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    2.5-V DEVICES Search Results

    2.5-V DEVICES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    EP1800ILC-70
    Rochester Electronics LLC EP1800 - Classic Family EPLD PDF Buy
    EP1800GM-75/B
    Rochester Electronics LLC EP1800 - Classic Family EPLD PDF Buy
    BLM15PX330BH1D
    Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN PDF
    BLM15PX600SH1D
    Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN PDF
    BLM21HE601SN1L
    Murata Manufacturing Co Ltd FB SMD 0805inch 600ohm NONAUTO PDF

    2.5-V DEVICES Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2.5-V Devices
    Altera Designing with 2.5-V Devices Application Note 106 Original PDF 276.94KB 24

    2.5-V DEVICES Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    O16N

    Abstract: I22P I29N O09P O26P O27P O16P O25P O31P I28P
    Contextual Info: a 34 ؋ 34, 3.2 Gbps Asynchronous Digital Crosspoint Switch AD8152 FEATURES Low Cost Low Power 2.0 W @ 2.5 V Outputs Enabled <100 mW @ 2.5 V (Outputs Disabled) 34 ؋ 34, Fully Differential, Nonblocking Array 3.2 Gbps per Port NRZ Data Rate Wide Power Supply Range: 2.5 V to 3.3 V


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    AD8152 256-Ball OC-48 MO-192-BAL-2 1/03--Data C02984 O16N I22P I29N O09P O26P O27P O16P O25P O31P I28P PDF

    2N398A

    Abstract: Germanium Transistors 2N396 2N965
    Contextual Info: GERMANIUM PNP MESA TRANSISTORS VcBO f^Emo Max V Max 2N828A 2N829 2N808 2N960 2N961 15 15 30 15 12 2.5 2.5 2.5 2.5 2.0 2N962 2N962 2N963 2N964 2N964 12 12 12 15 15 1.2 1.3 2.0 2.5 2.5 2N964A 2N965 2N966 2N967 2N968 15 12 12 12 15 2.5 2.0 1.2 2.0 2.5 2N969 2N970


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    2N828A 2N829 2N808 2N960 2N961 2N962 2N963 2N964 2N398A Germanium Transistors 2N396 2N965 PDF

    Contextual Info: SN54ALVTH16652, SN74ALVTH16652 2.5-V/3.3-V 16-BIT BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS SCES192 - FEBRUARY 1999 State-of-the-Art Advanced BiCMOS Technology ABT Widebus Design for 2.5-V and 3.3-V Operation and Low Static-Power Dissipation


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    SN54ALVTH16652, SN74ALVTH16652 16-BIT SCES192 PDF

    ADCMP600BRJZ-R2

    Abstract: ADCMP600 ADCMP601 ADCMP602 MAX999 jedec MO-203 AA
    Contextual Info: Rail-to-Rail, Very Fast, 2.5 V to 5.5 V, Single-Supply TTL/CMOS Comparators ADCMP600/ADCMP601/ADCMP602 Fully specified rail to rail at VCC = 2.5 V to 5.5 V Input common-mode voltage from −0.2 V to VCC + 0.2 V Low glitch CMOS-/TTL-compatible output stage


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    ADCMP600/ADCMP601/ADCMP602 MAX999 ADCMP600/ ADCMP601/ ADCMP602 ADCMP600) ADCMP602 D05914-0-1/11 ADCMP600BRJZ-R2 ADCMP600 ADCMP601 MAX999 jedec MO-203 AA PDF

    ADCMP601

    Abstract: ADCMP603
    Contextual Info: Rail-to-Rail, Very Fast, 2.5 V to 5.5 V, Single-Supply TTL/CMOS Comparator ADCMP603 Fully specified rail to rail at VCC = 2.5 V to 5.5 V Input common-mode voltage from −0.2 V to VCC + 0.2 V Low glitch CMOS-/TTL-compatible output stage Complementary outputs


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    ADCMP603 CP-12-1) ADCMP603BCPZ-WP1 ADCMP603BCPZ-R21 ADCMP603BCPZ-R71 12-Lead CP-12-1 ADCMP601 ADCMP603 PDF

