1 CASE PIN 2 PIN 2 TO-263AB

ERA85-009

Contextual Info: ' t y y ÿ ' f # —K : O utline Drawings SCH O TTK Y BARRIER DIODE • 4 # f i ’ Features • l&Vc Lo w V f ■ : Super high speed sw itchin g. »aft oi 1 J» 1 9 1 > ■K High reliability by planer design. • Marking ? 3 W :ft5m m b'7f S KM A «TBI 1 0 f l- 0 . l l f l - N . 1 2 Æ -D

Contextual Info: 8 7 4 5 6 1 2 3 REVISIONS REV. ECO. NO DESCRIPTION DATE BY A 1025 INITIAL RELEASE 5/15/2006 HT F F CONTACT MARKINGS B 1 2 3 . 58 59 60 B A 1 2 3 . 58 59 60 A E D B A 2X .125 3.18 E E .115 2.92 .100 2.54 CARD SLOT .100 2.54 CONTACT ID SCALE 4:1 D

kf80n08

Abstract: 80N08 TO-220IS kf80n08f fet. kf 80n08 TO220IS DSA0010422
Contextual Info: SEMICONDUCTOR KF80N08F MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking No. Item 1 KF80N08 2 F 801 3 Marking Description KF KEC Fresh FET 80N08 80N08 Package & Version F TO-220IS Lot No. 801 Device Name 2008. 6. 16 Revision No : 0

Contextual Info: February 2008 HYB15T 1G 400C 2 F HYB15T 1G 800C 2 F HYB15T 1G 160C 2 F 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Advance Internet Data Sheet Rev. 0.51 Advance Internet Data Sheet HYB15T1G[40/80/16]0C2F 1-Gbit Double-Data-Rate-Two SDRAM

Contextual Info: MTD2005 • f ö M / Features • S fS f a • • IHKStSS • Constant-Current Chopping Function (Fixed Frequency) 2 Ì I A * ( 1 - 2 f f lM 8 [ ± E N A £ # f f l) • 2-Phase Input (H alf Step Drive Uses ENA Together) ■ i t S S ' E — K tjJ J iH f # !

MBR15H35CT

Abstract: JESD22-B102 J-STD-002 15h60
Contextual Info: New Product MBR F,B 15H35CT thru MBR(F,B)15H60CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB ITO-220AB 2 3 1 1 MBR15HxxCT PIN 1 PIN 2 PIN 3 CASE 2 3 MBRF15HxxCT

MBR15H35CT

Contextual Info: New Product MBR F,B 15H35CT thru MBR(F,B)15H60CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB ITO-220AB 2 3 1 1 MBR15HxxCT PIN 1 PIN 2 PIN 3 CASE 2 3 MBRF15HxxCT

Contextual Info: MT3S20TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 High Gain: |S21e| = 12dB typ. (@ f=1GHz) 2.0±0.1 2 3 MU 1 3 2 0.7±0.05 Marking 1 0.166±0.05 Low Noise Figure: NF = 1.45dB (typ.) (@ f=1GHz)

Contextual Info: Bestückungsplan 25 contact layout 15 11 1 h g f e d c b a = bestückt 25 - assemble 15 11 1 2 h 14 g f 7x2= e d c b a EE-Zone für 2 durchkontaktierte ±0.05 Löcher ø 0.6 2 10 x 2 = 20 8 10 x 2 = Compliant zone for 20 thru hole ø 0.6 ±0.05 3 -0.4 5 7x1.5=

DIN34

Contextual Info: Bestückungsplan 25 contact layout 15 11 1 h g f e d c b a = bestückt - assemble 25 15 11 1 2 h 14 g f 7x2= e d c b a EE-Zone für 2 durchkontaktierte ±0.05 Löcher ø 0.6 2 10 x 2 = 20 8 10 x 2 = Compliant zone for 20 thru hole ø 0.6 ±0.05 3 -0.4 50 max.

KTK597

Abstract: MARK F FB KTK597
Contextual Info: SEMICONDUCTOR KTK597 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 FB 1 2 Item Marking Description Device Mark F KTK597 hFE Grade B A, B, C, D, Y 1 , GR(2) * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]

2w105

Contextual Info: T H I R D ANGLE PR O J E C T I O N A L T E R A T I ON ISSU E D I M E N S I O N S C A P A C I T A N C E I TEM CODE U F E C W F E 2W1 0 5 0 // 2W2 2 5 0 * L T A 1. ( 10 5) 1 7 . 5 A 2. 2 ( 2 2 5) " H F 7. 1 2. 5 1 5. 1 0. 1 5. 5 II VOLUME d 0. P 8 0±0.

Contextual Info: MBR F,B 15H35CT thru MBR(F,B)15H60CT www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES TO-220AB ITO-220AB 2 3 1 1 MBR15HxxCT PIN 1 PIN 2 PIN 3 CASE

Contextual Info: MBR F,B 15H35CT thru MBR(F,B)15H60CT www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES TO-220AB ITO-220AB 2 3 1 1 MBR15HxxCT PIN 1 PIN 2 PIN 3 CASE

Contextual Info: 8 SCH EM A T IC SPECIFICATIONS FUNCTION: 2 P 1 T O F F -O N ILLUMINATED fer RATINGS: 12A 1 /4 H P 125VAC T10CTC 12A 1 /2 H P 250VA C T 1 0 C C 1 6 4 250VAC T125‘ C 1E4 1 0(2) 250VAC T 1 2 5 'C 5 E4 o ILLUMINATION VOLTAGE: 125V CONTACT RESISTANCE: Max. 5 m n a t 50VAC

Contextual Info: MT3S19 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure:NF=1.5 dB typ. (@ f=1 GHz) • High Gain:|S21e| =12.5 dB (typ.) (@ f=1 GHz) 2 Marking 3 T 1.

Contextual Info: Formosa MS SMD Zener Diode BZT52S-F Series List List. 1 Package outline. 2 Features. 2