2.7 V Search Results

AT25DF1281

Abstract: 8MW1 VDFN AT45DBxxx atmel 528 8MW1 - VDFN footprint 8M1-A 8MA1 UDFN 8MW1 8S2 EIAJ SOIC 8cn3
Contextual Info: Density Vcc Min Mbits (V) DataFlash Page Erase Part Number Interface Architecture SPI SPI SPI SPI SPI SPI SPI, Rapid8 Speed (MHz) 66 66 66 66 66 66 66/50 Page-erase, Byte-alterable, 2.7 to 3.6V – Industrial Temperature Grade 2.7 2.7 2.7 2.7 2.7 2.7 2.7

Contextual Info: FILTERS BANDPASS CENTER FREQUENCY INSERTION LOSS dB (MHz) Max PASSBAND 35 dB BANDWIDTH (MHz) 10.7 21.4 30.0 45.0 50.0 60.0 70.0 100 120 140 160 180 200 VSWR OUTLINE DRAWING PIN-OUT (See Below) MODEL (MHz) 1.7 1.7 1.7 1.7 1.7 1.7 1.7 2.7 2.7 2.7 2.7 2.7 2.7

NEC 10F

Abstract: HV0E226NF supercapacitor 1.0F HV0E106NF
Contextual Info: Super Capacitor HV Series Dimensions H Markings ͬL min. L min. 2.7V 10F SuperCapacitor P±0.1 φ D±0.5 Negative polarity HV φd Anode polarity Standard Rating Part No. HV0E106NF HV0E226NF HV0E506NF HV0E107NF Max. Operating Voltage Vdc 2.7 2.7 2.7 2.7 Nominal

HV0E106N

Contextual Info: Super Capacitor HV Series Dimensions H L min. ͬL min. P±0.1 φ D±0.5 Negative polarity φd Anode polarity Markings 2.7V 10F SuperCapacitor HV Standard Rating Part No. HV0E106N HV0E226N HV0E506N HV0E107N Max. Rated Voltage Vdc 2.7 2.7 2.7 2.7 Nominal Capacitance

nec 10f

Abstract: 10F NEC
Contextual Info: Super Capacitor HV Series Dimensions H Markings ͬL min. L min. 2.7V 10F SuperCapacitor P±0.1 φ D±0.5 Negative polarity HV φd Anode polarity Standard Rating Part No. HV0E106NF HV0E226NF HV0E506NF HV0E107NF Max. Rated Voltage Vdc 2.7 2.7 2.7 2.7 Nominal

HV0E506N

Abstract: HV0E106N HV0E107N HV0E226N
Contextual Info: Super Capacitor HV Series Dimensions H L min. ͬL min. P±0.1 φ D±0.5 Negative polarity φd Anode polarity Markings 2.7V 10F SuperCapacitor HV Standard Rating Part No. HV0E106N HV0E226N HV0E506N HV0E107N Max. Rated Voltage Vdc 2.7 2.7 2.7 2.7 Nominal Capacitance

VCO 5GHz

Contextual Info: JXWBVCO-T-2.3-2.7 2.3~2.7GHz VCO Test report is for reference only. TEST REPORT for JXWBVCO-T-2.3-2.7 1 JXWBVCO-T-2.3-2.7 2.3~2.7GHz VCO Technical Specification Frequency Range GHz 2.3 – 2.7 Central Frequency(GHz) 2.5 RF Power(dBm) 10 Phase Noise(dBc/Hz)

zener diode 278

Abstract: 7D10 9D10 2EZ82D1 2EZ36D10 diodes zener 2ez
Contextual Info: Certificate TH97/10561QM 2EZ Series Certificate TW00/17276EM SILICON ZENER DIODES DO - 41 VZ : 2.7 - 330 Volts PD : 2 Watts 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) FEATURES : * Complete Voltage Range 2.7 to 330 Volts * High peak reverse power dissipation

Contextual Info: 3 7 o o □4 2.4 1.5 1.5 2.4 1.5 2.4 D NO JL 2.7 2.7 1.8 2.7 1.8 E 1.5 2.4 1.5 C 47o4 4o 1.8 1.8 2.7 1.8 2.7 B "P IT C H £. 0o 15 REF Jiiiiiiiiiiiiiniilr HOUSING: HIGH TEMPERATURE THERMOPLASTIC TERMINAL: COPPER ALLOY NAIL: COPPER ALLOY OR STAINLESS FINISH

Contextual Info: IC d e p e n d e n c e uPD72153GM CCR1G. 93MX7 - 'v item IC N 0 ^ \ a. [V] V1H/V1L LL 2.7 LH 2.7 CC 2.7 HH 2.7 b. [V] 3.4 3.4 .3 3.4 .3 3.4 .3 oscillating Room Vdd Rf STD V2H/V2L .3 of c. [MHz] d. characteristics Temp. [V ] [Mohm] [uS] 3 .3 1 m e. ite m f.

yg802c10

Abstract: YG802C10R
Contextual Info: YG802C10R 100V / 10A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2

Contextual Info: YG801C06R 60V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2

Contextual Info: YG805C06R 60V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2

Contextual Info: 7 3 o o 2.4 1.8 2.7 1.5 18.45 2.5V X 67625-2005 2.4 1.8 2.7 1.5 18.45 2.5V X 67625-2003 PK-67589-002 T&R 1.5 2.7 1.8 2.4 17.55 1.8V 67625-2002 PK-67589-002 (T&R) 2.4 1.8 2.7 1.5 18.45 2.5V 67625-200 PK-67589-001 (TRAY) 1.5 2.7 1.8 2.4 17.55 1.8V 67625-2000

Contextual Info: YG801C09R 90V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2

fast recovery diode 400v 5A

Contextual Info: YG226S4 5A (400V / 5A) Outline drawings, mm FAST RECOVERY DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 15±0.3 2.7±0.2 6.3 2.7±0.2 3 1 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design

YG226S2

Contextual Info: YG226S2 5A (200V / 5A) Outline drawings, mm FAST RECOVERY DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 1 15±0.3 2.7±0.2 6.3 2.7±0.2 3 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design

power Diode 800V 5A

Contextual Info: YG226S8 5A (800V / 5A) Outline drawings, mm FAST RECOVERY DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 15±0.3 2.7±0.2 6.3 2.7±0.2 3 1 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design

Contextual Info: YG801C06R 60V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2

Contextual Info: YG835C03R 30V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2

Contextual Info: YG835C03R 30V / 25A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2

LNA-015-01-S08

Abstract: 15 GHz power amplifier power amplifier 15 GHz dB dBm
Contextual Info: Low Noise Amplifier 1.5/2.7 GHz LNA-015-01-S08 PRELIMINARY ELECTRICAL SPECIFICATION Frequency: 1.5 - 2.7 GHz Gain @ 1.5 GHz: 16.0 dB Gain @ 2.7 GHz: 12.0 dB Noise Figure NF NF @ 1.5 GHz: 0.85 dB NF @ 2.7 GHz: 0.65 dB P1dB @ 2.0 GHz 10.0 dBm Return Loss Input/Output

SCHOTTKY 20A 40V

Abstract: a465
Contextual Info: YG805C04R 40V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2

Contextual Info: YG831C03R 30V / 6A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 13Min 3.7±0.2 1.2±0.2 Features Low VF Super high speed switching. High reliability by planer design. 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2