2.5-V DEVICES Search Results

O16N

Abstract: I22P I29N O09P O26P O27P O16P O25P O31P I28P
Contextual Info: a 34 ؋ 34, 3.2 Gbps Asynchronous Digital Crosspoint Switch AD8152 FEATURES Low Cost Low Power 2.0 W @ 2.5 V Outputs Enabled <100 mW @ 2.5 V (Outputs Disabled) 34 ؋ 34, Fully Differential, Nonblocking Array 3.2 Gbps per Port NRZ Data Rate Wide Power Supply Range: 2.5 V to 3.3 V

2N398A

Abstract: Germanium Transistors 2N396 2N965
Contextual Info: GERMANIUM PNP MESA TRANSISTORS VcBO f^Emo Max V Max 2N828A 2N829 2N808 2N960 2N961 15 15 30 15 12 2.5 2.5 2.5 2.5 2.0 2N962 2N962 2N963 2N964 2N964 12 12 12 15 15 1.2 1.3 2.0 2.5 2.5 2N964A 2N965 2N966 2N967 2N968 15 12 12 12 15 2.5 2.0 1.2 2.0 2.5 2N969 2N970

Contextual Info: SN54ALVTH16652, SN74ALVTH16652 2.5-V/3.3-V 16-BIT BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS SCES192 - FEBRUARY 1999 State-of-the-Art Advanced BiCMOS Technology ABT Widebus Design for 2.5-V and 3.3-V Operation and Low Static-Power Dissipation

ADCMP600BRJZ-R2

Abstract: ADCMP600 ADCMP601 ADCMP602 MAX999 jedec MO-203 AA
Contextual Info: Rail-to-Rail, Very Fast, 2.5 V to 5.5 V, Single-Supply TTL/CMOS Comparators ADCMP600/ADCMP601/ADCMP602 Fully specified rail to rail at VCC = 2.5 V to 5.5 V Input common-mode voltage from −0.2 V to VCC + 0.2 V Low glitch CMOS-/TTL-compatible output stage

ADCMP601

Abstract: ADCMP603
Contextual Info: Rail-to-Rail, Very Fast, 2.5 V to 5.5 V, Single-Supply TTL/CMOS Comparator ADCMP603 Fully specified rail to rail at VCC = 2.5 V to 5.5 V Input common-mode voltage from −0.2 V to VCC + 0.2 V Low glitch CMOS-/TTL-compatible output stage Complementary outputs

74668

Contextual Info: Si8441DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)e 0.080 at VGS = - 4.5 V - 10.5 0.102 at VGS = - 2.5 V - 9.3 0.128 at VGS = - 1.8 V - 3.5 0.198 at VGS = - 1.5 V - 2.5 0.600 at VGS = - 1.2 V - 0.5 VDS (V) - 20

Si1303DL-T1-gE3

Abstract: sc70-3 PCB PAD SI1303D SOT-323 31 MOSFET sc-70 package pcb layout F MARKING 6PIN
Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition

71079

Abstract: s101-05
Contextual Info: Si1555DL Vishay Siliconix Complementary Low-Threshold MOSFET Pair FEATURES PRODUCT SUMMARY VDS V N-Channel 20 P-Channel -8 RDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 0.600 at VGS = - 4.5 V - 0.60 0.850 at VGS = - 2.5 V - 0.50

STP4NB50FP

Abstract: STP4NB50
Contextual Info: STP4NB50 STP4NB50FP N-CHANNEL 500V - 2.5Ω - 3.8A - TO-220/TO-220FP PowerMesh MOSFET PRELIMINARY DATA TYPE STP4NB50 STP4NB50FP • ■ ■ ■ ■ VDSS RDS on ID 500 V 500 V < 2.8 Ω < 2.8 Ω 3.8 A 2.5 A TYPICAL RDS(on) = 2.5 Ω EXTREMELY HIGH dv/dt CAPABILITY

Contextual Info: SN54ALVTH16374, SN74ALVTH16374 2.5-V/3.3-V 16-BIT EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS SCES068F - JUNE 1996 - REVISED JANUARY 1999 • State-of-the-Art Advanced BiCMOS Technology ABT Widebus Design for 2.5-V and 3.3-V Operation and Low Static