    74668

    Contextual Info: Si8441DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)e 0.080 at VGS = - 4.5 V - 10.5 0.102 at VGS = - 2.5 V - 9.3 0.128 at VGS = - 1.8 V - 3.5 0.198 at VGS = - 1.5 V - 2.5 0.600 at VGS = - 1.2 V - 0.5 VDS (V) - 20


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    Si8441DB Si8441DB-T2-E1 08-Apr-05 74668 PDF

    Si1303DL-T1-gE3

    Abstract: sc70-3 PCB PAD SI1303D SOT-323 31 MOSFET sc-70 package pcb layout F MARKING 6PIN
    Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition


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    Si1303DL 2002/95/EC OT-323 SC-70 Si1303DL-T1-E3 Si1303DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. sc70-3 PCB PAD SI1303D SOT-323 31 MOSFET sc-70 package pcb layout F MARKING 6PIN PDF

    71079

    Abstract: s101-05
    Contextual Info: Si1555DL Vishay Siliconix Complementary Low-Threshold MOSFET Pair FEATURES PRODUCT SUMMARY VDS V N-Channel 20 P-Channel -8 RDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 0.600 at VGS = - 4.5 V - 0.60 0.850 at VGS = - 2.5 V - 0.50


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    Si1555DL 2002/95/EC OT-363 SC-70 Si1555DL-T1-E3 Si1555DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 71079 s101-05 PDF

    STP4NB50FP

    Abstract: STP4NB50
    Contextual Info: STP4NB50 STP4NB50FP N-CHANNEL 500V - 2.5Ω - 3.8A - TO-220/TO-220FP PowerMesh MOSFET PRELIMINARY DATA TYPE STP4NB50 STP4NB50FP • ■ ■ ■ ■ VDSS RDS on ID 500 V 500 V < 2.8 Ω < 2.8 Ω 3.8 A 2.5 A TYPICAL RDS(on) = 2.5 Ω EXTREMELY HIGH dv/dt CAPABILITY


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    STP4NB50 STP4NB50FP O-220/TO-220FP STP4NB50FP STP4NB50 PDF

    Contextual Info: SN54ALVTH16374, SN74ALVTH16374 2.5-V/3.3-V 16-BIT EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS SCES068F - JUNE 1996 - REVISED JANUARY 1999 • State-of-the-Art Advanced BiCMOS Technology ABT Widebus Design for 2.5-V and 3.3-V Operation and Low Static


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    SN54ALVTH16374, SN74ALVTH16374 16-BIT SCES068F PDF

    SIA513

    Contextual Info: New Product SiA513DJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel RDS(on) (Ω) Qg (Typ.) a 0.060 at VGS = 4.5 V 4.5 0.092 at VGS = 2.5 V 4.5a 0.110 at VGS = - 4.5 V - 4.5a 0.185 at VGS = - 2.5 V - 4.5a


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    SiA513DJ SC-70 SC-70-6 SiA513DJ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIA513 PDF

    PAD106

    Contextual Info: a 2.5 ⍀, 1.8 V to 5.5 V, ؎2.5 V Triple/Quad SPDT Switches in Chip Scale Packages ADG786/ADG788 FEATURES 1.8 V to 5.5 V Single Supply ±2.5 V Dual Supply 2.5 ȍ On Resistance 0.5 ȍ On Resistance Flatness 100 pA Leakage Currents 19 ns Switching Times Triple SPDT: ADG786


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    ADG786/ADG788 ADG786 ADG788 20-Lead 16-Lead ADG733/ADG734 ADG786 8/12--Rev. 7/01--Revision D02381-0-8/12 PAD106 PDF

    si4838

    Contextual Info: Si4838DY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 25 0.004 at VGS = 2.5 V 20 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated


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    Si4838DY Si4838DY-T1-E3 Si4838DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4838 PDF

    Contextual Info: SN54ALVTH32373, SN74ALVTH32373 2.5-V/3.3-V 32-BIT TRANSPARENT D-TYPE LATCHES WITH 3-STATE OUTPUTS SCES322 – FEBRUARY 2000 D D D D D D State-of-the-Art Advanced BiCMOS Technology ABT Widebus  Design for 2.5-V and 3.3-V Operation and Low Static-Power Dissipation


