2.7 V Search Results
2.7 V Datasheets (14)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
27V SOD
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AK Semiconductor | Silicon Planar Zener Diodes in SOD-123 package, MMSZ4678W through MMSZ4717W, with power dissipation up to 500mW, zener voltage range 1.8V to 75V, ±5% tolerance, and operating temperature -55°C to +150°C. | Original | ||||
MMBZ27VC
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Leiditech | MMBZ27VC is a SOT-23 packaged TVS diode array with 22V operating voltage, 25.65V breakdown voltage, 38V clamping voltage at 1A, 30pF junction capacitance, and ultra-low leakage current of 0.5uA, designed for ESD protection in high-speed data lines and compliant with IEC 61000-4-2 and IEC 61000-4-4 standards. | Original | ||||
GD32F427VKH6
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GigaDevice Semiconductor (Beijing) Inc | 32-bit MCU, Cortex-M4, 200 MHz, FPU, 3072 KB Flash, 256 KB SRAM, 2.6-3.6V, -40 to +85°C, 3x12-bit ADC, 2x12-bit DAC, timers, comm interfaces, power-saving. | Original | ||||
MMBZ27VAL
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Microdiode Semiconductor | SOT-23, UL 94V-0, 3V-22V reverse, 5.6V-27V Zener, 260°C/10s, 24W @ 1.0ms, ESD Class 3B/16kV, Class C/400V, IEC61000-4-2, <5.0uA, 3,000pcs/reel. | Original | ||||
GD32F427VET6
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GigaDevice Semiconductor (Beijing) Inc | 32-bit MCU, Cortex-M4, 200 MHz, 3072 KB Flash, 256 KB SRAM, FPU, MPU, 2.6-3.6V, -40 to +85°C, power saving modes, enhanced I/Os, ADCs, DACs, timers, comm interfaces. | Original | ||||
GD32F427VEH6
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GigaDevice Semiconductor (Beijing) Inc | 32-bit MCU, Cortex-M4, 200 MHz, 3072 KB Flash, 256 KB SRAM, 2.6-3.6V, -40 to +85°C, FPU, DSP, MPU, 3x12-bit ADCs, 2x12-bit DACs, timers, comm interfaces, USB, ENET, DCI, EXMC. | Original | ||||
2.7V SOD
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AK Semiconductor | Silicon Planar Zener Diodes in SOD-123 package with 500mW power dissipation, 1.8V to 75V zener voltage range, ±5% tolerance, lead-free, surface mountable, operating temperature -55°C to +150°C. | Original | ||||
GD32F427VKT6
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GigaDevice Semiconductor (Beijing) Inc | 32-bit, Cortex-M4, 200 MHz, 3072 KB Flash, 256 KB SRAM, 2.6-3.6V, -40 to +85 °C, FPU, MPU, DSP, 3x 12-bit ADC, 2x 12-bit DAC, timers, comms, power-saving. | Original | ||||
GD32F427VGH6
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GigaDevice Semiconductor (Beijing) Inc | 32-bit MCU, Cortex-M4, 200 MHz, 3072 KB Flash, 256 KB SRAM, FPU, MPU, DSP, 2.6-3.6V, -40 to +85°C, 3x12-bit ADCs, 2x12-bit DACs, timers, SPIs, I2Cs, USARTs, UARTs, I2Ss, CANs, SDIO, USB, ENET, DCI, EXMC, power-saving modes. | Original | ||||
GD32F527VST7
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GigaDevice Semiconductor (Beijing) Inc | 32-bit microcontroller, Arm Cortex-M33 core, 200 MHz, 7680 KB Flash, 512KB SRAM, 512KB ADDSRAM, 64KB TCMSRAM, ECC, 1.71V to 3.6V, -40 to +105°C. | Original | ||||
GD32F527VMT7
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GigaDevice Semiconductor (Beijing) Inc | 32-bit MCU, Arm Cortex-M33, 200 MHz, 7680 KB Flash, 512KB SRAM, ECC, 3x12-bit ADCs, 8x16-bit timers, USB, CAN-FD, -40 to +105°C, 1.71-3.6V. | Original | ||||
GD32F427VGT6
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GigaDevice Semiconductor (Beijing) Inc | 32-bit, Cortex-M4, 200 MHz, 3072 KB Flash, 256 KB SRAM, FPU, MPU, 2.6-3.6V, -40 to +85 °C, power-saving modes, extensive peripherals. | Original | ||||
MMBZ27VAL
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Jiangsu JieJie Microelectronics Co Ltd | Dual TVS diode in SOT-23 package, common anode configuration, 225mW power dissipation, low leakage, high reliability, designed for transient voltage suppression with zener voltage ranging from 5.6V to 33V depending on type. | Original | ||||
MMBZ27VA
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Shikues Semiconductor | Original |
2.7 V Price and Stock
Nexperia PESD2CANFD27V-UXTVS DIODE 27VWM 44VC SOT323 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PESD2CANFD27V-UX | Tape & Reel | 9,000 | 3,000 |
