2.F 1 MARKING Search Results

Contextual Info: 8 7 4 5 6 1 2 3 REVISIONS REV. ECO. NO DESCRIPTION DATE BY A 1025 INITIAL RELEASE 5/15/2006 HT F F CONTACT MARKINGS B 1 2 3 . 58 59 60 B A 1 2 3 . 58 59 60 A E D B A 2X .125 3.18 E E .115 2.92 .100 2.54 CARD SLOT .100 2.54 CONTACT ID SCALE 4:1 D

Contextual Info: February 2008 HYB15T 1G 400C 2 F HYB15T 1G 800C 2 F HYB15T 1G 160C 2 F 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Advance Internet Data Sheet Rev. 0.51 Advance Internet Data Sheet HYB15T1G[40/80/16]0C2F 1-Gbit Double-Data-Rate-Two SDRAM

Contextual Info: MTD2005 • f ö M / Features • S fS f a • • IHKStSS • Constant-Current Chopping Function (Fixed Frequency) 2 Ì I A * ( 1 - 2 f f lM 8 [ ± E N A £ # f f l) • 2-Phase Input (H alf Step Drive Uses ENA Together) ■ i t S S ' E — K tjJ J iH f # !

MBR15H35CT

Abstract: JESD22-B102 J-STD-002 15h60
Contextual Info: New Product MBR F,B 15H35CT thru MBR(F,B)15H60CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB ITO-220AB 2 3 1 1 MBR15HxxCT PIN 1 PIN 2 PIN 3 CASE 2 3 MBRF15HxxCT

MBR15H35CT

Contextual Info: New Product MBR F,B 15H35CT thru MBR(F,B)15H60CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB ITO-220AB 2 3 1 1 MBR15HxxCT PIN 1 PIN 2 PIN 3 CASE 2 3 MBRF15HxxCT

Contextual Info: Formosa MS SMD Zener Diode BZT52S-F Series List List. 1 Package outline. 2 Features. 2

MTD2006

Abstract: LC08A marking
Contextual Info: MTD2006 • f ö M / Features • S fS f a • • IHKStSS • Constant-Current Chopping Function (Fixed Frequency) 2 Ì I A * ( 1 - 2 f f lM 8 [ ± E N A £ # f f l) • 2-Phase Input (H alf Step Drive Uses ENA Together) ■ i t S S ' E — K tjJ J iH f# ! ( y ’ - i •? P X ^ - y T ’lEKSifcrO

Contextual Info: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)

PEF4364T

Abstract: PEF4364 pef 4264 PEF 3265 PEB 4364t V1.2 asp 1103 pef 4264t v2.1
Contextual Info: O c t o b e r 2 00 6 S LIC -S / TS LIC -S S ub s c ri be r L in e I n t e rf a c e C i rc u it S t an da rd F ea t ur e S et S LI C - S P E F 42 64 , V er s io n 2 . 1 S LI C - S 2 (P E F 4 26 4- 2) , V e rs i on 2. 1 T S L I C - S ( P E F 4 36 4) , V er s i o n 2 . 1

mt3s111

Contextual Info: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking

Contextual Info: TOSHIBA 2SC5064 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5064 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.5 2.5-0.3 • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 1 el2= 12dB f=lG H z + 0.25 .1 .5 -0 .1 5 .

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC4317 VHF-UHF BAND LOW NOISE A M PLI FIE R APPLICATIONS. U n i t i n mm +0.5 2 .5 -0 .3 . L o w N o i s e F i g u r e , H i g h Gai n . . N F = 1 . ldB, I S 2 1 e |2= 1 3 d B f=lGHz MAX IMU M RATINGS (Ta=25°C) CHARACTERISTIC

nichicon LOT date code

Abstract: NICHICON DATE CODE MARKING NICHICON capacitor DATE CODE MARKING nichicon date code Nichicon WEEK CODE nichicon date code and marking Nichicon MARKING DATE nichicon pr capacitor NICHICON capacitor DATE CODE NICHICON DATE MARKING
Contextual Info: nichmcon Spec. No. N E —5 1 3 5 S PEC I F I CAT I ON OF ALUMINUM ELECTROLYTIC IIO sheet 1 of 2 3 s e r CAPACITORS i o s APPROVED / DWG. No. H 9 0 3 3 1 F 1 REV. LET. LET. CHECKED DESIGNED REVISIONS DATE c , 7 Z v Æ æ w . î î î I X o r t f * /#? ^ ^ ^ 4 ^ . 2 / . / ? ^