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    SN54ALVTH32373, SN74ALVTH32373 32-BIT SCES322 PDF

    1206-8 chipfet

    Abstract: Vishay DaTE CODE 1206-8 si5903dc si5903dc-t1-e3
    Contextual Info: Si5903DC Vishay Siliconix Dual P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.155 at VGS = - 4.5 V ± 2.9 - 20 0.180 at VGS = - 3.6 V ± 2.7 0.260 at VGS = - 2.5 V ± 2.2 • Halogen-free According to IEC 61249-2-21 Definition


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    Si5903DC 2002/95/EC Si5903DC-T1-E3 Si5903DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 1206-8 chipfet Vishay DaTE CODE 1206-8 PDF

    Contextual Info: Si3434DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 6.1 0.050 at VGS = 2.5 V 5.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 2.5 V Rating for 30 V N-Channel


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    Si3434DV 2002/95/EC Si3434DV-T1-E3 Si3434DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    A115-A

    Abstract: C101 SN54ALVTH32373 SN74ALVTH32373
    Contextual Info: SN54ALVTH32373, SN74ALVTH32373 2.5-V/3.3-V 32-BIT TRANSPARENT D-TYPE LATCHES WITH 3-STATE OUTPUTS SCES322A – FEBRUARY 2000 – REVISED APRIL 2000 D D D D D D State-of-the-Art Advanced BiCMOS Technology ABT Widebus+  Design for 2.5-V and 3.3-V Operation and Low


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    SN54ALVTH32373, SN74ALVTH32373 32-BIT SCES322A A115-A C101 SN54ALVTH32373 SN74ALVTH32373 PDF

    marking code g1

    Abstract: mil 43
    Contextual Info: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V


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    Si5515CDC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking code g1 mil 43 PDF

    SIA456DJ

    Contextual Info: New Product SiA456DJ Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 1.38 at VGS = 4.5 V 2.6 1.50 at VGS = 2.5 V 2.5 3.50 at VGS = 1.8 V 0.5 VDS (V) 200 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


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    SiA456DJ SC-70 SC-70-6L-Single SiA456DJ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    AD7720

    Contextual Info: a FEATURES 12.5 M Hz M aster Clock Frequency 0 V to +2.5 V or ؎1.25 V Input Range Single Bit Output Stream 90 dB Dynamic Range Pow er Supplies: AVDD, DVDD: +5 V ؎ 5% On-Chip 2.5 V Voltage Reference 28-Lead TSSOP CMOS Sigma-Delta Modulator AD7720 FU NCTIONAL B LOCK D IAGRAM


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    28-Lead AD7720 C3235â AD7720 PDF

    SI6925AD

    Abstract: pc based electronic notice board SI6925ADQ
    Contextual Info: Si6925ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.045 at VGS = 4.5 V 3.9 0.055 at VGS = 3.0 V 3.5 0.065 at VGS = 2.5 V 3.0 • Halogen-free RoHS COMPLIANT D2 D1 TSSOP-8 D1 1 S1 2 S1 3 G1


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    Si6925ADQ Si6925ADQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI6925AD pc based electronic notice board PDF

    Contextual Info: SSM3K15AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS III SSM3K15AFU Load Switching Applications Unit: mm • 2.5 V drive • Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C)


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    SSM3K15AFU PDF

    FDJ1028N

    Abstract: SC75
    Contextual Info: FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench MOSFET Features Applications • 3.2 A, 20 V. RDS ON = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V ■ Battery management General Description ■ Low gate charge ■ High performance trench technology for extremely low


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    FDJ1028N FDJ1028N SC75 PDF

    GS864418

    Abstract: GS864418B GS864418B-250 GS864472
    Contextual Info: Product Preview GS864418 B/E /GS864436(B/E)/GS864472(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Flow Through/Pipeline Reads


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    GS864418 /GS864436 /GS864472 209-Pin 133MHz 8644xx GS864418B GS864418B-250 GS864472 PDF