SIA513

Contextual Info: New Product SiA513DJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel RDS(on) (Ω) Qg (Typ.) a 0.060 at VGS = 4.5 V 4.5 0.092 at VGS = 2.5 V 4.5a 0.110 at VGS = - 4.5 V - 4.5a 0.185 at VGS = - 2.5 V - 4.5a

PAD106

Contextual Info: a 2.5 ⍀, 1.8 V to 5.5 V, ؎2.5 V Triple/Quad SPDT Switches in Chip Scale Packages ADG786/ADG788 FEATURES 1.8 V to 5.5 V Single Supply ±2.5 V Dual Supply 2.5 ȍ On Resistance 0.5 ȍ On Resistance Flatness 100 pA Leakage Currents 19 ns Switching Times Triple SPDT: ADG786

si4838

Contextual Info: Si4838DY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 25 0.004 at VGS = 2.5 V 20 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated

Contextual Info: SN54ALVTH32373, SN74ALVTH32373 2.5-V/3.3-V 32-BIT TRANSPARENT D-TYPE LATCHES WITH 3-STATE OUTPUTS SCES322 – FEBRUARY 2000 D D D D D D State-of-the-Art Advanced BiCMOS Technology ABT Widebus  Design for 2.5-V and 3.3-V Operation and Low Static-Power Dissipation

1206-8 chipfet

Abstract: Vishay DaTE CODE 1206-8 si5903dc si5903dc-t1-e3
Contextual Info: Si5903DC Vishay Siliconix Dual P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.155 at VGS = - 4.5 V ± 2.9 - 20 0.180 at VGS = - 3.6 V ± 2.7 0.260 at VGS = - 2.5 V ± 2.2 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si3434DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 6.1 0.050 at VGS = 2.5 V 5.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 2.5 V Rating for 30 V N-Channel

A115-A

Abstract: C101 SN54ALVTH32373 SN74ALVTH32373
Contextual Info: SN54ALVTH32373, SN74ALVTH32373 2.5-V/3.3-V 32-BIT TRANSPARENT D-TYPE LATCHES WITH 3-STATE OUTPUTS SCES322A – FEBRUARY 2000 – REVISED APRIL 2000 D D D D D D State-of-the-Art Advanced BiCMOS Technology ABT Widebus+  Design for 2.5-V and 3.3-V Operation and Low

marking code g1

Abstract: mil 43
Contextual Info: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V

SIA456DJ

Contextual Info: New Product SiA456DJ Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 1.38 at VGS = 4.5 V 2.6 1.50 at VGS = 2.5 V 2.5 3.50 at VGS = 1.8 V 0.5 VDS (V) 200 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

AD7720

Contextual Info: a FEATURES 12.5 M Hz M aster Clock Frequency 0 V to +2.5 V or ؎1.25 V Input Range Single Bit Output Stream 90 dB Dynamic Range Pow er Supplies: AVDD, DVDD: +5 V ؎ 5% On-Chip 2.5 V Voltage Reference 28-Lead TSSOP CMOS Sigma-Delta Modulator AD7720 FU NCTIONAL B LOCK D IAGRAM

SI6925AD

Abstract: pc based electronic notice board SI6925ADQ
Contextual Info: Si6925ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.045 at VGS = 4.5 V 3.9 0.055 at VGS = 3.0 V 3.5 0.065 at VGS = 2.5 V 3.0 • Halogen-free RoHS COMPLIANT D2 D1 TSSOP-8 D1 1 S1 2 S1 3 G1

Contextual Info: SSM3K15AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS III SSM3K15AFU Load Switching Applications Unit: mm • 2.5 V drive • Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C)

FDJ1028N

Abstract: SC75
Contextual Info: FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench MOSFET Features Applications • 3.2 A, 20 V. RDS ON = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V ■ Battery management General Description ■ Low gate charge ■ High performance trench technology for extremely low

GS864418

Abstract: GS864418B GS864418B-250 GS864472
Contextual Info: Product Preview GS864418 B/E /GS864436(B/E)/GS864472(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Flow Through/Pipeline Reads