Contextual Info: MT3S150P TOSHIBA Transistor GaAs NPN Epitaxial Mesa Type MT3S150P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm FEATURES • Low Noise Figure: NF=0.95dB @f=1 GHz • High Gain: |S21e|2=11.5dB (@f=1 GHz) Marking Ｍ Ｐ Absolute Maximum Ratings (Ta = 25°C)

2SC3609

Abstract: ic power 22E 12E MARKING power 22E power 22E IC power Ic 22e
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3609 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. + Q .2 2.9- a 3 FEATURES: • Low Noise Figure, High Gain. • N F=1.ldB, IS2 1 e |2=13dB f=lGHz +a25 MAXIMUM RATINGS 1 .5 0 — 0 .1 5 (Ta=25°C) h o CHARACTERISTIC

Contextual Info: 6 2 C C V 8 C1+ 4 2 7 + - 1 1 1 9 V 3 V 2 C11 C2+ 2 C2- 4 5 6 7 8 1 4 3 1 1 2 2 1 9 8 1 1 7 6 1 3 2 N 5 D S 3 4 2 3 T F G 2 GREEN 1 SHUTDOWN 2 2 RS232 Transceiver IC 1 Power +3V to +5.5V, 3D, 5R 250kbps INVALID Low 5 FT3243S 2 Future Technology Devices International Ltd.

MT3S111TU

Contextual Info: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 3 R5 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain: |S21e|2=12.5 dB typ. (@ f=1 GHz) 0.166±0.05

Contextual Info: AHU u m川 i T - C E J R υ n P UNH nLU AA E L HHい ハHV R T ALTERATION 1 S S U E I l i CAPACITANCE ITEM CODE ￨ F * i ECWH 123620 VC 1 0， 0036 (362) i If 123920 VC 1 0， 0039 (392) I f 124320 VC 0 0043 (432) H 1 2 4 7 2 0 VC I 0.0047 (472) 7 1 2 5 1 2 0 V C 1 0.0051 (512)

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R 2 3 Q 3 Q Q 3 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. U n it in mm + 0 .5 8 .5 - 0 . 3 • Low Noise Figure. . NF = 2.5dB, |S2le|2 = 14.5dB f=500M Hz . NF = 3.0dB, |S2le|2= 9.0dB (f=lG H z) L 5 - 0 .1 5

Contextual Info: Bestückungsplan - contact layout 11 1 h g f e d c b a = bestückt - assemble 11 1 2 h 14 g f 7x2= e d c b a EE - Zone fuer durchkontaktierte 2 10 x 2 = ±0.05 Loecher ø 0.6 Compliant zone for 20 thru hole ø 0.6 ±0.05 3 -0.4 25 max. Abschirmblech 103850 shielding

RH1034-1.2

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low noise • N F = 1.3 dB ty p . @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • N F = 1 .3 dB ty p

LT 7706

Abstract: LT 7207
Contextual Info: TOSHIBA 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm + 0.2 2.9-0.3 • Low Noise Figure, High Gain. • N F = 1.8dB, |S 2 1 e|2= 10dB f=2GHz -H M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA R N 2 1 0 7 F -R N 2 1 0 9 F TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2107F, RN2108F, RN2109F SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design

30h100c

Abstract: 30H10 30h1 30H100
Contextual Info: New Product MBR F,B 30H90CT & MBR(F,B)30H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB ITO-220AB 2 MBR30H90CT MBR30H100CT PIN 1 PIN 2 PIN 3