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Buy Now | |||||
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PESD2CANFD27V-UX | 570,000 | 1 |
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Buy Now | ||||||
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PESD2CANFD27V-UX | 93,000 |
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PESD2CANFD27V-UX | 4,638 |
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Panasonic Electronic Components ERJ-8BWFR027VRES 0.027 OHM 1% 1W 1206 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ERJ-8BWFR027V | Digi-Reel | 8,150 | 1 |
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Buy Now | |||||
Nexperia PESD27VV2BTRTVS DIODE 27VWM 45VC TO236AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PESD27VV2BTR | Digi-Reel | 4,858 | 1 |
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Buy Now | |||||
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PESD27VV2BTR | Cut Tape | 1,366 | 0 Weeks, 1 Days | 10 |
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Buy Now | ||||
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PESD27VV2BTR | 179,000 |
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Get Quote | |||||||
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PESD27VV2BTR | 5,300 |
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Get Quote | |||||||
Panasonic Electronic Components ERJ-6CWDR027VRES 0.027 OHM 0.5% 1/2W 0805 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ERJ-6CWDR027V | Digi-Reel | 4,014 | 1 |
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Buy Now | |||||
Taiwan Semiconductor M3Z27VC-RRGDIODE ZENER 27V 200MW SOD323F |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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M3Z27VC-RRG | Tape & Reel | 3,000 | 3,000 |
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Buy Now | |||||
2.7 V Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
AT25DF1281
Abstract: 8MW1 VDFN AT45DBxxx atmel 528 8MW1 - VDFN footprint 8M1-A 8MA1 UDFN 8MW1 8S2 EIAJ SOIC 8cn3
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28-byte AT25DF1281 8MW1 VDFN AT45DBxxx atmel 528 8MW1 - VDFN footprint 8M1-A 8MA1 UDFN 8MW1 8S2 EIAJ SOIC 8cn3 | |
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Contextual Info: FILTERS BANDPASS CENTER FREQUENCY INSERTION LOSS dB (MHz) Max PASSBAND 35 dB BANDWIDTH (MHz) 10.7 21.4 30.0 45.0 50.0 60.0 70.0 100 120 140 160 180 200 VSWR OUTLINE DRAWING PIN-OUT (See Below) MODEL (MHz) 1.7 1.7 1.7 1.7 1.7 1.7 1.7 2.7 2.7 2.7 2.7 2.7 2.7 |
OCR Scan |
FNx-10 FNx-21 FNx-30 FNx-45 FNx-50 FNx-60 FNx-70 FNx-100 FNx-120 FNx-140 | |
NEC 10F
Abstract: HV0E226NF supercapacitor 1.0F HV0E106NF
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HV0E106NF HV0E226NF HV0E506NF HV0E107NF P0862SUCA16VOL07E NEC 10F supercapacitor 1.0F | |
HV0E106NContextual Info: Super Capacitor HV Series Dimensions H L min. ͬL min. P±0.1 φ D±0.5 Negative polarity φd Anode polarity Markings 2.7V 10F SuperCapacitor HV Standard Rating Part No. HV0E106N HV0E226N HV0E506N HV0E107N Max. Rated Voltage Vdc 2.7 2.7 2.7 2.7 Nominal Capacitance |
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HV0E106N HV0E226N HV0E506N HV0E107N | |
nec 10f
Abstract: 10F NEC
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HV0E106NF HV0E226NF HV0E506NF HV0E107NF P0704SUCA16VOL04E nec 10f 10F NEC | |
HV0E506N
Abstract: HV0E106N HV0E107N HV0E226N
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HV0E106N HV0E226N HV0E506N HV0E107N HV0E506N HV0E106N HV0E107N HV0E226N | |
VCO 5GHzContextual Info: JXWBVCO-T-2.3-2.7 2.3~2.7GHz VCO Test report is for reference only. TEST REPORT for JXWBVCO-T-2.3-2.7 1 JXWBVCO-T-2.3-2.7 2.3~2.7GHz VCO Technical Specification Frequency Range GHz 2.3 – 2.7 Central Frequency(GHz) 2.5 RF Power(dBm) 10 Phase Noise(dBc/Hz) |
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10KHz -20dBc) VCO 5GHz | |
zener diode 278
Abstract: 7D10 9D10 2EZ82D1 2EZ36D10 diodes zener 2ez
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TH97/10561QM TW00/17276EM DO-41 UL94V-O MIL-STD-202, 2EZ180D10 2EZ190D10 2EZ200D10 2EZ220D10 2EZ270D10 zener diode 278 7D10 9D10 2EZ82D1 2EZ36D10 diodes zener 2ez | |
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Contextual Info: 3 7 o o □4 2.4 1.5 1.5 2.4 1.5 2.4 D NO JL 2.7 2.7 1.8 2.7 1.8 E 1.5 2.4 1.5 C 47o4 4o 1.8 1.8 2.7 1.8 2.7 B "P IT C H £. 0o 15 REF Jiiiiiiiiiiiiiniilr HOUSING: HIGH TEMPERATURE THERMOPLASTIC TERMINAL: COPPER ALLOY NAIL: COPPER ALLOY OR STAINLESS FINISH |
OCR Scan |
G7589-200I | |
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Contextual Info: IC d e p e n d e n c e uPD72153GM CCR1G. 93MX7 - 'v item IC N 0 ^ \ a. [V] V1H/V1L LL 2.7 LH 2.7 CC 2.7 HH 2.7 b. [V] 3.4 3.4 .3 3.4 .3 3.4 .3 oscillating Room Vdd Rf STD V2H/V2L .3 of c. [MHz] d. characteristics Temp. [V ] [Mohm] [uS] 3 .3 1 m e. ite m f. |
OCR Scan |
uPD72153GM 93MX7 | |
yg802c10
Abstract: YG802C10R
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YG802C10R O-22OF15) 13Min SC-67 yg802c10 YG802C10R | |
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Contextual Info: YG801C06R 60V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2 |
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YG801C06R O-22OF15) 13Min SC-67 | |
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Contextual Info: YG805C06R 60V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2 |
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YG805C06R O-22OF15) 13Min SC-67 | |
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Contextual Info: 7 3 o o 2.4 1.8 2.7 1.5 18.45 2.5V X 67625-2005 2.4 1.8 2.7 1.5 18.45 2.5V X 67625-2003 PK-67589-002 T&R 1.5 2.7 1.8 2.4 17.55 1.8V 67625-2002 PK-67589-002 (T&R) 2.4 1.8 2.7 1.5 18.45 2.5V 67625-200 PK-67589-001 (TRAY) 1.5 2.7 1.8 2.4 17.55 1.8V 67625-2000 |
OCR Scan |
PK-67589-002 PK-67589-001 S67S2501 | |
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Contextual Info: YG801C09R 90V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2 |
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YG801C09R O-22OF15) 13Min SC-67 500ns, | |
fast recovery diode 400v 5AContextual Info: YG226S4 5A (400V / 5A) Outline drawings, mm FAST RECOVERY DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 15±0.3 2.7±0.2 6.3 2.7±0.2 3 1 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design |
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YG226S4 13Min SC-67 fast recovery diode 400v 5A | |
YG226S2Contextual Info: YG226S2 5A (200V / 5A) Outline drawings, mm FAST RECOVERY DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 1 15±0.3 2.7±0.2 6.3 2.7±0.2 3 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design |
Original |
YG226S2 13Min SC-67 YG226S2 | |
power Diode 800V 5AContextual Info: YG226S8 5A (800V / 5A) Outline drawings, mm FAST RECOVERY DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 15±0.3 2.7±0.2 6.3 2.7±0.2 3 1 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design |
Original |
YG226S8 13Min SC-67 power Diode 800V 5A | |
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Contextual Info: YG801C06R 60V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2 |
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YG801C06R O-22OF15) 13Min SC-67 | |
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Contextual Info: YG835C03R 30V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2 |
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YG835C03R O-22OF15) 13Min SC-67 | |
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Contextual Info: YG835C03R 30V / 25A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2 |
Original |
YG835C03R O-22OF15) 13Min SC-67 | |
LNA-015-01-S08
Abstract: 15 GHz power amplifier power amplifier 15 GHz dB dBm
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LNA-015-01-S08 15 GHz power amplifier power amplifier 15 GHz dB dBm | |
SCHOTTKY 20A 40V
Abstract: a465
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YG805C04R O-22OF15) 13Min SC-67 SCHOTTKY 20A 40V a465 | |
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Contextual Info: YG831C03R 30V / 6A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 13Min 3.7±0.2 1.2±0.2 Features Low VF Super high speed switching. High reliability by planer design. 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2 |
Original |
YG831C03R O-22OF15) 13Min SC-67 | |